Abstract
The goal of non-electrical measurements in the field of ion implantation is to determine quantitative depth profiles of the total concentration of the implanted species, generally together with an evaluation of the damage produced by the ion bombardment. Thermal or beam annealing of implanted samples.results in a rearrangement of the impurity and host-material configuration via diffusion and lattice reconstruction. Following a short review of the analytical problems encountered in implantation work and the various measuring techniques, it is shown that secondary ion mass spectroscopy (SIMS) offers the most favorable solution for implantation-related studies if combined with complementary nuclear measurement techniques, especially neutron and high-energy ion beam analysis, which are of particular usefulness in the high-concentration range and in cases where interfaces are to be included in the analysis. Making use of the channeling effect, high-energy ions can also provide valuable information about lattice damage and incorporation of impurities on lattice sites, while for the classification of extended defects, X-ray topography and transmission electron microscopy (TEM) are indispensable tools.
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Eichinger, P., Ryssel, H. (1982). Non-Electrical Measuring Techniques. In: Ryssel, H., Glawischnig, H. (eds) Ion Implantation Techniques. Springer Series in Electrophysics, vol 10. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-68779-2_10
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DOI: https://doi.org/10.1007/978-3-642-68779-2_10
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