Abstract
In SRAM, read and write are fundamental operations. To ensure the correct operations, the stability analysis is indispensable. In this chapter, electrical stability analysis is explained. In Sect. 3.1, the SRAM operations, read and write, are explained. In this section, the read stability, static-noise margin SNM, and the write stability are described. In SRAM design, V th variation of transistors has critical influence on SRAM operation. In Sect. 3.2, the V th variation of MOSFETs and its effect to SRAM are described. The V th variations can be divided into local and global components. In this section, the effect of V th variation is made visible using V th window curve analysis. In Sect. 3.3, by means of the conventional SNM and write margin analysis on the SRAM cell characteristics, expanded mathematical analysis to obtain the V th curve is described. The analysis is instructive to see stable V th conditions visually to achieve high-yield SRAM. Furthermore, the proposed analysis referred to as the worst-vector method allows to derive the minimum operation voltage of the SRAM Macros (V ddmin).
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© 2011 Springer-Verlag Berlin Heidelberg
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Yamaoka, M., Tsukamoto, Y. (2011). Electrical Stability (Read and Write Operations). In: Ishibashi, K., Osada, K. (eds) Low Power and Reliable SRAM Memory Cell and Array Design. Springer Series in Advanced Microelectronics, vol 31. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-19568-6_3
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DOI: https://doi.org/10.1007/978-3-642-19568-6_3
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