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Part of the book series: NanoScience and Technology ((NANO))

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Abstract

Line-end cut process is used to create very fine metal wires in sub-14 nm technology. Cut patterns split regularly spaced line patterns into a number of wire segments, some of which become actual routing wires while the remainders are regarded as dummy . In sub-10 nm technology, cuts are smaller than optical resolution limit and a directed self-assembly lithography with multiple patterning (MP-DSAL) is a good candidate for their patterning. Cut optimization for MP-DSAL is addressed in this chapter. The optimization goal is to determine cut locations in such a way that cuts are grouped into manufacturable GPs, which are then assigned to one of the masks without MP coloring conflicts; minimizing wire extensions is also pursued in the process. The optimization problem is formulated as ILP and a fast heuristic algorithm is also presented.

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Correspondence to Seongbo Shim .

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Shim, S., Shin, Y. (2018). Cut Optimization. In: Physical Design and Mask Synthesis for Directed Self-Assembly Lithography. NanoScience and Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-76294-4_9

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