Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Abe, M., Mimura, T., Yokoyama, N., Ishikawa, H. R New technology towards GaAs LSI/VLSI for computer applications IEEE Trans-Microwave Theory Techn. MTT-30 992–998 (1982)
Abe, M., Mimura, T., Yokoyama, N., Ishikawa, H. R New technology towards GaAs LSI/VLSI for computer applications IEEE Trans. Electron. Devices ED-29 1088–1094 (1982)
Abstreiter, G., Doehler, G.H., Kuenzel, H., Olego, D., Ploog, K., Ruden, P., Stolz, H.J. Quantization of photoexcited electrons in GaAs nipi crystals Surf. Sci. 113 479–480 (1982)
Adachi, S., Kawashima, M., Kumabe, K., Yokoyama, K., Tomizawa, M. Electron transport in GaAs n+/p-/n+ submicron diodes IEEE Electron Device Lett. EDL-3 409–411 (1982)
Alexandre, F., Duhamel, N., Ossart, P., Masson, J.M., Meillerat, C. Problem related to the MBE growth at high substrate temperature for GaAs-Ga(1-x)Al(x)As double heterostructure lasers J. Physique 43 Colloque C5 C5/483-C5/489 (1982)
Alexandre, F., Masson, J.M., Post, G., Scavennec, A. A1N/GaAs structures grown by molecular beam epitaxy for metal/insulator/semiconductor devices Thin Solid Films 98 75–80 (1982)
Alvarado, S.F., Campagna, M., Hopster, H. Surface magnetism of Ni(001) near the critical region by spin-polarized electron scattering Phys. Rev. Lett. 48 51–54 (1982)
Andersson, T.G. R The initial growth of vapour deposited gold films Gold Bull. 15 7–18 (1982)
Andersson, T.G., Landgren, G., Svensson, S.P. Nucleation of Al on GaAs(001) Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 283–286 (1982)
Andersson, T.G., Svensson, S.P., Landgren, G. Interdiffusion and nucleation of Al monolayers on GaAs(001)-c(2x8) studied by AES J. Phys. C 15 6673–6676 (1982)
Ando, T. T Self-consistent results for a GaAs/Al(x)Ga(1-x) As heterojunction. 1. Subband structure and light-scattering spectra J. Phys. Soc. Jpn. 51 3893–3899 (1982)
Ando, T. T Self-consistent results for a GaAs/A1(x)Ga(1-x) As heterojunction. 2. Low temperature mobility J. Phys. Soc. Jpn. 3900–3907 (1982)
Ando, T. T Hall effect and electron localization in a two-dimensional system in strong magnetic fields in “Anderson Localization”, Eds. Y. Nagaoka and H. Fukuyama, Springer Ser. Solid-State Sci. Vol. 39 176–190 (1982)
Ando, T., Fowler, A.B., Stern, F. R Electronic properties of two-dimensional systems Rev. Mod. Phys. 54 437–672 (1982)
Ando, T., Mori, S. T Effective-mass theory of semiconductor heterojunctions and superlattices Surf. Sci. 113 124–130 (1982)
Ankri, D., Eastman, L.F. T GaA1As-GaAs ballistic heterojunction bipolar transistor Electron. Lett. 18 750–751 (1982)
Aoki, H., Ando, T. T Effect of Landau-band structure on the quantized Hall conductivity in two dimensions Surf. Sci. 113 27–31 (1982)
Arakawa, Y., Sakaki, H. T Multidimensional quantum well laser and temperature dependence of its threshold current Appl. Phys. Lett. 40 939–941 (1982)
Asahi, H., Kawamura, Y., Nagai, H. Molecular beam epitaxial growth of InGaA1P on (100) GaAs J. Appl. Phys. 53 4928–4931 (1982)
Asahi, H., Kawamura, Y., Nagai, H., Ikegami, T. MBE growth of InGaAlP/InGaP/InGaAlP double heterostructures on (100) GaAs Inst. Phys. Conf. Ser. 63 575–576 (1982)
Asahi, H., Kawamura, Y., Nagai, H., Ikegami, T.Optically pumped laser action at 77 K of InGaP/InGaA1P double heterostructures grown by MBE Electron. Lett. 18 62–63 (1982)
Asbeck, P.M., Miller, D.L., Asatourian, R., Kirkpatrick, C.G. T Numerical simulation of GaAs/GaA1As heterojunction bipolar transistors IEEE Electron Device Lett. EDL-3 403–406 (1982)
Asbeck, P.M., Miller, D.L., Petersen, W.C., Kirkpatrick, C.G. GaAs/GaA1As heterojunction bipolar transistors with cutoff frequencies above 10 GHz IEEE Electron Device Lett. EDL-3 366–368 (1982)
Bachrach, R.Z., Bringans, R.D. The Interaction of hydrogen with GaAs surfaces J. Physique 43 Colloque C5 C5/145–C5/151 (1982)
Bafleur, M., Munoz-Yague, A. Influence du processus d’elaboration sur les defauts cristallographiques dans les couches de GaAs epitaxiees par jets moleculaires J. Physique 43 Colloque C5 C5/465–C5/471 (1982)
Bafleur, M., Munoz-Yague, A., Rocher, A. Microtwinning and growth defects in GaAs MBE layers J. Cryst. Growth 59 531–538 (1982)
Ballingall, J.M., Wood, C.E.C. Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide Appl. Phys. Lett. 41 947–949 (1982)
Barnard, J.A., Wood, C.E.C., Eastman, L.F. Majority carrier light detectors with large gain-bandwidth products Inst. Phys. Conf. Ser. 63 461–466 (1982)
Barnard, J.A., Wood, C.E.C., Eastman, L.F. Preparation and properties of molecular beam epitaxy grown (A1 (0. 5) Ga (0. 5 ) 0. 48 ) In (0.52) As IEEE Electron Device Lett. EDL-3 318–319 (1982)
Barrett, J.H. T Planar channeling of ions in compound semiconductor superlattices J. Vac. Sci. Technol. 21 384–385 (1982)
Barrett, J.H. T Mechanism of ion dechanneling in compound semiconductor superlattices Appl. Phys. Lett. 40 482–484 (1982)
Bastard, G. T Theoretical investigations of superlattice band structure in the envelope-function approximation Phys. Rev. B 25 7584–7596 (1982)
Bastard, G. T Hydrogenic impurity states in a quantum well Surf. Sci. 113 165–169 (1982)
Bastard, G., Mendez, E.E., Chang, L.L., Esaki, L. T Self-consistent calculations in InAs-GaSb heterojunctions J. Vac. Sci. Technol. 21 531–533 (1982)
Bastard, G., Mendez, E.E., Chang, L.L., Esaki, L. T Exciton binding energy in quantum wells Phys. Rev. B 26 1974–1979 (1982)
Basu, B.K., Bhattacharya, K. T Acoustic and piezoelectric scattering of two-dimensional electron gas in junction FET structures J. Phys. C 15 5711–5714 (1982)
Bauer, R.S. R Interfaces of semiconducting molecular beam epitaxial films Thin Solid Films 89 419–432 (1982)
Bauer, R.S., Mikkelsen, J.C., Jr. Surface processes controlling MBE heterojunction formations GaAs(100)/Ge interfaces J. Vac. Sci. Technol. 21 491–497 (1982)
Beeby, J.L. T Dynamical processes at surfaces Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 245–248 (1982)
Beneking, H., Cho, A.Y., Dekkers, J.J.M., Morkoc, H. Buried-channel GaAs MESFET’s on MBE materials scattering parameters and intermodulation signal distortion IEEE Trans. Electron Devices ED-29 811–813 (1982)
Berezhkovskil, A.M., Ovchinnikov, A.A., Suris, R.A. T Interband absorption in a semiconductor with a superlattice subjected to quantizing magnetic and electric fields Sov. Phys. Semicond. 16 1147–1150
Berezhkovskil, A.M., Ovchinnikov, A.A., Suris, R.A. T Interband absorption in a semiconductor with a superlattice subjected to quantizing magnetic and electric fields Fiz. Tekh. Poluprovodn. 16 1788–1792 (1982)
Bethea, C.G., Chen, C.Y., Cho, A.Y., Garbinski, P.A. Opto-electronic picosecond sampling system utilizing a modulated barrier photodiode Appl. Phys. Lett. 40 591–594 (1982)
Bhattacharya, P.K., Buehlmann, H.J., Ilegems, M., Schmid, P., Melchior, H. Properties of a Ga(x)In(1-x)As-GaAs isotype heterojunction diode Appl. Phys. Lett 41 449–451 (1982)
Bhattacharya, P.K., Buehlmann, H.J., Ilegems, M, Staehli, J.L. Impurity and defect levels in beryllium-doped GaAs grown by molecular beam epitaxy J. Appl. Phys. 53 6391–6398 (1982)
Blanchet, R.C., Delhomme, B.J. Correlation between deposition conditions, Auger analysis and electrical characteristics of MBE-grown SiO films on GaAs Vacuum 32 3–8 (1982)
Blood, P., Harris, J.J., Joyce, B.A., Neave, J.H. Deep states and surface processes in GaAs grown by molecular beam epitaxy J. Physique 43 Colloque C5 C5/351–C5/355 (1982)
Blood, P., Roberts, J.S., Stagg, J.P. GalnP grown by molecular beam epitaxy doped with Be and Sn J. Appl. Phys. 53 3145–3149 (1982)
Bloss, W.L. T Optic and acoustic plasmon modes of a semiconductor superlattice Solid State Commun. 44 363–367 (1982)
Bloss, W.L., Brody, E.M. T Collective modes of a superlattice - plasmons, lo phonon-plasmons, and magnetoplasmons Solid State Commun. 43 523–528 (1982)
Bloss, W.L., Friedman, L. T Theory of optical mixing by mobile carriers in superlattices Appl. Phys. Lett. 41 1023–1025 (1982)
Bluyssen, H.J.A., Maan, J.C., Wyder, P., Chang, L.L., Esaki, L. Cyclotron resonance and Shubnikov-de Haas experiments in a n-InAs-GaSb superlattice Phys. Rev. B 25 5364–5372 (1982)
Bonnevie, D., Huet, D. Molecular beam epitaxial growth and characterization of In(0.53)Ga(0.47)As and InP substrate J. Physique 43 Colloque C5 C5/445–C5/452 (1982)
Briones, F., Collins, D.M. Low temperature photoluminescence of lightly Si-doped and undoped MBE GaAs J. Electron. Mater. 11 847–866 (1982)
Cadoret, R. R Growth by vacuum evaporation, sputtering, molecular beam epitaxy and chemical vapor deposition NATO Adv. Study Inst. Ser. C 87 453–488 (1982)
Capasso, F. T New ultra-low-noise avalanche photodiode with separated electron and hole avalanche regions Electron. Lett. 18 12–13 (1982)
Capasso, F. The channeling avalanche photodiode: a novel ultra-low-noise interdigitated p-n junction detector IEEE Trans. Electron Devices ED-29 1388–1395 (1982)
Capasso, F., Logan, R.A., Tsang, W.T. Interdigitated pn junction device with novel capacitance/voltage characteristic, ultralow capacitance and low punch-through voltage Electron. Lett. 18 760–761 (1982)
Capasso, F., Tsang, W.T., Hutchinson, A.L., Foy, P.W. The graded bandgap avalanche diodes a new molecular beam epitaxial structure with a large ionization rate ratio Inst. Phys. Conf. Ser. 63 473 (1982)
Capasso, F., Tsang, W.T., Hutchinson, A.L., Williams, S.F. Enhancement of electron impact ionization in superlatticess a new avalanche photodiode with a large ionization rate ratio Inst. Phys. Conf. Ser. 63 569–570 (1982)
