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Topological Defects and Electronic Properties in Graphene

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Progress in Industrial Mathematics at ECMI 2006

Part of the book series: Mathematics in Industry ((TECMI,volume 12))

In this work we will focus on the effects produced by topological disorder on the electronic properties of a graphene plane. The presence of this type of disorder induces curvature in the samples of this material, making quite difficult the application of standard techniques of many-body quantum theory. Once we understand the nature of these defects, we can apply ideas belonging to quantum field theory in curved space-time and extract information on physical properties that can be measured experimentally.

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Cortijo, A., Vozmediano, M.A.H. (2008). Topological Defects and Electronic Properties in Graphene. In: Bonilla, L.L., Moscoso, M., Platero, G., Vega, J.M. (eds) Progress in Industrial Mathematics at ECMI 2006. Mathematics in Industry, vol 12. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-71992-2_75

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