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Perspectives on Formation and Properties of Semiconductor Interfaces

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Semiconductor Interfaces

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 22))

Abstract

Recent progress in experimentally and theoretically understanding interfaces at the atomic level suggest that ultimate electronic systems may one day be fabricated on a single integrated chip. If such elements as Si VLSI processors, GaAs/AIAs integrated optoelectronic 10 devices, II-VI superlattice visible displays and high speed III-V processors are to be integrated, interface formation and in situ processing will be required at a level of sophistication well beyond what is available today. In this paper, we review recent developments in interface formation by both MOCVD and MBE. To illustrate the power of our diagnostic methods, the details of epitaxial interface formation on an atomic scale are reviewed for lattice matched systems (Ge/GaAs/AIAs) and epitaxial silicides (Ni/Si2/Si) as well as oxidation of silicon to form Si/SiO2 interfaces. New developments in using lattice mismatched superlattices with strained layers are discussed for CdTe/ZnTe. Additional complications of growing compound semiconductors on elemental substrates (e.g., anti-phase domains) are discussed for GaAs growth on Si(l00).

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References

  1. R. D. Burnham, W. Streifer, T. L. Paoli, and N. Holonyak, Jr., J. Crystal Growth 68, 370 (1984).

    Article  ADS  Google Scholar 

  2. Y. Takahashi, T. Soga, S. Sakai, M. Umeno, and S. Hattori, Jpn. J. Appi. Phys. 23,709(1984).

    Article  ADS  Google Scholar 

  3. J. M. Brown, N. Holonyak, M. J. Ludowise, W. T. Deitze, and C. R. Lewis, Electron. Lett. 20, 204(1984).

    Article  ADS  Google Scholar 

  4. R. D. Burnham, D. R. Scifres and W. Streifer, Appi. Phys. Lett. 40, 118 (1982).

    Article  ADS  Google Scholar 

  5. D. R. Scifres, R. D. Burnham, M. Bernstein, H. Chung, F. Endicott, W. Mosby, J. Tramontana, J. Walker and R. D. Yingling, Appi Phys. Lett. 41, 501 (1982).

    Article  ADS  Google Scholar 

  6. A. R. Bonnefoi, T. C. McGill and R. D. Burnham, Appi. Phys. Lett. 47, 307 (1985).

    Article  ADS  Google Scholar 

  7. Caltech 430 MBE system by Perkin-Elmer/Physical Electronics.

    Google Scholar 

  8. R. S. Bauer and G. Margaritondo, Physics Today 40, Number 1,26 (January, 1987).

    Google Scholar 

  9. K. Ploog, these proceedings, (1987).

    Google Scholar 

  10. R. S. Bauer and H. W. Sang, Jr., Surf. Sci. 132, 479 (1983).

    Article  ADS  Google Scholar 

  11. R. S. Bauer and J. C. McMenamin, J. Vac. Sci. Techol. 15,1444 (1978).

    Article  ADS  Google Scholar 

  12. A. D. Katnani, P. Chiaradia, H. W. Sang, Jr., P. Zurcher, and R. S. Bauer, Phys. Rev. B31, 2146(1985).

    ADS  Google Scholar 

  13. R. S. Bauer, Thin Solid Films, 89,419 (1982).

    Article  ADS  Google Scholar 

  14. R. S. Bauer and T. C. McGill, in: VSU Electronics Microstructure Science, Eds., N. G. Einspruch and R. S. Bauer, 10, “Interfaces and Devices,” Chapt. 1, page 3 (1985).