Capasso, F., Tsang, W.T., Hutchinson, A.L., Williams, G.F. Enhancement of electron impact ionization in a superlattices a new avalanche photodiode with a large ionization rate ratio Appl. Phys. Lett. 40 38–40 (1982)
Capasso, F., Tsang, W.T., Williams, G.F. R New very low noise multilayer and graded-gap avalanche photodiodes for the 0.8 to 1.8 um wavelength region Proc. SPIE - Inst. Soc. Opt. Eng. 340 50–55 (1982)
Carter, C.B., DeSimone, D., Griem, T., Nood, C.E.C. Defects in heavily-doped MBE GaAs Proc. 40th Annu. Meet. Electron Microsc. Soc. Am. 40th 442–445 (1982)
Chai, Y.G., Chow, R. Molecular beam epitaxial growth of lattice-mismatched In0.77Ga0.23As on InP J. Appl. Phys. 53 1229–1232 (1982)
Chang, C.A. Thermal removal of surface carbon from GaAs substrate used in molecular beam epitaxy J. Vac. Sci. Technol. 21 663–665 (1982)
Chang, C.A. Interface morphology studies of (110) and (111) Ge-GaAs grown by molecular beam epitaxy Appl. Phys. Lett. 40 1037–1039 (1982)
Chang, C.A. Interface morphology of epitaxial growth of Ge on GaAs and GaAs on Ge by molecular beam epitaxy J. Appl. Phys. 53 1253 - 1255 (1982)
Chang, C.A. R Interface studies of heterostructures Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 131–134 (1982)
Chang, C.A., Takaoka, H., Chang, L.L., Esaki, L. Molecular beam epitaxy of AlSb Appl. Phys. Lett. 40 983–985 (1982)
Chang, L.L. R Polytype heterostructures Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 57–60 (1982)
Chang, L.L., Mendez, E.E., Kawai, N.J., Esaki, L. Shubnikov-de Haas oscillations under tilted magnetic fields in InAs-GaSb superlattices Surf. Sci. 113 306–312 (1982)
Chang, T.Y., Leheny, R.F., Nahory, R.E., Silberg, E., Ballmann, A.A., Caridi, E.A., Harrold, C.J. Junction field-effect transistors using In(0.53)Ga(0.47)As material grown by molecular beam epitaxy IEEE Electron Device Lett. EDL-3 56–58 (1982)
Chang, Y.C., Schulman, J.N. T Theory of heterostructures: A reduced Hamiltonian method with evanescent states and transfer matrices J. Vac. Sci. Technol. 21 540–543 (1982)
Chen, C.Y., Bethea, C.G., Cho, A-Y., Garbinski, P.A. Temporal resolution of an Al(x)Ga(1-x)As/GaAs bias-free photodetector Electron. Lett. 18 890–891 (1982)
Chen, C.Y., Cho, A.Y., Alavi, K., Garbinski, P.A. Short Channel Ga(0.47)In(0.53)As/Al(0.48)In(0.52)As selectively doped field effect transistors IEEE Electron Device Lett. EDL-3 205–208 (1982)
Chen, C.Y., Cho, A.Y., Bethea, C.G., Garbinski, P.A. Bias-free selectively doped Al(x)Ga(1-x)As-GaAs picosecond photodetectors Appl. Phys. Lett. 41 282–284 (1982)
Chen, C.Y., Cho, A.Y., Cheng, K.Y., Garbinski, P.A. Quasi-Schottky barrier diode on n-Ga0.47In0.53As using a fully depleted p+ -Ga0.47In0.53As layer grown by molecular beam epitaxy Appl. Phys. Lett. 40 401–403 (1982)
Chen, C.Y., Cho, A.Y., Cheng, K.Y., Pearsall, T.P., O’Connor, P., Garbinski, P.A. Depletion mode modulation doped A10.48In0.52As-Ga0.47In0.53As heterojunction field effect transistors IEEE Electron Device Lett. EDL-3 152–155 (1982)
Chen, C.Y., Cho, A.Y., Garbinski, P.A., Bethea, C.G. GaAs/AlxGal-xAs depletion stop phototransistor grown by molecular beam epitaxy Appl. Phys. Lett. 40 510–512 (1982)
Chen, C.Y., Cho, A.Y., Garbinski, P.A., Cheng, K.Y. Characteristics of an In(0.53)Ga(0.47)As very shallow junction gate structure grown by molecular beam epitaxy IEEE Electron Device Lett. EDL-3 15–17 (1982)
Chen, C.Y., Cho, A.Y., Gossard, A.C., Garbinski, P.A. Offset channel insulated gate field-effect transistors Appl. Phys. Lett. 41 360–362 (1982)
Chen, P., Bolmont, D., Sebenne, C.A. Preparation and electronic properties of abrupt Ge-GaAs(110) interfaces J. Phys. C 15 6101–6111 (1982)
Cheng, K.Y., Cho, A.Y. Silicon doping and impurity profiles in GaO.47InO.53As and A10.48In0.52As grown by molecular beam epitaxy J. Appl. Phys., 53 4411–4415 (1982)
Cheng, K.Y., Cho, A.Y. Electron mobilities in modulation doped GaO.47InO.53As/Al0-48InO.52As heterojunctions grown by molecular beam epitaxy Appl. Phys. Lett. 40 147–149 (1982)
Cheng, K.Y., Cho, A.Y. The growth of high purity Ga(0.47)In(0.53)As on InP by MBE Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyoj, 1982) 103–106 (1982)
Cheng, K.Y., Cho, A.Y., Christman, S.B., Pearsall, T.P., Rowe, J.E. Measurement of the gamma-L separation in GaO.471nO.53As by ultraviolet photoemission Appl. Phys. Lett. 40 423–425 (1982)
Chiang, T.C., Ludeke, R., Eastman, D.E. Photoemission studies of Al(x)Ga(1-x)As(100) surfaces grown by molecular-beam epitaxy Phys. Rev. B 25 6518–6521 (1982)
Cho, A.Y. R Overview on molecular beam epitaxy Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 3–7 (1982)
Cho, A.Y., Kollberg, E., Zirath, H., Snell, W.W., Schneider, M.V. Single-crystal metal-semiconductor microjunctions prepared by molecular beam epitaxy Electron. Lett. 18 424–425 (1982)
Chomette, A., Palmier, J.F. T Tenseur de mobilete d’un super-reseau en presence de desordre d’interface Solid State Commun. 43 157–161 (1982)
Christou, A., Davey, J.E., Covington, D.W. Thin MBE GaAs millimetre-wave mixer diode using Ge substrate Electron. Lett. 18 367–368 (1982)
Chut, N.K., Saris, F.W., Chang, C.A., Ludeke, R., Esaki, L. Ion-beam crystallography of InAs-GaSb superlattices Phys. Rev. B 26 1999–2010 (1982)
Ciccacci, F., Alvarado, S.F., Valeri, S. Spin-polarized photoelectron emission study of AlxGal-xAs alloys grown by molecular beam epitaxy J. Appl. Phys. 53 4395–4398 (1982)
Clegg, J.B., Foxon, C.T., Weimann, G. Secondary ion mass spectrometry study of lightly doped p-type GaAs films grown by molecular beam epitaxy J. Appl. Phys. 53 4518–4520 (1982)
Coleman, P.D. Real space transfer electron device oscillator - a new candidate for the near millimeter range Proc. SPIE - Int. Soc. Opt. Eng. 317 333–338 (1982)
Coleman, P.D., Freeman, J., Morkoc, H., Hess, K., Streetman, B.G., Keever, M. Demonstration of a new oscillator based on real-space transfer in heterojunctions Appl. Phys. Lett. 40 493–495 (1982)
Col1ins, D.M. On the use of “downward-looking” sources in MBE systems J. Vac. Sci. Technol. 20 250–251 (1982)
Collins, D.M., Miller, N.J. Sn and Te doping of molecular beam epitaxial GaAs using a SnTe source J. Appl. Phys. 53 3010–3018 (1982)
Cooper, J.A., Jr., Capasso, F., Thornber, K.K. T Semiconductor structures for repeated velocity overshoot IEEE Electron Device Lett. EDL-3 407–408 (1982)
Cox, N.W. R Application of molecular beam epitaxy to microwave and millimeter wave devices Proc. SPIE - Int. Soc. Opt. Eng. 317 325–332 (1982)
Cullis, A.G., Farrow, R.F.C., Chew, N.G., Williams, G.M. Electron microscope studies of the semiconductor to metal phase changes in epitaxial layers of elemental tin Inst. Phys. Conf. Ser. 61 535–538 (1982)
Daeweritz, L. T Facetting, steps and reconstruction on GaAs(001) Surf. Sci. 118 585–596 (1982)
Das Sarma, S. T Coupled electron-LO phonon modes of GaAs-Al(x)Ga(1-x)As multilayer systems Appl. S.rf. Sci. 11 /12 535–543 (1982)
Das Sarma, S., Quinn, J.J. T Collective excitations in semiconductor superlattices Phys. Rev. B 25 7603–7618 (1982)
DeSimone, D., Wood, C.E.C., Evans, C.A., Jr. Manganese incorporation behavior in molecular beam epitaxial gallium arsenide J. Appl. Phys. 53 4938–4942 (1982)
Delagebeaudeuf, D., Delescluse, P., Etienne, P., Massies, J., Laviron, M., Chaplart, J., Linh, N.T. Tunneling through GaAs-Al(x)Ga(1-x)As-GaAs double heterojunctions Electron. Lett. 18 85–87 (1982)
Delagebeaudeuf, D., Laviron, M., Delescluse, P., Tung, P.N., Chaplart, J., Linh, N.T. Planar enhancement mode two-dimensional electron gas FET associated with a low AlGaAs surface potential Electron. Lett. 18 103–105 (1982)
Delagebeaudeuf, D., Linh, N.T. T Metal-(n)AlGaAs-GaAs two-dimensional electron gas FET IEEE Trans. Electron Devices ED-29 955–960 (1982)
Delagebeaudeuf, D., Linh, N.T. T Speed power in planar two-dimensional electron gas FET DCFL circuits a theoretical approach Electron. Lett. 18 510–512 (1982)
Delescluse, P., Delagebeaudeuf, D., Tung, P.N., Pochette, J.F., Laviron, H., Etienne, P., Massies, J., Linh, N.T. MBE growth of GaAs/n-AlGaAs for FET applications Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 117–120 (1982)
DiLorenzo, J.V., Dingle, R., Feuer, M., Gossard, A.C., Hendel, R., Hwang, J.C.M., Kastalsky, A., Keramidas, V.G., Kiehl, R.A., O’Connor, P. R Material and device considerations for selectively doped heterojunction transistors IEDM 82 Technical Digest 578–581 (1982)
Dingle, R., Weisbuch, C., Stoermer, H.L., Morkoc, H., Cho, A. Y. Characterization of high purity GaAs grown by molecular beam epitaxy Appl. Phys. Lett. 40 507–510 (1982)
Dobson, P.J., Neave, J.H., Joyce, B.A. RHEED evidence for a domain structure of GaAs(001)-2x4 and -4x2 reconstructed surfaces Surf. Sci. 119 L339–L345 (1982)
Dobson, P.J., Scott, G.B., Neave, J.H., Joyce, B.A. The occurence of sharp exciton-like features in low temperature photoluminescence spectra from MBE grown GaAs Solid State Commun. 43 917–919 (1982)
Doehler, G.H. T Semiconductors with n-i -p-i doping super1attices - electrooptical device aspects Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 21-24 (1982)
Doehler, G.H-, Kuenzel, H., Ploog, K. Tunable absorption coefficient in GaAs doping superlattices Phys. Rev. B 25 2616 - 2626 (1982)
Dordzhin, G.S., Sadof’ev, Y.G., Senichkina, R.S-, Sharonova, L.V., Shik, A.Y. Silicon-gallium arse ide heterojunctions prepared by the method of molecular beam epitaxy Sov. Phys. Semicond. 16 1057–1058
Dordzhin, G.S., Sadof’ev, Y.G., Senichkina, R.S-, Sharonova, L.V., Shik, A.Y. Silicon-gallium arse ide heterojunctions prepared by the method of molecular beam epitaxy Fiz. Tekh. Pol uprovodn. 16 1654–1656 (1982.)
