Abstract
Mg-implanted layers (5 x 1014 to 5 x 1015 cm-2) which are annealed at low temperatures (500°C to 600°C) show high n-type conductivity. Contrary to the usual doping elements in silicon, the sheet carrier concentration shows a sharp decrease with increasing annealing temperatures; minimum sheet resistivities of 800 Q/a were obtained after a “thermal” annealing step at 550°C for 30 min. From profile measurements (Hall effect and SIMS), it is concluded that the interstitial solubility for Mg at 500°C in these samples is as high as 1 x 1018 cm-3. At temperatures above 700°C the electrically active Mg concentration is rapidly gettered by the damage layer and Mg precipitates., and becomes electrically inactive. A model for the segregation behavior of Mg in silicon is discussed briefly.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Similar content being viewed by others
References
R.K. Franks, J.B. Robertson: Sol. State Comm. 5, 479 (1967)
L.T. Ho, A.K. Ramadas: Phys. Rev. 35, 462 (1972)
H. Sigmund, R. Braungart. Ch. Höpff, D. Weift: Research Report NT 846 (1981) FRG
L.J. van der Pauw: Philips Res. Repts. 13, 1 (1958)
H. Ryssel, I. Ruge: Ionenimplantation, Stuttgart (1978), p. 33
R. Baron, G.A. Shifrin, O.J. Marsh, J.W. Mayer: J. Appl. Phys. 40, 3702 (1969)
H.H. Wieder, Characterisation of Epitaxial Semiconductor Films, ed. By H. Kressel, N.Y. (1976)
A. Manara, A. Ostidich, G. Pedroli, G. Restelli: Thin Solid Films 8, 359 (1971)
J.P. Biersack: Hahn-Meitner-Report, HMI-B334 (1980): projected ranges of the most common ion-target combinations are published in [5].
S.M. Sze, J.C. Irvin: Solid-State Electronics 11, 599 (1968)
H. Brooks: Advances in Electronics and Electron Physics, Vol 7. N.Y. (1955)
A. Seeger: phys. stat. sol.(a) 61, 521 (1980)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1983 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Sigmund, H., Weiß, D. (1983). Doping Behavior of Implanted Magnesium in Silicon. In: Ryssel, H., Glawischnig, H. (eds) Ion Implantation: Equipment and Techniques. Springer Series in Electrophysics, vol 11. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-69156-0_54
Download citation
DOI: https://doi.org/10.1007/978-3-642-69156-0_54
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-69158-4
Online ISBN: 978-3-642-69156-0
eBook Packages: Springer Book Archive