    Google Scholar 

  15. F. J. Grunthaner and P. J. Grunthaner, Materials Science Reports, 1, 65 (1986).

    Article  Google Scholar 

  16. R. S. Bauer, SPIE Conf. Proc. 452,160 (1984).

    Google Scholar 

  17. A. D. Katnani and R. S. Bauer, Phys. Rev. B33,1106 (1986).

    ADS  Google Scholar 

  18. R. S. Bauer and J. C. Mikelsen, Jr., J. Vac. Sci. Technol. 21,491 (1982).

    Article  ADS  Google Scholar 

  19. F. Stucki, G. J. Lapeyre, R. S. Bauer, P. Zurcher and J. C. Mikkelsen, Jr. J. Vac. Sci. Technol. B1, 865 (1983).

    Google Scholar 

  20. R. D. Bringans, R. I. G. Uhrberg and R. Z. Bachrach, Phys. Rev. Lett. 55, 533 (1985).

    Article  ADS  Google Scholar 

  21. R. D. Bringans, R. I. G. Uhrberg, M. A. Olmstead, R. Z. Bachrach and J. E. Northrup, Physica Scripta 35 (1987).

    Google Scholar 

  22. C. M. Hanson and H. H. Wieder, J. Vac. Sci. Technol. B5,971 (1987).

    Article  Google Scholar 

  23. R.T. Tung, J. M. Gibson, and J. M. Poate, Phys. Rev. Lett. 50, 429 (1983).

    Article  ADS  Google Scholar 

  24. M. Liehr, P. E. Schmid, F. K. LeGoues, and P. S. Ho, Phys. Rev. Lett. 54, 2139 (1985).

    Article  ADS  Google Scholar 

  25. R. J. Hauenstein, T. E. Schlesinger, T. C. McGill, B. D. Hunt, and L. J. Schowalter, J. Vac. Sci. Technol. A4, 860 (1986).

    Article  ADS  Google Scholar 

  26. R. H. Miles, G. Y. Wu, M. B. Johnson, T. C. McGill, J. P. Faurie, and S. Sivananthan, Appl. Phys. Lett. 48, 1383 (1986).

    Article  ADS  Google Scholar 

  27. R. H. Miles, T. C. McGill, S Sivananthan, X. Chu, and J. P. Faurie, J. Vac. Sci. Technol. B5,1263 (1987).

    Google Scholar 

  28. J. H. Van der Merwe, J. Appl. Phys. 34,123 (1963).

    Article  ADS  Google Scholar 

  29. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).

    ADS  Google Scholar 

  30. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 29, 273 (1975).

    Article  ADS  Google Scholar 

  31. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 32, 265 (1976).

    Article  ADS  Google Scholar 

  32. R. People and J. C. Bean, Appl. Phys. Lett. 47, 322 (1985).

    Article  ADS  Google Scholar 

  33. S. L. Wright, M. Inada, and H. Kroemer, J. Vac. Sci. Technol. 21, 534 (1982).

    Article  ADS  Google Scholar 

  34. D. E. Aspnes and J. Ihm, Phys. Rev. Lett. 57, 3054 (1986).

    Article  ADS  Google Scholar 

  35. J. Vac. Sci. Technol. B5, 939 (1987).

    Google Scholar 

  36. W. Monch, “On The Present Understanding of Schottky Contacts” in: Festkörperprobleme XXVI, (1986).

    Google Scholar 

  37. J. Tersoff and W. A. Harrison, J. Vac. Sci. Technol. B5,1221 (1987).

    Google Scholar 

  38. R. S. Bauer, Ed., “Proceedings of the 14th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces,” J. Vac. Sci. Technol. B5,922–1311 (1987).

    Google Scholar 

  39. J. M. Woodall, J. Freeouf, G. D. Pettit; T. Jackson, and P. Kirchner, J. Vac. Sci. Technol. 19, 626(1981).

    Article  ADS  Google Scholar 

  40. C. F. Brucker and L. J. Brillson, Appl Phys. Lett. 39,67 (1981).

    Article  ADS  Google Scholar 

  41. P. Chiaradia, A. Katnani, H. W. Sang, Jr., and R. S. Bauer, Phys. Rev. Lett. 52, 1246 (1984).

    Article  ADS  Google Scholar 

  42. A. D. Katnani, P. Chiaradia, Y. Cho, P. Mahowald, P. Pianetta, and R. S. Bauer, Phys. Rev. B32,4071 (1985).

    ADS  Google Scholar 

  43. J. R. Waldrop, R. W. Grant, and E. A. Kraut, J. Vac. Sci. Technol. B5,1209 (1987).

    Google Scholar 

  44. A. D. Katnani and R. S. Bauer, Phys. Rev. B33,1106 (1986).

    ADS  Google Scholar 

  45. F. Capasso, Surf. Sci. 132, 527 (1983).

    Article  ADS  Google Scholar 

  46. H. Kroemer, in: VSLI Electronics Microstructure Science, 10, Eds. N. G. Einspruch and R. S. Bauer, Chapter4,121 (1985).