Drummond, T.J., Fischer, R.f Miller, P.A., Morkoc, H., Cho, A.Y. Influence of substrate temperature on electron mobility in normal and inverted single period modulatiozn doped Al(x)Ga(1-x)As/GaAs rheterojunctions J. Vac. Sci. Technol. 21 684–688 (19820
Drummond, T.J., Fischer, R-, Morkoc, H., Miller, P.A. Influence of substrate temperature on the mobility of modulation-doped AlxGa1-xAs/GaAs heterostructures grown by molecular beam epitaxy Appl. Phys. Lett. 40 430–432 (1982)
Drummond, T.J., Keever, M., Morkoc, H. Comparison of single and multiple period modulation doped Al(x)Ga(1-x)As/GaAs heterostuctures for FETs Jpn. J. Appl. Phys. 21 L65–L67 (1982)
Drummond, T.J., Kopp, W., Fischer, R., Morkoc, H. Influence of AlAs mole fraction on the electron mobility of (Al, Ga)As/GaAs heterostructures J. Appl. Phys. 53 1028–1029 (1982)
Drummond, T.J., Kopp, W., Fischer, R., Morkoc, H., Thorne, R.E., Cho, A.Y. Photoconductivity effects in extremely high mobility modulation-doped (Al, Ga)As J. Appl. Phys. 53 38–1240 (1982)
Drummond, T.J., Kopp, M., Keever, M., Morkoc, H., Cho, A.Y. Electron mobility in single and multiple period modulation-doped (Al, Ga)As/GaAs heterostructures J. Appl. Phys. 53 1023–1027 (1982)
Drummond, T.J., Kopp, W., Morkoc, H., Keever, M. Transport in modulation-doped structures (Al(x)Ga(1-x)As/GaAs) and correlations with Monte Carlo calculations (GaAs) Appl. Phys. Lett. 41 277–279 (1982)
Drummond, T.J., Kopp, W., Thome, R.E., Fischer, R., Morkoc, H. Influence of AlxGal-xAs buffer layers on the performance of modulation-doped field-effect transistors Appl. Phys. Lett. 40 879–881 (1982)
Drummond, T.J., Lyons, W.G., Fischer, R., Thorne, R.E., Horkoc, H., Hopkins, C.G., Evans, C.A., Jr. Si incorporation in As(x)Ga(1-x)As grown by molecular beam epitaxy J. Vac. Sci. Technol. 21 957–960 (1982)
Drummond, T.J., Morkoc, H., Cheng, K.Y., Cho, A.Y. Current transport in modulation-doped Ga0.47In0.53As/A10.48In0.52As heterojunctions at moderate electric fields J. Appl. Phys. 53 3654–3657 (1982)
Drummond, T.J., Morkoc, H., Cho, A.Y. R Molecular beam epitaxy growth of (Al, Ga)As/GaAs heterostructures J. Cryst. Growth 56 449–454 (1982)
Drummond, T.J., Su, S.L., Kopp, W., Fischer, R., Thorne, R.E., Morkoc, H., Lee, K., Shur, M.S. High-velocity n-on and n-off modulation doped GaAs/Al(x)Ga(l-x)As FETs IEDM 82 Technical Digest 586–589 (1982)
Drummond, T.J., Su, S.L., Lyons, W.G., Fischer, R., Kopp, W., Morkoc, H., Lee, K., Shur, M.S. Enhancement of electron velocity in modulation-doped (Al, Ga)As/GaAs FETs at cryogenic temperatures Electron. Lett. 18 1057–1058 (1982)
Drummond, T.J., Wang, T., Kopp, W., Morkoc, H., Thorne, R.E., Su, S.L. A novel normally-off camel diode gate GaAs field-effect transistor Appl. Phys. Lett. 40 834–836 (1982)
Duggan, G., Dawson, P., Foxon, C.T., Hooft, G.W. t’ The effect of arsenic species on the minority carrier properties of (AlGa)As-GaAs double heterostructures grown by MBE J. Physique 43 Colloque C5 C5/129–C5/134 (1982)
Eastman, L.F. The limits of electron ballistic motion in compound semiconductor transistors Inst. Phys. Conf. Ser. 63 245–250 (1982)
Eastman, L.F. R The limits of ballistic motion in compound semiconductor transistors Inst. Phys. Conf. Ser. 63 245–250 (1982)
Eastman, L.F. R Very high electron velocity in short gallium arsenide structures in “Festkoerperprobleme”, Ed. J. Treusch (Vieweg, Braunschweig, 1982) Vol. XXII 173–187 (1982)
Ebert, G., Klitzing, K. von, Probst, C., Ploog, K. Magneto-quantumtransport on GaAs-Al(x)Sa(1-x)As heterostructures at very low temperatures Solid State Commun. 44 95–98 (1982)
Englert, T., Tsui, D.C., Gossard, A.C., Uihlein, C. g-factor enhancement in the 2D electron gas in GaAs/AlGaAs heterojunctions Surf. Sci. 113 295–300 (1982)
Englert, T., Tsui, D. C., Portal, J.C., Beerens, J., Gossard, A.C. Magnetophonon resonances of the two-dimensional electron gas in GaAs/AlGaAs heterostructures Solid State Commun. 44 1301–1304 (1982)
Esaki, L. R Advances in synthesized superlattices Lect. Notes Phys. 152 340–351 (1982)
Esaki, L. R Advances in synthesized superlattices in “Novel Materials and Techniques in Condensed Matter”, Eds. G.W. Crabtree and P. Vashishta (Elsevier, New York, 1982) 1–19 (1982)
Farrow, R.F.C., Sullivan, P.W., Williams, G.M., Stanley, C.R. The performance of a double oven as an arsenic dimer source for MBE Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 169–172 (1982)
Favennec, P.N., Henry, L., Regreny, A., Salvi, M. Selected-area molecular beam epitaxy on ion-implanted GaAs substrates Electron. Lett. 18 933–935 (1982)
Feng, M., Eu, V.K., D’Haenens, I.J., Braunstein, M. Low-noise GaAs fiel-effect transistor made by molecular beam epitaxy Appl. Phys. Lett. 41 633–635 (1982)
Fischer, A., Graf, K., Hafendoerfer, M., Kuenzel, H., Ploog, K. Rechnersteuerung fuer den Betrieb von Molekularstrahl-Epitaxie-Anlagens 1) Grundlagen und Aufbau der Hardware 2) Programmsystem und Anwendung bei der Epitaxie Techn. Messen 49 403–408, 461–469 (1982)
Foxon, C.T., Dawson, P., Duggan, G., Hooft, G.N. t’ The effect of arsenic species, As2 or As4, on the optical properties of (AlGa)As-GaAs double heterostructures grown by MBE Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 81–84 (1982)
Freller, H., Guenther, K.G. R Three-temperature method as an origin of molecular beam epitaxy Thin Solid Films 88 291–307 (1982)
Fujii, T., Hiyamizu, S., Wada, O., Sugahara, T., Yamakoshi, S., Ishikawa, T., Sakurai, T., Hashimoto, H. Extremely uniform GaAs-AlGaAs heterostructure layers with high optical quality by MBE Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 85–88 (1982)
Fukuyama, H., Platzman, P.M. T Coulomb correlations and the quantum Hall effect Phys. Rev. B 25 2934–2936 (1982)
Gant, H., Moench, W. On the chemisorption of Ge on GaAs(100) surfacess UPS and work function measurements Appl. Surf. Sci. 11 /12 332–347 (1982)
Ghibaudo, G., Kamarinos, G. T Thermopower of a quasi-two-dimensional electron gas Phys. Status Solidi B 114 K105–K110 (1982)
Gibbs, H.M., Jewell, J.L., Moloney, J.V., Tarng, S.S., Tai, K., Watson, E.A., Gossard, A.C., McCall, S.L., Passner, A., Venkatesan, T.N.C., Wiegmann, W. Switching of a GaAs bistable etalons external switching on and off, regenerative pulsations, transverse effects, and lasing Proc. SPIE - Int. Soc. Opt. Eng. 321 67–74 (1982)
Bibbs, H.M., Tarng, S.S., Jewell, J.L., Weinberger, D.A., Tai, K., Bossard, A.C., McCall, S.L., Passner, A., Wiegmann, W. Room-temperature excitonic optical bistability in a GaAs-GaAlAs superlattice etalon Appl. Phys. Lett. 41 221–222 (1982)
Goldstein, L., Quillec, M., Rao, E.V.K., Henoc, P., Masson, J.M., Marzin, J.Y. Preparation and characterization of strained superlattices structures of InGaAs/GaAs by MBE J. Physique 43 Colloque C5 C5/201–C5/207 (1982)
BoneaIves da Silva, C.E.T., Fulco, P. Electronic states associated with extended defects in quantum well structures Rev. Bras. Fis. 12 325–336 (1982)
Bossard, A.C. New phenomena in superlattice structures Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 35–38 (1982)
Bossard, A.C. Molecular beam epitaxy of superlattices in thin films in “Treatise on Material Science and Technology” Vol. 24: ‘Thin Films: Preparation and Properties’, Eds. K.N.Tu and R.Rosenberg (Academic Press, New York, 1982) 13–66 (1982)
Bossard, A.C., Brown, W., Allyn, C.L., Wiegmann, W. Molecular beam epitaxial growth and electrical transport of graded barriers for nonlinear current conduction J. Vac. Sci. Technol. 20 694–700 (1982)
Bossard, A.C., Kazarinov, R.F., Luryi, S., Wiegmann, W. Electric properties of unipolar GaAs structures with ultrathin triangular barriers Appl. Phys. Lett. 40 832–833 (1982)
Gossard, A.C., Wiegmann, W., Miller, R.C., Petroff, P.M., Tsang, W.T. Growth of single-quantum-well structures by molecular beam epitaxy Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 39–42 (1982)
Gotoh, H., Yamamoto, T., Kimata, M. Molecular beam epitaxy of In(0.2)Ga(0.8)Sb Jpn. J. Appl. Phys. 21 L767–L769 (1982)
Grange, J.D. R System related impurity incorporation during the growth of gallium arsenide by molecular beam epitaxy Vacuum 32 477–480 (1982)
Grondin, R.O., Lugli, P., Ferry, D.K. T Ballistic transport in semiconductors IEEE Electron Device Lett. EDL-3 373–375 (1982)
Guldner, Y., Vieren, J.P., Voisin, P., Voos, M., Maan, J.C., Chang, L.L., Esaki, L. Observation of double cyclotron resonance and interband transitions in InAs-GaSb multi-heterojunctions Solid State Commun. 41 755–758 (1982)
Halperin, B.I. T Quantized Hall conductance, current-carrying edge states, and the existence of extended states in a two-dimensional disordered potential Phys. Rev. B 25 2185–2190 (1982)
Harris, J.H., Sugai, S., Nurmikko, A.V. Interface recombination and carrier confinement at a GaAs/Ga(x)In(1-x)P double heterojunction studied by picosecond population modulation spectroscopy Appl. Phys. Lett. 40 885–887 (1982)
Harris, J.J., Joyce, B.A., Bowers, J.P., Neave, J.H. Nucleation effects during MBE growth of Sn-doped GaAs Appl. Phys. A 28 63–71 (1982)
Hegarty, J., Sturge, M.D., Gossard, A.C., Wiegmann, W. Resonant degenerate four-wave mixing in GaAs multiquantum well structures Appl. Phys. Lett. 40 132–134 (1982)
