Abstract
A post-CMOS maskless dry etch process has been developed to fabricate MEMS structures compatible with commercial low-k copper interconnect processes. The micromachining in the copper low-k process enables the fabrication of an RF inductor with quality factor of 12 at 7.5 GHz and a variable capacitor operating up to 3 GHz. Reduction of fluorine concentration in the plasma for the low-k dielectric etch solves the metal delamination problems. Argon/oxygen plasma cleaning of fluorine residue from the copper surface greatly reduces the metal erosion when exposed to high humidity.
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Zhu, X., Santhanam, S., Lakdawala, H., Luo, H., Fedder, G.K. (2001). Copper Interconnect Low-K Dielectric Post-CMOS Micromachining. In: Obermeier, E. (eds) Transducers ’01 Eurosensors XV. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-59497-7_359
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DOI: https://doi.org/10.1007/978-3-642-59497-7_359
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