Abstract
Studies of the infrared transmission properties of single crystal silicon implanted with high fluences of carbon, nitrogen or oxygen ions and annealed to temperatures ⩽ 1000 °C, indicate that SiC, S3N4 or SiO2 micro regions, respectively, are formed. These compounds were identified by their characteristic phonon absorption bands. SiC is observed to form after annealing at 850°C for 20 minutes, but the formation of Si3N4 andSiO2 requires a temperature of 1000°C for about 15 hours. Immediately after implantation, and at annealing temperatures lower than that required for compound formation, broad featureless absorption bands are observed, whose positions and annealing behaviors are dependent on the implanted ions.
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References
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Borders, J.A., Beezhold, W. (1971). Infrared Studies of SiC, Si3N4, and SiO2 Formation in Ion-Implanted Silicon. In: Ruge, I., Graul, J. (eds) Ion Implantation in Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80660-5_33
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DOI: https://doi.org/10.1007/978-3-642-80660-5_33
Publisher Name: Springer, Berlin, Heidelberg
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