The Evaluation of Electrically Active Damage in Hot, Phosphorus Implantations in Silicon by Means of Hall-Effect Measurements

Abstract

Results of Hall-effect measurements as a function of temperature on layers formed by hot, phosphorus (P³¹) implants in Si at 400-keV energy are presented; channeled implantations are considered and doses used ranged from 10¹³ cm^-2 to 10¹⁵ cm^-2. A detailed analysis of the measured quantities n_{s eff}(T), the effective surface density of free carriers, and µ_eff(T), the effective mobility, is presented, the integral equations for these quantities being solved as discussed previously [1]. Within the framework established by our assumptions, the analysis provides information on the amount and distribution of compensating damage produced as a result of the implantation. Results from high-dose, hot, channeled implants indicate a reversal of sign of the Hall coefficient (R_{H eff}) at low measuring temperatures and at relatively low annealing temperatures.