Hegarty, J., Sturge, M.D., Weisbuch, C., Gossard, A.C., Wiegmann, W. Resonant Rayleigh scattering from an inhomogeneously broadened transitions a new probe of the homogeneous linewidth Phys. Rev. Lett. 49 930–932 (1982)
Heiblum, M., Nathan, M.I., Chang, C.A. Charactersitics of AuGeNi ohmic contacts to GaAs Solid-State Electron. 25 185–195 (1982)
Herman, M.A. R Physical problems concerning effusion processes of semiconductors in molecular beam epitaxy Vacuum 32 555–565 (1982)
Hierl, T.L., Luscher, P.E. Production of microwave devices by MBE Collected Papers of MBE-CST-2., Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 147–150 (1982)
Hikosaka, K., Mimura, T., Hiyamizu, S. Deep electron traps in MBE-grown AlGaAs ternary alloy for heterojunction devices Inst. Phys. Conf. Ser. 63 233–238 (1982)
Hiyamizu, S. R Recent developments in MBE GaAs/n-AlGaAs heterostructures and HEMTs Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 113–116 (1982)
Hiyamizu, S., Mimura, T. R High mobility electrons in selectively doped GaAs/n-AlGaAs heterostructures grown by MBE and their application to high-speed devices J. Cryst. Growth 56 455–463 (1982)
Hiyamizu, S., Mimura, T. R MBE-grown selectiveliy doped GaAs/n-AlGaAs heterostructures and their application to high electron mobility transistors Jpn. Annu. Rev. Electron., Comput. & Telecommun.: Semicond. Technol. 7 258–271 (1982)
Hiyamizu, S., Mimura, T., Ishikawa, T. R MBE-grown GaAs/N-AlGaAs heterostructures and their application to high electron mobility transistors Jpn. J. Appl. Phys. 21, Suppl. 21-1 161–168 (1982)
Hjalmarson, H.P. T Band structure of impurity-sheet-doped superlattice alloys J. Vac. Sci. Technol. 21 524–527 (1982)
Hoepfel, R.A., Lindemann, G., Garnik, E., Stangl, G., Gossard, A.C., Wiegmann, W. Cyclotron and plasmon emission from two-dimensional electrons in GaAs Surf. Sci. 113 118–123 (1982)
Holah, G.D., Eisele, F.L., Meeks, E.L., Cox, N.W. Growth of InGaAsP by molecular beam epitaxy Appl. Phys. Lett. 41 1073–1075 (1982)
Holonyak, N., Jr., Vojak, B.A., Morkoc, H., Drummond, T.J., Hess, K. Stimulated emission in a degenerately doped GaAs quantum well Appl. Phys. Lett. 40 658–660 (1982)
Holonyak, N., Jr., Vojak, B.A., Morkoc, H., Drummond, T.J., Hess, K. Stimulated emission in a degenerately doped GaAs quantum well Appl. Phys. Lett. 40 658–660 (1982)
Hoskins, M.J., Morkoc, H., Hunsinger, B.J. Charge transport by surface acoustic waves in GaAs Appl. Phys. Lett. 41 332–334 (1982)
Hotta, T., Sakaki, H., Ohno, H. A new AlGaAs/GaAs heterojunction FET with insulated gate structure (MISSFET) Jpn. J. Appl. Phys. 21 L122–L124 (1982)
Hove, J.M. van, Cohen, P.I. Development of steps on GaAs during molecular beam epitaxy J. Vac. Sci. Technol. 20 726–729 (1982)
Hwang, J.C.M., DiLorenzo, J.V., Luscher, P.E., Knodle, U.S. Application of molecular beam epitaxy to III-V microwave and high speed device fabrication Solid State Technol. 25 No. 10 166–169 (1982)
Hwang, J.C.M., Flahive, P.G., Nemple, S.H. Performance of power FET’s fabricated on MBE-grown GaAs layers IEEE Electron Device Lett. EDL-3 320–321 (1982)
Iafrate, G.J., Ferry, D.K., Reich, R.K. T Lateral (two-dimensional) super1atticess quantum-well confinement and charge instabilities Surf. Sci. 113 485–488 (1982)
Imry, Y. T The quantized Hall effect and other macroscopic quantum phenomena in “Anderson Localization”, Eds. Y. Nagaoka and H. Fukuyama, Springer Ser. Solid-State Sci. Vol. 39 198–206 (1982)
Inoue, M., Hiyamizu, S., Hida, H., Nanbu, K., Hashimoto, H., Inuishi, Y. Transport properties of 2D hot electrons at modulation-doped GaAs/AlGaAs interfaces Inst. Phys. Conf. Ser. 63 257–262 (1982)
Iordansky, S.V. T On the conductivity of two dimensional electrons in a strong magnetic field Solid State Comm. 43 1–3 (1982)
Ishibashi, T., Tarucha, S., Okamoto, H. Si and Sn doping in AL(x)Ga(1-x)As grown by MBE Jpn. J. Appl. Phys. 21 L476–L478 (1982)
Ishibashi, T., Tarucha, S., Okamoto, H. Si and Sn doping in Al(x)Ga(1-x)As grown by MBE Collected Papers of MBE-CST-2., Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 25–28 (1982)
Ishibashi, T., Tarucha, S., Okamoto, H. Exciton associated optical absorption spectra of AlAs/GaAs superlattices at 300 K Inst. Phys. Conf. Ser. 63 587–588 (1982)
Ishikawa, T., Saito, J., Sasa, S., Hiyamizu, S. Electrical properties of Si-doped Al(x)Ga(1-x)As layers grown by MBE Jpn. J. Appl. Phys. 21 L675–L676 (1982)
Iwamura, H., Saku, T., Ishibashi, T., Naganuma, N., Okamoto, H. Comparison between a conventional DH and an MOW laser grown by MBE Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 47–50 (1982)
Jenkinson, H.A., Zavada, J.M., Laidig, W.D., Wortman, J.J., Littlejohn, M.A. GaAs MBE layers for infrared optical waveguiding Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) * 95–98 (1982)
Jewell, J.L., Bibbs, H.M., Tarng, S.S., Gossard, A.C., Wiegmann, W. Regenerative pulsations from an intrinsic bistable optical device Appl. Phys. Lett. 40 291–293 (1982)
Jiang, D.S., Hakita, Y., Ploog, K., Queisser, H.J. Electrical properties and photoluminescence of Te-doped GaAs grown by molecular beam epitaxy J. Appl. Phys. 53 999–1006 (1982)
Joyce, B.A. R Surface processes and film properties in MBE growth of III-V compounds Collected Papers of MBE-CST-2, Ed- R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982 ) 9–13 (1982)
Joyce, B.A. R Kinetics, mechanisms and surface processes in molecular beam epitaxy of III-V compounds and alloys in “Proc. Int. Workshop Phys. Semicond. Devices”, Eds. S.C. Jain and S. Radhakrishna (Wiley East, New Delhi, 1982) 542–550 (1982)
Jung, H., Doehler, G.H., Kuenzel, H., Ploog, K., Ruden, P., Stolz, H. J. Photoluminescence study of electron-hole recombination across the tunable effective gap in GaAs n-i-p-i superlattices Solid State Commun. 43 291–294 (1982)
Jung, H., Kuenzel, H., Ploog, K. Influence of arsenic vapor species on electrical and optical properties of MBE grown GaAs J. Physique 43 Colloque C5 C5/135–C5/143 (1982)
Kahn, A., Carelli, J., Miller, D.L., Kowalczyk, S.P. Comparative LEED studies of Al(x)Ga(1-x)As(110) and GaAs (110)-Al J. Vac. Sci. Technol. 21 380–383 (1982)
Kastalsky, A., Dingle, R., Cheng, K.Y., Cho, A.Y. Two-dimensional electron gas at molecular beam epitaxial-grown, selectively doped. In (0.53)Ga (0.47)As-In(0.48)Al (0.52)As interface Appl. Phys. Lett. 41 274–277 (1982)
Kawabe, M., Matsuura, N., Inuzuka, H. Composition control of Al(x)Ga(1-x)As and new type of superlattice by pulsed molecular beam Jpn. J. Appl. Phys. 21 L447–L448 (1982)
Kawabe, M., Matsuura, N., Toda, K., Inuzuka, H. A new composition control method of Al (x)Ga (1-x)As by molecular beam epitaxy Jpn. J. Appl. Phys. 21, Suppl. 21-1 439–440 (1982)
Kawai, N.J., Wood, C.E.C., Eastman, L.F. Carrier compensation at interfaces formed by molecular beam epitaxy J. Appl. Phys. 53 6208–6213 (1982)
Kawamura, Y., Asahi, H., Nagai, H., Ikegami, T. Doping studies of InGaP and InGaAlP by MBE Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 99–102 (1982)
Kawamura, Y., Noguchi, Y., Asahi, H., Nagai, H. MBE-grown InGaAs/InP BH lasers with LPE burying layers Electron. Lett. 18 91–92 (1982)
Kawanami, H., Sakamoto, T., Takahashi, T., Suzuki, E., Nagai, K. Heteroepitaxial growth of GaP on a Si(100) substrate by molecular beam epitaxy Jpn. J. Appl. Phys. 21 L68–L70 (1982)
Kazarinov, R.F., Luryi, S. T Quantum percolation and quantization of Hall resistance in two-dimensional electron gas Phys. Rev. B 25 7626–7630 (1982)
Keever, M., Drummond, T.J., Morkoc, H., Hess, K., Streetman, B.G., Ludowise, M. Hall effect and mobility in heterojunction layers J. Appl. Phys. 53 1034–1036 (1982)
Keever, M., Kopp, M., Drummond, T.J., Morkoc, H., Hess, K. Current transport in modulation-doped Al(x)Ga(1-x)As/GaAs heterojunction structures at moderate field strengths Jpn. J. Appl. Phys. 21 1489–1495 (1982)
Kido, G., Miura, N., Ohno, H., Sakaki, H. Magnetophonon resonance in a two-dimensional electron system in the GaAs-Al(x)Ga(1-x)As heterojunction interface J. Phys. Soc. Jpn. 51 2168–2173 (1982)
Kim, J.Y., Madhukar, A. T Electronic structure of GaP-AlP(100) superlattices J. Vac. Sci. Technol. 21 528–530 (1982)
Kitahara, K., Nakai, K., Shibatomi, A., Ohkawa, S. Current limitation induced by infrared light in n-type GaAs thin layers on semi-insulating Cr-doped GaAs Jpn. J. Appl. Phys. 21 513–516 (1982)
Klitzing, K. von R Two-dimensional systems: A method for the determination of the fine structure constant Surf. Sci. 113 1–9 (1982)
Kondo, K., Muto, S., Nanbu, K., Ishikawa, T., Hiyamizu, S., Hashimoto, H. Effect of H2 on the quality of Si-doped Al (x)Ga (1-x)As grown by MBE Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 173–176 (1982)
Kopp, W., Drummond, T.J., Mang, T., Morkoc, H., Su, S.L. A novel camel diode gate GaAs FET IEEE Electron Device Lett. EDL-3 86–88 (1982)
Kopp, W., Fischer, R., Thorne, R.E., Su, S.L., Drummond, T.J., Morkoc, H., Cho, A.Y. A new Al(0.3)Ga(0.7)As/GaAs modulation-doped FET IEEE Electron Device Lett. EDL-3 109–111 (1982)
Kopp, W., Morkoc, H., Drummond, T.J., Su, S.L. Characteristics of submicron gate GaAs FET’s with AL(0.3)Ga(0.7)As buffers: effects of interface quality IEEE Electron Device Lett. EDL-3 46–48 (1982)
Kopp, W., Su, S.L., Fischer, R., Lyons, W.G., Thorne, R.E., Drummond, T.J., Morkoc, H., Cho, A.Y. Use of a GaAs smoothing layer to improve the heterointerface of GaAs/Al(x)Ga(1-x) As field-effect transistors Appl. Phys. Lett. 41 563–565 (1982)
