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Overgrowth of the Mn4Si7 phase on/around the hexagonal SiC and cubic MnSi impurity phases in the Mn4Si7/Si films

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EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany

Abstract

Structural and morphological analysis of Mn4Si7 films using the TEM/HRTEM/Electron diffraction/STEM/EDS modes in a FEI CM300UT FEG electron microscope was carried out in a FEI CM300UT FEG electron microscope in TEM/HRTEM/Electron diffraction/STEM/EDS mode. The images were recorded on a Gatan 797 slow scan CCD camera and processed with the Gatan Digital Micrograph 3.11.1 software, INCA (Oxford) and JEMS package [1].

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References

  1. P. Stadelmann, JEMS. http://cimewww.epfl.ch/. 2008.

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  2. C. Sürgers, M. Gajdzik, G. Fischer at al. Physical Review B 68 (2003), 174423.

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  3. We kindly acknowledge the help of CIME-EPFL to use the equipment and software.

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© 2008 Springer-Verlag Berlin Heidelberg

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Orekhov, A., Kamilov, T., Suvorova, E.I. (2008). Overgrowth of the Mn4Si7 phase on/around the hexagonal SiC and cubic MnSi impurity phases in the Mn4Si7/Si films. In: Richter, S., Schwedt, A. (eds) EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85226-1_16

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