    Google Scholar 

  47. A. D. Katnani and G. Margaritondo, Phys. Rev. B28,1944 (1983).

    ADS  Google Scholar 

  48. N. Holonyak, Jr., R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus, IEEE J. Quantum Elect. QE-16,170(1986).

    ADS  Google Scholar 

  49. W. Streifer, A. Hardy, D. R. Scifres, and R. D. Burnham, IEEE J. Quantum Electron. QE-19,991 (1983).

    Article  ADS  Google Scholar 

  50. R. D. Burnham, W. Streifer, T. L. Paoli, and N. Holonyak, Jr., J. Crystal Growth 68, 370 (1984).

    Article  ADS  Google Scholar 

  51. W. D. Laidig, N. Holonyak, Jr., M. D. Camras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, Appl. Phys. Lett. 38, pp. 776–8 (1981).

    Article  ADS  Google Scholar 

  52. N. Holonyak, Jr., W. D. Laidig, M. D. Camras, J. J. Coleman, and P. D. Dapkus, Appl. Phys. Lett. 39, pp. 102–4 (1981).

    Article  ADS  Google Scholar 

  53. R. L. Thornton, R. D. Burnham, N. Holonyak, Jr., J. E. Epler, and T. L. Paoli, SPIE Conference Proceedings, 797 (1987).

    Google Scholar 

  54. J. A. Van Vechten, J. Vac. Sci. Technol. B2, 569 (1984).

    Google Scholar 

  55. J. C. Bean, “Silicon Based Semiconductor Heterostructures” in: Silicon Molecular Beam Epitaxy, Chapter 1, Eds., E. Kasper and J. C. Bean, CRC Press (1986).

    Google Scholar 

  56. T. Pearsall, J. Bevk, L. C. Feldman, J. M. Bonar, and A. Ourmazd, J. Vac. Sci. Technol. B5, 1274(1987).

    Google Scholar 

  57. H. L. Stomer, Surf. Sci. 32, 519 (1983).

    Article  ADS  Google Scholar 

  58. T. K. Woodward, T. C. McGill, and R. D. Burnham, Appl. Phys. Lett. 50(8) 451 (1985).

    Article  ADS  Google Scholar 

  59. N. Yokoyama, K. Imamura, S. Muto, S. Hiyamizu, and H. Nishi, Jpn. J. Appl. Phys. 24, L853 (1985).

    Article  ADS  Google Scholar 

  60. F. Capasso and R. Kiehl, J. Appl. Phys. 58, 1366 (1985).

    Article  ADS  Google Scholar 

  61. A. R. Bonnefoi, T. C. McGill, and R. D. Burnham, IEEE Electron Dev. Lett EDL-6, 636 (1985).

    Article  ADS  Google Scholar 

  62. B. Ricco and M. Y. Azbel, Phys. Rev. B29,1979 (1984).

    ADS  Google Scholar 

  63. A. R. Bonnefoi, D. H. Chow, T. C. McGill, R. D. Burnhan, and F. A. Ponce, J. Vac. Sci. Technol. B4, 988 (1986).

    Google Scholar 

  64. R. T. Collins, J. Lambe, T. C. McGill, and R. D. Burnham, Appl. Phys. Lett. 44, 532 (1984).

    Article  ADS  Google Scholar 

  65. A. R. Bonnefoi, T. C. McGill, R. D. Burnham, and G. B. Anderson, Appl. Phys. Lett. 50(6), 344 (1987)

    Article  ADS  Google Scholar 

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Author information

Authors and Affiliations

  1. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, 94304, Palo Alto, CA, USA

    R. S. Bauer

  2. Department of Applied Physics, California Institute of Technology, Pasadena, CA, 91125, USA

    R. H. Miles & T. C. McGill

Authors
  1. R. S. Bauer
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  2. R. H. Miles
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  3. T. C. McGill
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Editor information

Editors and Affiliations

  1. Campus de Luminy, C.R.M.C.2, CNRS, Case 913, F-13288, Marseille, Cedex 09, France

    Guy Le Lay

  2. L.E.P.E.S., CNRS, BP 166, F-38042, Grenoble, France

    Jacques Derrien

  3. Centre de Physique Théorique, F-74310, Les Houches, France

    Nino Boccara

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© 1987 Springer-Verlag Berlin Heidelberg

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Bauer, R.S., Miles, R.H., McGill, T.C. (1987). Perspectives on Formation and Properties of Semiconductor Interfaces. In: Le Lay, G., Derrien, J., Boccara, N. (eds) Semiconductor Interfaces. Springer Proceedings in Physics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-72967-6_28

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  • DOI: https://doi.org/10.1007/978-3-642-72967-6_28

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-72969-0

  • Online ISBN: 978-3-642-72967-6

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