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CW CO2-laser annealing of arsenic implanted silicon

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Abstract

CW CO2-laser annealing of arsenic implanted silicon was investigated in comparison with thermal annealing. Ion channeling, ellipsometry, and Hall effect measurements were performed to characterize the annealed layers and a correlation among the different methods was made. The laser annealing was done with power densities of 100 to 640 W cm−2 for 1 to 20 s. It was found that the lattice disorder produced during implantation can be completely annealed out by laser annealing with a power density of 500 W cm−2 and the arsenic atoms are brought on lattice sites up to 96±2%. The maximum sheet carrier concentration of 6×1015 cm−2 was obtained for 1×1016 cm−2 implantation after laser annealing, which was up to 33% higher than that after thermal annealing at 600 to 900°C for 30 min.

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References

  1. E.I.Shtyrkov, I.B.Khaibullin, M.M.Zaripov, M.F.Galyatudinov, R.M.Bayazitov: Sov. Phys. Semicond.9, 1309 (1976) and references therein

    Google Scholar 

  2. G.A.Kachurin, E.V.Nidaev: Sov. Phys. Semicond.11, 350 (1977)

    Google Scholar 

  3. H.D.Geiler, G.Götz, K.D.Klinge, N.Triem: Phys. Stat. Sol. (a)41, K171 (1977)

    Article  Google Scholar 

  4. G.Foti, E.Rimini, G.Vitali, M.Bertolotti: Appl. Phys.14, 189 (1977)

    Article  ADS  Google Scholar 

  5. J.Krynicki, J.Suski, S.Ugniewski, R.Grötzschel, R.Klabes, V.Kreissig, J.Rüdiger: Phys. Lett.61A, 181 (1977)

    ADS  Google Scholar 

  6. R.T.Young, C.W.White, G.J.Clark, J.Narayan, W.H.Christie, M.Murakami, P.W.King, S.D.Kramer: Appl. Phys. Lett.32, 139 (1978)

    Article  ADS  Google Scholar 

  7. G.K.Celler, J.M.Poate, L.C.Kimerling: Appl. Phys. Lett.32, 464 (1978)

    Article  ADS  Google Scholar 

  8. P.Baeri, S.V.Campisano, G.Foti, E.Rimini: Appl. Phys. Lett.33, 137 (1978)

    Article  ADS  Google Scholar 

  9. A.Gat, J.F.Gibbons, T.J.Magee, J.Peng, V.R.Deline, P.Williams, C.A.Evans,Jr.: Appl. Phys. Lett.32, 276 (1978)

    Article  ADS  Google Scholar 

  10. D.H.Auston, J.A.Golovchenko, P.R.Smith, C.M.Surko, T.N.C.Venkatesan. Appl. Phys. Lett.33, 539 (1978)

    Article  ADS  Google Scholar 

  11. J.S.Williams, W.L.Brown, H.J.Leamy, J.M.Poate, J.W.Rodgers, D.Rousseau, G.A.Rozgonyi, J.A.Shelnutt, T.T.Sheng: Appl. Phys. Lett.33, 542 (1978)

    Article  ADS  Google Scholar 

  12. G.K.Celler, R.Brutta, W.L.Brown, J.M.Poate, G.A.Rozgonyi, T.T.Sheng:Proc. Laser-Solid Interactions and Laser Processing, ed. by S.D.Ferris, M.J.Leamy, J.M.Poate (AIP, New York, 1979) p. 381

    Google Scholar 

  13. M.Miyao, H.Tamura, K.Ohyu, T.Tokuyama:Proc. Laser-Solid Interactions and Laser Processing, ed. by S.D.Ferris, M.J.Leamy, J.M.Poate (AIP, New York, 1979) p. 325

    Google Scholar 

  14. M.Miyao, K.Ohyu, T.Tokuyama: Appl. Phys. Lett.35, 227 (1979)

    Article  ADS  Google Scholar 

  15. G.Bahir, T.Bernstein, R.Kalish: Appl. Phys. Lett.34, 486 (1979)

    Article  ADS  Google Scholar 

  16. M.Takai, H.Ryssel: Appl. Phys. Lett.35, 696 (1979)

    Article  ADS  Google Scholar 

  17. M.Takai, H.Ryssel:Proc. Symp. on Laser and Electron Beam Processing of Electronic Materials, Los Angeles (October 14–19, 1979) (to be published)

  18. B.C.Dobbs, W.J.Anderson, Y.S.Park: Appl. Phys. Lett.48, 5052 (1977)

    Google Scholar 

  19. K.Watanabe, M.Miyao, I.Takemoto, N.Hashimoto: Appl. Phys. Lett.34, 518 (1979)

    Article  ADS  Google Scholar 

  20. K.Nakamura, T.Gotoh, M.Kamoshida: J. Appl. Phys.50, 3985 (1979)

    Article  ADS  Google Scholar 

  21. See for example. H.Ryssel, I.Ruge:Ionen Implantation (B. G. Teubner, Stuttgart, 1978) Chap. 5

    Google Scholar 

  22. See for example. D.V.Morgan:Channeling: Theory, Observation and Applications (John Wiley, London, 1973)

    Google Scholar 

  23. L.Csepregi, E.F.Kennedy, S.S.Lau, J.W.Mayer, T.W.Sigmon: Appl. Phys. Lett.29, 645 (1976)

    Article  ADS  Google Scholar 

  24. L.Csepregi, E.F.Kennedy, J.W.Mayer, T.W.Sigmon: J. Appl. Phys.49, 3906 (1978)

    Article  ADS  Google Scholar 

  25. L.Csepregi, E.F.Kennedy, T.J.Gallapher, J.W.Mayer, T.W.Sigmon: J. Appl. Phys.48, 4234 (1977)

    Article  ADS  Google Scholar 

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Author notes

  1. P. H. Tsien

    Present address: Department of Electronic Engineering, Tsinghua University, Peking, China

  2. S. C. Tsou

    Present address: Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghal, China

Authors and Affiliations

  1. Fraunhofer-Institut für Festkörpertechnologie, Paul-Gerhardt-Allee 42, D-8000, München 60, Fed. Rep. Germany

    M. Takai, P. H. Tsien, S. C. Tsou, D. Röschenthaler, M. Ramin, H. Ryssel & I. Ruge

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Takai, M., Tsien, P.H., Tsou, S.C. et al. CW CO2-laser annealing of arsenic implanted silicon. Appl. Phys. 22, 129–136 (1980). https://doi.org/10.1007/BF00885995

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  • DOI: https://doi.org/10.1007/BF00885995

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