Kowalczyk, S.P., Schaffer, W.J., Kraut, E.A., Grant, R.W. Determination of the InAs-GaAs(100) heterojunction band discontinuities by x-ray photoelectron spectroscopy (XPS) J. Vac. Bei. Technol. 20 705–708 (1982)
Kroemer, H., Zhu, Q.G. T On the interface connection rules for effective-mass wave functions at an abrupt heterojunction between two semiconductors with different effective mass J. Vac. Sci. Technol. 21 551–553 (1982)
Kubiak, R.A., Driscoll, P., Parker, E.H.C. A simple source design for MBE J. Vac. Sci. Technol. 20 252–253 (1982)
Kuenzel, H., Doehler, G.H., Ploog, K. Determination of photoexcited carrier concentration and mobility in GaAs doping superlattices by hall effect measurements Appl. Phys. A 27 1–10 (1982)
Kuenzel, H., Jung, H., Schubert, E.F., Ploog, K. Influence of growth conditions and of alloy composition on electrical and optical properties of MBE A1(x)Ga(1-x)As (0.2(= x(= 0.4) J. Physique 43 Colloque C5 C5/175–C5/182 (1982)
Kuenzel, H., Knecht, J., Jung, H., Wuenstel, K., Ploog, K. The effect of arsenic vapour species on electrical and optical properties of GaAs grown by molecular beam epitaxy Appl. Phys. A 28 167–173 (1982)
Lambert, B., Deveaud, B., Regreny, A., Talalaeff, G. Impurity photoluminescence in GaAs/Ga(1-x)Al(x)As multiple quantum wells Solid State Commun. 43 443–446 (1982)
Landgren, G., Ludeke, R., Serrano, C.H. Epitaxial Al films on GaAs(100) surfaces J. Cryst. Growth 60 393–402 (1982)
Landgren, G., Svensson, S.P., Andersson, T.G. Temperature and reconstruction dependence of the initial Al growth on GaAs(001) Surf. Sci. 122 55–68 (1982)
Larsen, P.K., Veen, J.F. van der Surface band structure of MBE-grown GaAs(001)-2x4 J. Phys. C 15 L431–L435 (1982)
Larsen, P.K., Veen, J.F. van der, Mazur, A., Pollmann, J., Neave, J.H., Joyce, B.A. Surface electronic structure of GaAs(001)-(2x4): Angle-resolved photoemission and tight-binding calculations Phys. Rev. B 26 3222–3237 (1982)
Laughlin, R.B. T Impurities and edges in the quantum Hall effect Surf. Sci. 113 22–26 (1982)
Laviron, M., Delagebeaudeuf, D., Delescluse, P., Etienne, P., Chaplart, J., Linh, N.T. Low noise normally on and normally off two-dimensional electron gas field effect transistors Appl. Phys. Lett. 40 530–532 (1982)
Levine, B.F., Tsang, W.T., Bethea, C.G., Capasso, F. Electron drift velocity measurement in compositionally graded Al(x)Ga(1-x)As by time-resolved optical picosecond reflectivity Appl. Phys. Lett. 41 470–472 (1982)
Linh, N.T., Delagebeaudeuf, D., Laviron, M., Delescluse, P., Chaplart, J. Low-noise two dimensional electron gas MESFETs Inst. Phys. Conf. Ser. 63 585–586 (1982)
Linh, N.T., Tung, P.N., Delagebeaudeuf, D., Delescluse, P., Laviron, M. R High speed - low power GaAs/AlGaAs TEGFET integrated circuit IEDM 82 Technical Digest 582–585 (1982)
Liu, Y.Z. An enhancement mode Schottky barrier gate charge-coupled device on a high electron mobility transistor structure Appl. Phys. Lett. 41 874–876 (1982)
Low, T.S., Stillman, G.E., Cho, A.Y., Morkoc, H., Calawa, A.R. Spectroscopy of donors in high purity GaAs grown by molecular beam epitaxy Appl. Phys. Lett. 40 611–613 (1982)
Low, T.S., Stillman, G.E., Collins, D.M., Wolfe, C.M., Tiwari, S., Eastman, L.F. Spectroscopic identification of Si donors in GaAs Appl. Phys. Lett. 40 1034–1036 (1982)
Ludeke, R., Chiang, T.C., Eastman, D.E. Crystallographic relationships and interfacial properties of Ag on GaAs(100) surfaces J. Vac. Sci. Technol. 21 599–606 (1982)
Lykakh, V.A., Tetervov, A.P. Cyclotron resonance in a degenerate plasma of a semi conductor with a superlattice Sov. Phys. Semicond. 18 1358–1360
Lykakh, V.A., Tetervov, A.P. Cyclotron resonance in a degenerate plasma of a semi conductor with a superlattice Fiz. Tekh. Poluprovodn. 16 2105–2109 (1982)
Maan, J.C., Altarel 1 i, M., Sigg, H., Wyder, P., Chang, L.L., Esaki, L. Effective mass determination of a highly doped InAs-GaSb superlattice using helicon wave propagation Surf. Sci. 113 347–352 (1982)
Maan, J.C., Englert, T., Tsui, D.C., Bossard, A.C. Observation of cyclotron resonance in the photoconductivity of two-dimensional electrons Appl. Phys. Lett. 40 609–610 (1982)
Maan, J.C., Uihlein, C., Chang, L.L., Esaki, L. Hybrid cyclotron-intersubband resonance in thin InAs layers confined between GaSb Solid State Commun. 44 653–656 (1982)
Madhukar, A. T Modulated semi conductor structures: An overview of some basic considerations for growth and desired electronic structure J. Vac. Sci. Technol. 20 149–161 (1982)
Mailhiot, C., Chang, Y.C., McGill, T.C. T Energy spectra of donors in GaAs-Ga(1-x)Al(x) As quantum well structures in the effective-mass approximation Phys. Rev. B 26 4449’4457 (1982)
Mailhiot, C., Chang, Y.C., McBill, T.C. T Energy spectra of donors in GaAs-Ga(1-x)Al(x) As quantum well structures in the effective mass approximation J. Vac. Sci. Technol. 21 519–523 (1982)
Mailhiot, C., Chang, Y.C., McGill, T.C. T Energy spectra of donors in GaAs-Ga(1-x)Al(x) As quantum well structures Surf. Sci. 113 161’164 (1982)
Malik, R.J. The design and growth of GaAs planar doped barriers by MBE Mater. Lett. 1 22–25 (1982)
Malik, R.J. T Planar doped barriers and their device applications Collected Papers of MBE-CST-2;, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 29–32 (1982)
Malik, R.J. Planar doped barriers by molecular beam epitaxy for millimeter wave devices Proc. SPIE - Int. Soc. Opt. Eng. 317 243–250 (1982)
Malik, R.J., Dixon, S. A subharmonic mixer using a planar doped barrier diode with symmetric conductance IEEE Electron Device Lett. EDL-3 205–207 (1982)
Maloney, T.J., Saxena, R.R., Chai, Y.G. AlGaAs/GaAs JFETs by organometallie and molecular beam epitaxy Electron. Lett. 18 112–113 (1982)
Massies, J., Delescluse, P., Etienne, P., Linh, N.T. The growth of silver on GaAs (100): epitaxial relationships, mode of growth and interfacial diffusion Thin Solid Films 90 113–118 (1982)
Massies, J., Delescluse, P., Linh, N.T. R The use of MBE and standard surface techniques in the study of the growth of metals on GaAs Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 287–290 (1982)
Massies, J., Linh, N.T. On the growth of silver on GaAs(100) surfaces J. Cryst. Growth 56 25–38 (1982)
Massies, J., Linh, N.T. Epitaxial relationships between Al, Ag, and GaAs (001) surfaces Surf. Sci. 114 147–160 (1982)
Massies, J., Linh, N.T. Ag M(4, 5)N(4, 5)N(4, 5) Auger lineshape variation during the epitaxial growth of Ag onto GaAs(001) J. Physique 43 939–944 (1982)
Massies, J., Rochette, J.F., Delescluse, P., Etienne, P., Chevrier, J., Linh, N.T. High-mobility Ga(0.47)In(0.53)As thin epitaxial layers grown by MBE, very closely lattice-matched to InP Electron. Lett. 18 758–760 (1982)
Masu, K., Hiroi, S., Mishima, T., Konagai, M., Takahashi, K. Preparation of (Al(x)Ga(a-x))(y)In(l~y)As (0(=x(=0.5, y ==0.47) lattice matched to InP substrate grown by molecular beam epitaxy Inst. Phys. Conf. Ser. 63 577–578 (1982)
Masu, K., Mishima, T., Hiroi, S., Konagai, M., Takahashi, K. Preparation of CAl(x)Ga(1-x)3(y)In(1-y) As (0( =x(=0.5, y=0.47) lattice matched to InP substrates by molecular beam epitaxy J. Appl. Phys. 53 7558–7560 (1982)
McAfee, S.R., Lang, D.V., Tsang, W.T. Observation of deep levels associated with the GaAs/AlxGal-xAs interface grown by molecular beam epitaxy Appl. Phys. Lett. 40 520–522 (1982)
McLevige, W.V., Yuan, H.T., Duncan, W.M., Frensley, W.R., Doerbeck, F.H., Morkoc, H., Drummond, T.J. GaAs/AlGaAs heterojunction bipolar transistors for integrated circuit applications IEEE Electron. Device Lett. EDL-3 43–45 (1982)
Mendez, E.E., Bastard, G., Chang, L.L., Esaki, L., Morkoc, H., Fischer, R. Effect of an electric field on the luminescence of GaAs quantum wells Phys. Rev. B 26 7101–7104 (1982)
Mendez, E.E., Chartg, L.L., Esaki, L. T Two-dimensional quantum states in multi-heterostructures of three constituents Surf. Sci. 113 474–478 (1982)
Merlin, R., Pinczuk, A., Beard, W.T., Wood, C.E.C. Light scattering study of electrons confined at the Ge/GaAs interfaces J. Vac. Sci. Technol. 21 516–518 (1982)
Milano, R.A., Cohen, M.J., Miller, D.L. Modulation-doped AlGaAs/GaAs heterostructure charge coupled devices IEEE Electron Devive Lett. EDL-3 194–196 (1982)
Milanovic, V., Tjapkin, D. T Determination of the potential distribution in semi conductor heterostructures in the presence of quantum effects Physica 114B 375–378 (1982)
Milanovic, V., Tjapkin, D. T Energy band calculation and zero energy gap conditions for semi conductor superlattices Phys. Status Solidi B 110 687–695 (1982)
Miller, D.A.B., Chemla, D.S., Eilenberger, D.J., Smith, P.M., Gossard, A.C., Tsang, W.T. Large room-temperature optical nonlinearity in GaAs/Ga(I-x)Al(x)As multiple quantum well structures Appl. Phys. Lett. 41 679–681 (1982)
Miller, D.L., Asbeck, P.M., Petersen, W.C. (AlGa)As/GaAs bipolar transistors grown by molecular beam epitaxy Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 121–124 (1982)
Miller, D.L., Harris, J.S., Jr., Asbeck, P.M. An MBE AlGaAs/GaAs heterojunction bipolar transistor Inst. Phys. Conf. Ser. 63 579–580 (1982)
Miller, D.L., Yang, H.T., Zehr, S.W. Cascade AlGaAs-GaAs solar cell researching using molecular beam epitaxy Proc. SPIE - Int. Soc. Opt. Eng. 323 17–22 (1982)
