Abstract
Investigations have been made on crystal damages in silicon produced by 100 and 150 keV B+, P+, and Ne+ ion implantations. Their effects on electrical properties of the implanted layers have also been studied as a function of implantation and subsequent annealing conditions
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© 1971 Springer-Verlag, Berlin · Heidelberg
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Tamura, M., Ikeda, T., Tokuyama, T. (1971). Crystal Defects and Electrical Properties in Ion-Implanted Silicon. In: Ruge, I., Graul, J. (eds) Ion Implantation in Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-80660-5_14
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DOI: https://doi.org/10.1007/978-3-642-80660-5_14
Publisher Name: Springer, Berlin, Heidelberg
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