Electron Holography on the charge modulated structure In₂O₃(ZnO)_m in comparison with DFT-calculations

Abstract

The structure - properties relation of modern materials requires fundamental understanding of the interaction between charge structure and relaxation processes e.g. induced by doping metal oxides. In this context, In₂O₃(ZnO)_m provides a well defined arrangement of ZnO -like domains influenced by intersecting layers with fully occupied In³⁺-ions and unoccupied metal sites. These layers are ordered periodically in a strictly alternating manner, with spacing controllable by the quantity m. An inversion of structural polarity of the domains [1] is forced by the octahedral coordination of In³⁺-ions in so-called inversion domain boundaries (IDB) (Figure 1).