Miller, D.L., Zehr, S.W., Harris, J.S., Jr. GaAs-AlGaAs tunnel junctions for multigap casade solar cells J. Appl. Phys. 53 2084–2088 (1982)
Miller, R.C., Gossard, A.C., Tsang, W.T., Munteanu, O. Extrinsic photoluminescence from GaAs quantum wells Phys. Rev. B 25 3871–3877 (1982)
Miller, R.C., Gossard, A.C., Tsang, W.T., Munteanu, O. Bound excitons in p-doped GaAs quantum wells Solid State Commun. 43 519–522 (1982)
Miller, R.C., Kleinman, D.A., Gossard, A.C., Munteanu, O. Biexcitons in GaAs quantum wells Phys. Rev. B 25 6545–6547 (1982)
Miller, R.C., Tsang, W.T., Munteanu, O. Extrinsic layer at Al(x)Ga(1-x)As-GaAs interfaces Appl. Phys. Lett. 41 374–376 (1982)
Mimura, T, R The present status of modulation-doped and insulated-gate field-effect transistors in III-V semi conductors Surf. Sci. 113 454–463 (1982)
Miyao, M., Chinen, K., Niigaki, M., Hagino, M. MBE growth of transmission photocathode and ‘in situ’ NEA activation Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 107–109 (1982)
Mon, K.K. T Electronic band structure of (001)GaAs-AlAs superlattices Solid State Commun. 41 699–700 (1982)
Morgan, D.V., Board, K., Wood, C.E.C., Eastman, L.F. Current transport in Al/InAlAs/InGaAs heterostructures Phys. Status Solidi A 72 251–260 (1982)
Morkoc, H. A short-channel GaAs FET fabricated like a MESFET, but operating like a JFET Jpn. J. Appl. Phys. 21 L233–L234 (1982)
Morkoc, H. Influence of MBE growth conditions on the properties of Al(x)Ga(1-x)As/GaAs heterostructures J. Physique 43 Colloque C5 C5/209–C5/220 (1982)
Morkoc, H. Short-channel GaAs FET fabricated like a MESFET but operating like a JFET Electron. Lett. 18 258–259 (1982)
Morkoc, H., Drummond, T.J., Camras, M.D., Hoionyak, N., Jr. Short-wavelength continuous 300-K photopumped AlxGa1-xAs-GaAs quantum well heterostructure laser Appl. Phys. Lett. 40 18–19 (1982)
Morkoc, H., Drummond, T.J., Fischer, R. Interfacial properties of (Al, Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxy J. Appl. Phys. 53 1030–1033 (1982)
Morkoc, H., Drummond, T.J., Fischer, R., Cho, A.Y. Moderate mobility enhancement in single period AlxGa1-xAs/GaAs heterojunctions with GaAs on top J. Appl. Phys. 53 3321–3323 (1982)
Morkoc, H., Drummond, T.J., Kopp, W., Fischer, R. Influence of substrate temperature on morphology of AlxGal-xAs grown by molecular beam epitaxy J. Electrochem. Soc. 129 824–826 (1982)
Morkoc, H., Drummond, T.J-, Omori, M. GaAs MESFET’s by molecular beam epitaxy IEEE Trans. Electron Devices ED-29 222–224 (1982)
Morkoc, H-, Holonyak, N., Jr., Drummond, T.J., Camras, M.D., Fischer, R A1(x)Ga(1-x) As/GaAs quantum well heterojunction lasers grown by molecular beam epitaxy Proc. SPIE - Int. Soc. Opt. Eng. 323 13–16 (1982)
Morkoc, H., Kopp, W., Drummond, T.J., Su, S.L., Thorne, R.E., Fischer, R., Wang, T. Submicron gate GaAs/Al0.3GaO.7AS MESFETs with exremely sharp interfaces (40A) IEEE Trans. Electron Devices ED-29 1013–1018 (1982)
Morkoc, H., Stamberg, R., Krikorian, E Whisker growth during epitaxy of GaAs by molecular beam epitaxy Jpn. J. Appl. Phys. 21 L230–L232 (1982)
Munoz-Yague, A., Baceiredo, S. Ge incorporation in GaAs grown by molecular beam epitaxys A thermodynamic study J. Electrochem. Soc. 129 2108–2113 (1982)
Muro, K., Narita, S., Hiyamizu, S., Nanbu, K., Hashimoto, H. Far-infrared cyclotron resonance of two-dimensional electrons in an Al(x)Ga(1-x)As/GaAs heterojunction Surf. Sci. 113 321–325 (1982)
Murschal1, R., Gant, H., Moench, W. Low-energy electron energy-loss spectroscopy with GesGaAs(110) heterostructures Solid State Commun. 42 787–791 (1982)
Naganuma, M., Suzuki, Y., Okamoto, H. Photoluminescence of GaSb-AlSb super1attices grown by MBE Inst. Phys. Conf. Ser. 63 125–130 (1982)
Narita, S., Takeyama, S., Luo, W., Hiyamizu, S., Nanbu, K., Hashimoto, H. Quantum galvanomagnetic properties of two-dimensional electron gas in AlxGal-xAs/GaAs heterojunction FET in strong magnetic fields Surf. Sci. 113 301–305 (1982)
Nathan, M.I., Heiblum, M. An improved AuGe ohmic contact to n-GaAs Solid-State Electron. 25 1063–1065 (1982)
Noreika, A.J., Takei, W.J., Francombe, M.H., Wood, C.E.C. Indium antimonide-bismuth compositions grown by molecular beam epitaxy J. Appl. Phys. 53 4932–4937 (1982)
Noreika, A.J., Takei, W.J., Francombe, M.H., Wood, C. E. Cm Structure and electrical properties of HBE-grown In-Sb based compositions Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 161–164 (1982)
Norrman, S.H., Andersson, T.G., Svensson, S.P., Flemming, K.E. Highly stabilised evaporation sources in a water-cooled carousel housing J. Phys. E 15 731–735 (1982)
O’Clock, G.D., Jr., Erickson, L.P. R Impact of molecular beam epitaxy on millimeter wave and optical systems Proc. SPIE - Int. Soc. Opt. Eng. 317 268–274 (1982)
CP Connel1, R.F. R Two dimensional systems in solid state and surface physicss strong electric and magnetic fields effects J. Physique 43, Colloque C2 C2/81–C2/96 (1982)
O’Connor, P., Pearsal1, T.P., Cheng, K.Y., Cho, A.Y., Hwang, J.C.M., Alavi, K. In0.53Ga0.47As FET’s with insulator-assisted Schottky gates IEEE Electron. Device Lett. EDL-3 64–66 (1982)
Ogura, M., Yao, T., Hata, T. T Surface emitting laser diode with multilayered heterostructure reflectors Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 69–72 (1982)
Ohno, H., Barnard, J.A. R Field-effect transistors in “GaInAsP Alloy Semi conductors”, Ed. T.P. Pearsal (Wiley, Chichester, UK, 1982) 437–455 (1982)
Ohno, H., Sakaki, H. Tangential magnetoresistance of two-dimensional electron gas at a selectively doped n-GaAlAs/GaAs heterojunction interface grown by molecular beam epitaxy Appl. Phys. Lett. 40 893–895 (1982)
Ohno, H., Sakaki, H. Tangential magnetoresistivity of two dimensional electron gas at a selectively doped n-GaAsAs/GaAs heterojunction Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 135–138 (1982)
Okamoto, K., Wood, C.E.C., Rathbun, L., Eastman, L.F. Oxygen stabilization of molecular beam epitaxial Al-GaAs Schottky barrier heights J. Appl. Phys. 53 4521–4523 (1982)
Okamoto, K., Wood, C.E.C., Rathbun, L Eastman, L.F. Instabilities in the growth of AlxGa(1-x)As/Al/AlyGa(1-y)As structures molecular beam epitaxy J. Appl. Phys. 53 1532–1535 (1982)
O1ego, D., Chang, T.Y., Si 1berg, E., Caridi, E.A., Pinczuk, A. Compositional dependence of band-gap energy and conduction-band effective mass of In(1-x-y)Ga(x)Al(y)As lattice matched to InP Appl. Phys. Lett. 41 476–478 (1982)
Olego, D., Pinczuk, A., Gossard, A.C., Wiegmann, W. Plasma dispersion in a layered electron gass A determination in GaAs-(AlGa)As heterostructures Phys. Rev. B 25 7867–7870 (1982)
Olego, D., Pinczuk, A., Gossard, A.C., Wiegmann, W. Plasma dispersion in a layered electron gass a determination in GaAs-(AlGa)As heterostructures Phys. Rev. B 25 7867–7870 (1982)
Ono, Y. Self-consistent treatment of dynamical diffusion coefficient of two dimensional random electron system under strong magnetic fields J. Phys. Soc. Jpn. 51 3544–3552 (1982)
Ono, Y. Energy dependence of localization length of two-dimensional electron system moving in a random potential under strong magnetic fields J. Phys. Soc. Jpn. 51 2055–2056 (1982)
Ono, Y. T A calculation of two-dimensional Hall conductivity under strong magnetic fields - Wigner representati on in “Anderson Localization”, Eds- Y- Nagaoka and H. Fukuyama, Springer Ser. Solid-State Sci. Vol. 39 207–215 (1982)
Faalanen, M.A., Tsui, D.C., Gossard, A.C. Quantized Hall effect at low temperatures Phys- Rev. B25 5566–5569 (1982)
Palmier, J.F., Chomette, A. T Phonon-1imited near equilibrium transport in a semiconductor superlattice J. Physique 43 381–391 (1982)
Parker, E.H.C., King, R.M. R New channels for microchips New Sci. 96 No. 1327 105–108 (1982)
Petroff, P.M., Cho, A.Y., Reinhart, F.K., Gossard, A.C., Wiegmann, W. Alloy clustering in Gal-xAlxAs compound semi conductors grown by molecular beam epitaxy Phys. Rev. Lett. 48 170–173 (1982)
Petroff, P.M., Gossard, A.C., Logan, R.A., Wiegmann, W. Toward quantum well wires: Fabrication and optical properties Appl. Phys. Lett. 41 635–638 (1982)
Pinczuk, A., Worlock, J.M. R Light scattering by two-dimensional electron systems in semiconductors Surf. Sci. 113 69–84 (1982)
Ploog, K. R Molecular beam epitaxy of III-V compounds: application of MBE-grown films Ann. Rev. Mater. Sci. 12 123–148 (1982)
Ploog, K. R GaAs doping super1attices - a new class of semi conductor materials grown by molecular beam epitaxy Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 17–20 (1982)
Ploog, K., Kuenzel, H. R Growth and properties of new artificial doping super1attices in GaAs Microelectron. J. 13 No. 3 5–22 (1982)
Ploog, K.f Kuenzel, H., Collins, D.M. Comment on “A photoluminescence study of
Beryllium-doped GaAs grown by molecular beam epitaxy J. Appl. Phys. 53 6467–6468 (1982)
Portal, J.C., Nicholas, R.J., Brummell, M.A., Cho, A.Y., Cheng, K.Y., Pearsall, T. P. Quantum transport in GaInAs-AlInAs heterojunctions, and the influence of intersubband scattering Solid State Commun. 43 907–911 (1982)
Prange, R.E., Joynt, R. T Conduction in a strong field in two dimensions: the quantum Hall effect Phys. Rev. B 25 2945–2946 (1982)
Price, G.L. Preservation and regeneration of an MBE grown surface Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 259–262 (1982)
Price, P.J. TR Electron transport in polar heterolayers Surf. Sci. 113 199–210 (1982)
