Abstract
The rapid rate of development of the electronics industry is predicated on aggressive scaling rules for robust transistor design. In particular, each successive reduction in the size of the silicon based field effect transistor requires further thinning of the oxide layer which separates the polysilicon gate electrode from the channel. For integrated circuits in production now, this gate oxide has a thickness well below 50 Å. In this thickness regime, which is only an order of magnitude away from typical bond distances, a characterization of the Si(001)-SiO2 interface at the atomic scale is of critical importance. Knowledge of the atomic structure at this interface is intimately related to the understanding of the atomistic mechanisms that govern the oxidation process. In particular, the oxidation process used to fabricate integrated circuits yields a nearly perfect interface between amorphous silica and the silicon substrate for reasons that are still not well understood.
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Pasquarello, A., Hybertsen, M.S., Car, R. (2001). Atomic Dynamics During Silicon Oxidation. In: Chabal, Y.J. (eds) Fundamental Aspects of Silicon Oxidation. Springer Series in Materials Science, vol 46. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-56711-7_6
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DOI: https://doi.org/10.1007/978-3-642-56711-7_6
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