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Non-Destructive Testing of Semiconductor Materials Using Microwave Photoconductivity

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Micro System Technologies 90
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Summary

For semiconductor research and production the ability to test and measure important parameters of materials and devices is highly desirable. The usual methods necessitate the formation of ohmic contacts and special test structures, which may not only change the parameters to be tested but may also cause damage and add contaminations. A convenient, non-contact method is presented which is capable of measuring the free carrier’s lifetime. The method is based on the measurement of reflected microwave power from the semiconductor after optical excitation.

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References

  1. M. Kunst and G. Beck; The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. J. Appl. Phys. 60, 3558 (1986).

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  2. M. Kunst, G. Müller, R. Schmidt and H. Wetzel: Surface and Volume Decay Processes in Semiconductors Studied by Contactless Transient Photoconductivity Measurements. Appl. Phys. A 46, 77 (1988).

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© 1990 Springer-Verlag Berlin Heidelberg

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Betz, G., Ploschies, R., Wolk, C., Winter, C., Valldorf, J. (1990). Non-Destructive Testing of Semiconductor Materials Using Microwave Photoconductivity. In: Reichl, H. (eds) Micro System Technologies 90. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-45678-7_27

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  • DOI: https://doi.org/10.1007/978-3-642-45678-7_27

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-45680-0

  • Online ISBN: 978-3-642-45678-7

  • eBook Packages: Springer Book Archive

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