TEM study of quaternary InGaAsN/GaAs quantum well structures grown by molecular beam epitaxy

Remmele, T.; Albrecht, M.; Häusler, I.; Geelhaar, L.; Riechert, H.; Abu-Farsakh, H.; Neugebauer, J.

doi:10.1007/978-3-540-85226-1_42

T. Remmele²,
M. Albrecht²,
I. Häusler²,
L. Geelhaar³,
H. Riechert³,
H. Abu-Farsakh⁴ &
…
J. Neugebauer⁴

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Abstract

In this study we report on the compositional analysis of quaternary InGaAsN/GaAs quantum well (QW) structures based on transmission electron microscope (TEM) investigations accompanied by theoretical ab-initio calculations. The pronounced band gap bowing by adding nitrogen to GaAs allows to reach the telecommunication wavelength range around 1.3–1.55 µm while staying lattice matched to the GaAs substrate by incorporating In. A sample series of In_xGa_1−xAs_1−yN_y with different nominal concentrations of In and N in the range of x = 0.1 − 0.4 and y = 0.01 − 0.05, respectively, were grown by radio-frequency plasma assisted molecular beam epitaxy and has been investigated by TEM.

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Authors and Affiliations

Institut für Kristallzüchtung, Max-Born-Str. 2, D-12489, Berlin, Germany
T. Remmele, M. Albrecht & I. Häusler
Qimonda (formerly Infineon Technologies Corporate Research Photonics), Otto-Hahn-Ring 6, D-81730, München, Germany
L. Geelhaar & H. Riechert
Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, D-40237, Düsseldorf, Germany
H. Abu-Farsakh & J. Neugebauer

Authors

T. Remmele
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M. Albrecht
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I. Häusler
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L. Geelhaar
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H. Riechert
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H. Abu-Farsakh
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J. Neugebauer
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Editors and Affiliations

Central Facility for Electron Microscopy, RWTH Aachen, Ahornstr. 55, 52074, Aachen, Germany
Silvia Richter & Alexander Schwedt &

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Remmele, T. et al. (2008). TEM study of quaternary InGaAsN/GaAs quantum well structures grown by molecular beam epitaxy. In: Richter, S., Schwedt, A. (eds) EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85226-1_42

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DOI: https://doi.org/10.1007/978-3-540-85226-1_42
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-85225-4
Online ISBN: 978-3-540-85226-1
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