Abstract
Gold films are extensively used in the production of both ohmic- and Schottky-type electrical contacts to semiconductors. Although their growth by vapour deposition has been extensively studied, much less is known of the stages which precede than those which follow nucleation. The pre-nucleation stages of the growth of gold films on clean and ordered as well as contaminated surfaces of silicon and gallium arsenide (GaAs) are the subject of the present review. It covers the interactions of submonolayer amounts of gold with semiconductor surfaces of these two types and subsequent film growth to a thickness of a few monolayers.
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Andersson, T.G. The initial growth of vapour deposited gold films. Gold Bull 15, 7–18 (1982). https://doi.org/10.1007/BF03216565
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DOI: https://doi.org/10.1007/BF03216565