Abstract
The exact control of the scanned ion beam on the wafer is an important factor influencing the dose accuracy across the wafer, and must be checked carefully. In order to achieve uniformity of dopant concentration, the ratio of the scan line distance to the beam spot diameter for a Gaussian beam must be optimized.
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References
R. Badalec, H. Runge, J. Phys. E 12, 1146–7 (1979)
J.F. Gibbons, W.S. Johnson, S.W. Mylroie, Projected Range Statistics: Semiconductors and Related Materials, 2nd Edition, Halsted Press Stroudsbury, PA, USA (1975)
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© 1983 Springer-Verlag Berlin Heidelberg
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Hoepfner, J.D. (1983). Monitoring of X-Y-Scan Quality by Amorphization Contrast on Silicon Wafers. In: Ryssel, H., Glawischnig, H. (eds) Ion Implantation: Equipment and Techniques. Springer Series in Electrophysics, vol 11. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-69156-0_39
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DOI: https://doi.org/10.1007/978-3-642-69156-0_39
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