Price, P.J. T Hot electrons in GaAs heterolayer at low temperature J. Appl. Phys. 53 6863–6866 (1982)
Quinn, J.J., McCombe, B.D. R The IVth international conference on the electronic properties of two-dimensional systems (EP2DS-IV) Comments Solid State Phys. 10 139–154 (1982)
Reich, R.K., Ferry, D.K. T Moment equations in the Wigner formulation for superlattice band structures Phys. Lett. A 91 31–32 (1982)
Reich, R.K., Grondin, R.O., Ferry, D.K., Iafrate, G.J. T Transport in surface superlattices Phys. Lett. A 91 28 - 30 (1982)
Reich, R.K., Grondin, R.O., Ferry, D.K., Iafrate, G.J. T The Bloch-FET - a lateral surface superlattice device IEEE Electron Device Lett. EDL-3 381–383 (1982)
Ridley, B.K. T The electron-phonon interaction in quasi-two-dimensional semi conductor quantum-well structures J. Phys. C 15 5899–5917 (1982)
Ploog, K.f Kuenzel, H.9 Collins, D.M. Comment on “A photoluminescence study of beryllium-doped GaAs grown by molecular beam epi taxy” J. Appl. Phys. 53 6467–6468 (1982)
Portal, J.C., Nicholas, R.J., Brummel19M.A.9 Cho, A.Y., Cheng, K.Y., Pearsal1, T. P. Quantum transport in GalnAs-AlInAs heterojunctions, and the influence of intersubband scattering Solid State Commun. 43 907–911 (1982)
Prange, R.E., Joynt, R. T Conduction in a strong field in two dimensions: the quantum Hall effect Phys. Rev. B 25 2945–2946 (1982)
Price, G.L. Preservation and regeneration of an MBE grown surface Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 259–262 (1982)
Price, P.J. TR Electron transport in polar heterolayers Surf. Sci. 113 199–210 (1982)
Price, P.J. T Hot electrons in GaAs heterolayer at low temperature J. Appl. Phys. 53 6863–6866 (1982)
Quinn, J.J., McCombe, B.D. R The IVth international conference on the electronic properties of two-dimensional systems (EP2DS-IV) Comments Solid State Phys. 10 139–154 (1982)
Reich, R.K.9 Ferry, D.K. T Moment equations in the Wigner formulation for superlattice band structures Phys. Lett. A 91 31–32 (1982)
Reich, R.K., Grondin, R.0., Ferry, D.K., Iafrate, G.J. T Transport in surface superIattices Phys. Lett. A 91 28–30 (1982)
Reich, R.K., Grondin, R.0., Ferry, D.K., Iafrate, G.J. T The Bloch-FET - a lateral surface superlattice device IEEE Electron Device Lett. EDL-3 381–383 (1982)
Ridley, B.K. T The electron-phonon interaction in quasi-two-dimensional semi conductor quantum-well structures J. Phys. C 15 5899–5917 (1982)
Rocket, A., Drummond, T.J., Greene, J.E., Morkoc, H Surface segregation model for Sn-doped GaAs grown by molecular beam epitaxy J. Appl. Phys. 53 7085–7087 (1982)
Sakaki, H. Physical limits and applications of extremely high electron mobility effects in ultrafine semiconductor wire (USW) structures Inst- Phys- Conf- Ser- 62 251–256 (1982)
Sakaki, H. Velocity-modulation transistor (VMT) - a new field-effect transistor concept Jpn. J. Appl. Phys. 21 L381–L383 (1982) 1085
Sakamoto, T. Moving toward future electron devices JEE, J. Electron. Eng. 19 No. 7 28–31 (1982)
Sanchez-Dehesa, J., Tejedor, C. Self-consistent calculation of properties of GaAs-AlAs superlattices with homopolar interfaces Phys. Rev. B 26 5824–5831 (1982)
Sauvage, Ii., Massi es, J. Characterization of MBE grown silver layers on (001)GaAs surfaces by synchrotron radiation plane wave techniques J. Cryst. Growth 59 605–615 (1982)
Scott, G.B., Dobson, P.J., Duggan, G., Dawson, P. Reply to “Comment on’ A photoluminescence study of beryllium-doped GaAs grown by molecular beam epitaxy’” J. Appl. Phys. 53 6469–6470 (1982)
Sekiguchi, Y., Sakaki, H., Tanoue, T., Hotta, T., Ohno, H. Transport properties of electrons at n-AlGaAs/GaAs heterojunction interface and their dependence on GaAs buffer-layer thickness and substrates Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 139–142 (1982)
Shank, C.V., Fork, R.L., Greene, B.I., Weisbuch, C., Gossard, A.C. Picosecond dynamics of highly excited multiquantum well structures Surf. Sci. 113 108–111 (1982)
Shmelev, G.M., Enaki, N.A. T Conductivity of a superlattice during electron scattering by optical phonons Sov. Phys. Journal 25 78–91
Shmelev, G.M., Enaki, N.A. T Conductivity of a superlattice during electron scattering by optical phonons Izv. Vyssh. Zaved., Fiz., 25 81–84 (1982)
Singh,. Madhukar, A. T Monte Carlo simulation of the growth of A ( 1 -x) B ( x) layers on lattice matched substrates in molecular beam epitaxy J. Vac. Sci. Technol. 20 716–719 (1982)
Smith, R.S., Ganser, P.M., Ennen, H. Selenium doping of molecular beam epitaxial GaAs using SnSe2 J. Appl. Phys. 53 9210–9211 (1982)
Spicer, W.E., Eglash, S. J., Skeath, P., Mahowald, P., Lindau, I., Pan, S., Mo, D., Collins, D.M. R Surface and interface electronic structure and Schottky barriers Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 269–278 (1982)
Stagg, J.P., Hulyer, P.J., Foxon, C.T., Ashenford, D. Optimisation of Sn doping in GaAlAs/GaAs DH lasers grown by MBE J. Physique 43 Colloque C5 C5/377–C5/384 (1982)
Stoermer, H.L., Gossard, A.C., Wiegmann, W. Observation of intersubband scattering in a 2-dimensional electron system Solid State Commun. 41 707–709 (1982)
Stoermer, H.L., Tsui, D.C., Gossard, A.C. R Zero resistance state and origin of the quantized Hall effect in two-dimensional electron systems Surf. Sci. 113 32–38 (1982)
Streda, P. T Theory of quantised Hall conductivity in two dimensions J. Phys. C 15 L717–L721 (1982)
Streda, P. T Quantised Hall effect in a two-dimensional periodic potential J. Phys. C 15 L1299–L1303 (1982)
Su, S.L., Fischer, R., Drummond, T.J., Lyons, W.G., Thorne, R.E., Kopp, W., Morkoc, H. Modulation-doped (Al, 6a)As/GaAs FETs with high ransconductance and electron velocity Electron. Lett. 18 794–796 (1982)
Su, S.L., Thorne, R.E., Fischer, R., Lyons, W.G., H. Influence of buffer thickness on the performance of Ga As field effect transistors prepared by molecular beam epitaxy J. Vac. Sci. Technol. 21 961–964 (1982)
Sugahara, T., Wada, O., Fujii, T., Hiyamizu, S., Sakurai, T. Monolithic 1x4 array of uniform radiance AlGaAs-GaAs LEDs grown by molecular beam epitaxy Jpn. J. Appl. Phys. 21 L349–L350 (1982)
Sugai,S., Harris, J.H., Nurmikko, A.V. Strong electron-phonon interaction effects in modulated transient reflectance spectra of Ga(0.50)In(0.50) P Solid State Commun. 43 913–916 (1982)
Sugiura, H., Yamaguchi, M., Yamamoto, A., Shibukawa, A., Uemura, C. ESCA studies of InP substrate surface thermally cleaned under arsenic molecular beam exposure for MBE growth Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 255–258 (1982)
Sugiyama, K. Molecular beam epitaxy of InSb films on CdTe J. Cryst. Growth 60 450–452 (1982)
Sullivan, P.W., Farrow, R.F.C., Jones, G.R. Insulating epitaxial films of BaF2, CaF2, and Ba(x)Ca(1-x)F2 grown by MBE on InP substrates J. Cryst. Growth 60 403–413 (1982)
Sun, D.C., Sakaki, H., Ohno, H., Sekiguchi, Y., Tanoue, T. Stabi1ization of Schottky barrier properties of single-crystal Al/GaAs and Al/AlGaAs/GaAs contacts prepared by molecular beam epitaxy Inst. Phys. Conf. Ser. 63 311–316 (1982)
Suzuki, Y., Okamoto, H. Refractive index of Ga As Al As superlatice grown by MBE collected papers of MBE CST 2, Ed. R., Ueda (Jpan. Phys., Tokyo 1982) 51–54
Swaminathan, V., Zi1ko, J.L., Tsang, W.T., Wagner, W.R. Photolumiscence study of acceptors in Al(x)Ga(1-x)As J. Appl. Phys. 53 5163–5168 (1982)
Tabatabaie-Alavi, K., Choudhury, A.N.M.M., Alavi, K., Vlcek, J., Slater, N.J., Fonstad, C.G., Cho, A.Y. Ion-implanted In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As lateral PNP transistors IEEE Electron Device Lett. EDL-3 379–381 (1982)
Tabatabaie-Alavi, K., Choudhury, A.N.M.M., Alavi, K., Vlcek, J., Slater, N.J., Fonstad, C.G., Cho, A.Y. (In, Ga)As/(In, Al, )As heterojunction lateral pnp transistors IEDM 82 Technical Digest 766–769 (1982)
Tacano, M., Sugiyama, Y., Ogura, M., Kawashima, M. Fabrication of super-Schottky diode by MBE growth and subsequent metal deposition Collected Papers of MBE-CST-2, Ed- R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982 ) 125–128 (1982)
Takeda, Y., Kamei, H., Sasaki, A. T Mobility calculation of two-dimensional electron gas in GaAs/AlGaAs heterostructure at 4.2 K Electron. Lett. 18 309–311 (1982)
Tanoue, T., Sakaki, H. Long-1ifetime photoconductivity in selectively doped n-AlGaAs/GaAs heterostructures Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 143–146 (1982)
Tanoue, T., Sakaki, H. T A new method to control impact ionization rate ratio by spatial separation of avalanching carriers in multi1ayered heterostructures Appl. Phys. 41 67–69 (1982)
Tarng, S.s., Tia, K., Jewell, J. L., Gibbs, H. M., Gossard A. C., Mccall, S. L., Passner, A., Venkatesen T. N. C., Wiegmann, W. External off and on switching of bistable optical device. Appl. Phys. Lett. 40 205–207 (1982)
Tarucha, S., Ishibashi, T., Okamoto, H. Spontaneous and Stimulated photoluminescene properties of Ga As A1 (x) Ga (1-x) As multi-quantum-well heterostructures Collected Papers of MBE-CST-2, R. Ueda (Jpn. Soc. Appl. Phys. Tokyo, 1982) 43–46 (1982)
Thorne, R. E., Drummond, T.J., Lyons, W.g., Fischer, R., Morkoc, H. An explanation for anomalous donor activation energies in Al (0.35) Ga (0.55) As Appl. Phys. Lett. 41 198–191 (1982)
Thorne, R. E., Fischer, R., Su, S.L., Kopp, W., Drummond, t.J., Morkoc, H. Performance of inverted structure modulation doped Schottky barrier field effect transistor Jpn. J. Appl. Phys. 21 L223–224
