Summary
For semiconductor research and production the ability to test and measure important parameters of materials and devices is highly desirable. The usual methods necessitate the formation of ohmic contacts and special test structures, which may not only change the parameters to be tested but may also cause damage and add contaminations. A convenient, non-contact method is presented which is capable of measuring the free carrier’s lifetime. The method is based on the measurement of reflected microwave power from the semiconductor after optical excitation.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
M. Kunst and G. Beck; The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. J. Appl. Phys. 60, 3558 (1986).
M. Kunst, G. Müller, R. Schmidt and H. Wetzel: Surface and Volume Decay Processes in Semiconductors Studied by Contactless Transient Photoconductivity Measurements. Appl. Phys. A 46, 77 (1988).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1990 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Betz, G., Ploschies, R., Wolk, C., Winter, C., Valldorf, J. (1990). Non-Destructive Testing of Semiconductor Materials Using Microwave Photoconductivity. In: Reichl, H. (eds) Micro System Technologies 90. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-45678-7_27
Download citation
DOI: https://doi.org/10.1007/978-3-642-45678-7_27
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-45680-0
Online ISBN: 978-3-642-45678-7
eBook Packages: Springer Book Archive