Abstract
The electron distribution in defects is based on widely different mechanisms such as creation of atomic lattice defects and their electronic defect levels, carrier redistribution over these defects, phonon relaxation, orientation relaxation, carrier-carrier scattering relaxation of momentum and energy, and electron spin relaxation. These changes can be initiated by changes in optical excitation yielding rise and decay of photoconductivity (reaction kinetics). The method of controlled excitation is introduced. Photoconductivity time constants are defined. Kinetics that is influenced by trap distributions are evaluated. Ultrafast photo detectors are described. Competing excitation processes are evaluated. Optical quenching is introduced. Orientation relaxation is discussed. The changes in thermal excitation, yielding glow curves and thermally stimulated currents are evaluated. The residence time of carriers in deep traps is tabulated. Changes in field ionization and field stimulated current curves are given.
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Notes
- 1.
R=Roentgen; 1 R is the amount of X-ray (or γ-ray) irradiation that produces 1 esu of charges (2.08⋅109 ions) per cm3 of air. Natural background radiation is 120 mR per year. Diagnostic single X-ray exposures lie between 50 and 500 mR per exposure. Skin reddening occurs near 500 R.
- 2.
This can be done by a preceding, incomplete glowcurve run, which proceeds from run to run to progressively higher temperatures, followed by cooling to the starting temperature for the following run.
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Böer, K.W. (2013). Kinetics of Electron Distribution in Defects. In: Handbook of the Physics of Thin-Film Solar Cells. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-36748-9_23
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