Abstract
The reduction in the size of state-of-the-art semiconductors provides challenges for the characterisation of the doped regions during device development [1]. Off-axis electron holography is a promising TEM-based technique that can be used to provide 2D dopant maps with nm-scale resolution [2].
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References
International Technology Roadmap for Semiconductors, 2005 ed. http://public.itrs.net
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D. Cooper, R. Truche, P. Rivallin, J. Hartmann, F. Laugier, F. Bertin and A. Chabli. Appl. Phys. Lett. 91, 143501 (2007).
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Cooper, D., Truche, R., Clement, L., Pokrant, S., Chabli, A. (2008). Off-axis electron holography for the analysis of nm-scale semiconductor devices. In: Richter, S., Schwedt, A. (eds) EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85226-1_5
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DOI: https://doi.org/10.1007/978-3-540-85226-1_5
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