Thorne, R.E., Su, S.L., Kopp, W., Fischer, R., Drummond, T-J., Morkoc, H. Normally-on and normally-off camel diode gate GaAs field effect transistors for large scale integration J. Appl. Phys. 53 5951–5958 (1982)
Thouless, D.J. T Localization in a strong magnetic field in “Anderson Localization”, Eds. Y. Nagaoka and H. Fukuyama, Springer Ser. Solid-State Sci. Vol. 39 191–197 (1982)
Thouless, D.J., Kohmoto, M., Nightingale, M.F., Nijs, M. den T Quantized Hall conductance in a two-dimensional periodic potential Phys. Rev. Lett. 49 405–408 (1982)
Tien, Z.J., Perry, C-H-, Worlock, J.M-, Pinczuk, A., Aggarwal, R. Resonant Raman scattering from electrons in gallium arsenide-aluminium gallium arsenide heterostructures in high magnetic fields Proc. 8th Int. Conf. Raman Spectrosc., Eds. J. Lascombe and P.V. Huong (Wiley, Chichester, UK, 1982) 441–442 (1982)
Tien, Z.J., Worlock, J.M., Perry, C.H., Pinczuk, A., Aggarwal, R.L., Stoermer, H.L., Gossard, A.C., Wiegmann, W. Light scattering from two-dimensional electron systems in strong magnetic fields Surf. Sci. 113 89–93 (1982)
Tsang, W.T. R Recent progress in growing reliable (AlGa)As DH lasers by molecular beam epitaxy for optical communication systems J. Cryst. Growth 56 464–474 (1982)
Tsang, W.T. Extremely low threshold (AlGa)As graded-index waveguide separate-confirmement heterostructure lasers grown by molecular beam epitaxy Appl. Phys. Lett. 40 217–219 (1982)
Tsang, W.T. R Recent developments in MBE lasers and photodetectors Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 75–79 (1982)
Tsang, W.T. R Novel optoelectronic devices prepared by molecular beam epitaxy Proc. SPIE - Int. Soc. Opt. Eng. 317 66–73 (1982)
Tsang, W.T., Logan, R.A. (AlGa)As strip buried-heterostructure lasers prepared by hybrid crystal growth Electron- Lett- 18 397–398 (1982)
Tsang, W.T., Logan, R.A., Ditzenberger, J.A. Stripe-geometry laser with in-situ ohmic contact and self-aligned native surface oxide mask for current isolation prepared by molecular beam epitaxy Electron. Lett. 18 123–124 (1982)
Tsang, W.T., Miller, R.C., Capasso, F., Bonner, W.A. High quality InP grown by molecular beam epitaxy Appl. Phys. Lett. 41 467–469 (1982)
Tsang, W.T., Reinhart, F.K., Ditzenberger, J.A. 1.3 um wavelength GalnAsP/InP double heterostructure lasers grown by molecular beam epitaxy Appl. Phys. Lett. 41 1094–1096 (1982)
Tsang, W.T., Reinhart, F.K., Ditzenberger, J.A. Molecular-beam epitaxially grown 1.3um GalnAsP/InP double-heterostructure lasers Electron. Lett. 18 785–786 (1982)
Tsui, D.C., Gossard, A.C., Field, B.F., Cage, M.E., Dziuba, R.F. Determination of the fine-structure constant using GaAs-AlxGal-xAs heterostructures Phys. Rev. Lett. 48 3–6 (1982)
Tsui, D.C., Stoermer, H.L., Gossard, A.C. Two-dimensional magnetotransport in the extreme quantum limit Phys. Rev. Lett. 48 1559–1561 (1982)
Tsui, D.C., Stoermer, H.L., Gossard, A.C. Zero-resistance state of two-dimensional electrons in a quantizing magnetic field Phys. Rev. B25 1405–1407 (1982)
Tung, P.N., Delagebeaudeuf, D., Laviron, M., Delescluse, P., Chaplart, J., Linh, N.T. High-speed two-dimensional electron-gas FET logic Electron. Lett. 18 109–110 (1982)
Tung, P. N., Deleslecluse, P., Delagebeaudeuf, D., Laviron, M., Chaplart, J., Linh, N.T. High-Speed low-power DCFL using planar two dimensional electron gas FET echnology Electron. Lett. 18 517–519 (1982)
Vechten, J.A. van T Intermixing of an AlAs-GaAs super1attice by In diffusion J. Appl. Phys. 53 7082–7084 (1982)
Veen, J.F. van der, Smit, L., Larsen, P.K., Electronic structure of Pb on GaAs(001) J. Vac. Sci. Technol. 21 375–379 (1982)
Vitlina, R.Z., Chaplik, A.V. T Nonequi1ibriurn plasmons in a two-dimensional electron gas Sov. Phys. JETP 56 839 - 842
Vitlina, R.Z., Chaplik, A.V. T Nonequi1ibriurn plasmons in a two-dimensional electron gas Zh. Eksp. Teor. Fiz. 83 1457–1463 (1982)
Vodjdani, N., Lemarchand, A., Paradan, H. Parametric studies of GaAs growth by metal organic molecular beam epitaxy J. Physique 43 Colloque C5 C5/339–C5/349 (1982)
Voos, M. R Far-infrared magneto-absorption in InAs-GaSb superlattices Surf. Sci. 113 94–101 (1982)
Wada, O., Sanada, T., Sakurai, T. Monolithic integration of an AlGaAs/GaAs DH LED with a GaAs FET driver IEEE Electron Device Lett. EDL-3 305–307 (1982)
Wagner, W.R., Cho, A.Y. Al(0.3)Ga(0.7)P(0.01)As(0.99)GaAs laser heterostructures grown by molecular beam epitaxy J. Appl. Phys. 53 6032–6036 (1982)
Wang, S.Y., Bloom, D.M., Collins, D.M. GaAs Schottky photodiode with 3 dB bandwidth of 20 GHz IEDM 82 Technical Digest 521–524 (1982)
Wang, W.I. Mobility enhancement in modulation-doped GaAs/AlAs heterostructures grown by molecular beam epitaxy Appl. Phys. Lett. 41 540–542 (1982)
White, S.R., Margues, G.E., Sham, L.J. T Effective-mass theory for electrons in heterostructures J. Vac. Sci. Technol. 21 544–547 (1982)
Wicks, G.W. R Thin film growth by molecular beam epitaxy Opt. Eng. 346 19–24 (1982)
Williams, G.F., Capasso, F., Tsang, W.T. T The graded bandgap multilayer avalanche photodiodes a new low-noise detector IEEE Electron Device Lett. ED2-3 71–73 (1982)
Williams, R.S., Paine, B.M., Schaffer, W.J., Kowalczyk, S.P. Channeling measurements of lattice disorder at the GaAs-InAs (100) heterojuncti on J. Vac. Sci. Technol. 21 386–388 (1982)
Wood, C.E.C. MBE doping processes. A review of current understanding Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 153–159 (1982)
Wood, C.E.C. Molecular beam epitaxy for microwave field effect transitors in “GaAs FET Principles and Technology” Eds. J.V. DiLorenzo and D.D.Khandelwal (Artech House, Dedham, Mass., 1982) 101–114 (1982)
Wood, C.E.C. III-V alloy growth by molecular beam epitaxy in “GalnAs Alloy Semiconductors” Ed. T.P.Pearsall (Wiley, Chichester, UK, 1982) 87–106 (1982)
Wood, C.E.C., DeSi(iione, D., Singer, K., Wicks, G. W. Magnesium- and calcium-doping behavior in molecular-beam epitaxial III-V compounds J. Appl. Phys. 53 4230–4235 (1982)
Wood, C.E.C., Eastman, L.F., Board, K., Singer, K., Malik, R. J. Regenerative switching device using MBE-grown gallium arsenide Electron. Lett. 18 676–677 (1982)
Wood, C.E.C., Morgan, D.V., Rathbun, L. Molecular-beam epitaxial group III arsenide alloys Effect of substrate temperature on composition J. Appl. Phys. 53 4524–4526 (1982)
Woodbridge, K., Gowers, J.P., Joyce, B.A. Structural properties and composition control of GaAs(y)P(1-y) grown by MBE on VPE GaAs(0.63)P(0.37) substrates J. Cryst. Growth 60 21–28 (1982)
Worlock, J.M. Electrons in novel two-dimensional structures Nature 297 360–361 (1982)
Wright, S.L., Inada, M., Kroemer, H. Polar-on-nonpolar epitaxys Sublattice ordering in the nucleation and growth of GaP on Si(211) surfaces J. Vac. Sci. Technol. 21 534–539 (1982)
Wright, S.L.f Kroemer, H. phosphide source of P2 vapor in molecular beam epitaxy J. Vac. Sci. Technol. 20 143–148 (1982)
Xin, S.H., Schaff, W.J., Wood, C.E.C., Eastman, L.F. Capped versus capless heat treatment of molecular beam epitaxial GaAs Appl. Phys. Lett. 41 742–744 (1982)
Xin, S.H., Wood, C.E.C., DeSimone, D., Palmateer, S.C., Eastman, L.F. 1.40 eV emission band in GaAs Electron. Lett. 18 3–5 (1982)
Yamakoshi, S., Wada, O., Fujii., T., Hiyamizu, S., Sakurai, T. Ridge waveguide Ga Es/ Al Ga As DH lasers grown by MBE collected Papers of MBE-CST-2, R. Ueda (Jpn. Soc. Appl. Phys. Tokyo, 1982) 89–92 (1982)
Yamakoshi, S., Wada, O., Fujii, T., Hiyamizu, S., Sakurai, T. High performance ridge-waveguide AlGaAs/GaAs multi quantum-well lasers grown by molecular beam epitaxy IEDM 82 Technical Digest 342–345 (1982)
Yata, M., Niwa, K., Ueda, R. Growth kinetics of InSb thin films by Sb4 and In1 molecular beams Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 249–252 (1982)
Yoshida, S., Misawa, S., Gonda, S. Reactive molecular beam epitaxy of Al(x)Ga(1-x)N Collected Papers of MBE-CST-2, Ed. R. Ueda (Jpn. Soc. Appl. Phys., Tokyo, 1982) 165–168 (1982)
Yoshida, S., Misawa, S., Gonda, S. Properties of Al(x)Ga(1-x)N films prepared by reactive molecular beam epitaxy J. Appl. Phys. 53 6844–6848 (1982)
Zeller, C., Abstreiter, G., Ploog, K. The influence of temperature and incident light intensity on single particle and collective excitations in multilayer stuctures Surf. Sci. 113 85–88 (1982)
Zeller, C., Vinter, B., Abstreiter, B., Ploog, K. Quasi-two-dimensional photoexcited carriers in GaAs doping super1attices Phys. Rev. B 26 2124–2132 (1982)
Zhou, B.L., Ploog, K., Gmelin, E., Zheng, X.Q., Schulz, M. Assessment of persistent-photoconductivity centers in MBE grown Al (x) Ga (1-x) As using capacitance spectroscopy measurements Appl. Phys. A 28 223–227 (1982)
Ziel, J.P. van der, Tsang, W.T. Integrated multilayer GaAs lasers separated by tunnel junctions Appl. Phys. Lett. 41 499–501 (1982)
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1984 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Ploog, K., Graf, K. (1984). Subject Categories and References Year 1982. In: Molecular Beam Epitaxy of III–V Compounds. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-69580-3_14
Download citation
DOI: https://doi.org/10.1007/978-3-642-69580-3_14
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-13177-9
Online ISBN: 978-3-642-69580-3
eBook Packages: Springer Book Archive