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Memristor Modeling

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Memristor-Based Nanoelectronic Computing Circuits and Architectures

Part of the book series: Emergence, Complexity and Computation ((ECC,volume 19))

Abstract

This chapter presents a SPICE-compatible device model of a voltage-controlled bipolar memristor which explains memristive behavior while primarily attributing the switching effect to an effective tunneling distance modulation. This model satisfies the desired memristive fingerprints and involves significantly low-complexity operation under an unlimited set of frequencies over a wide range of applied voltages. The SPICE simulation results are found in good qualitative and quantitative agreement with the theoretical formulation of the model. Also, the model represents well the complex switching behavior of memristor when fitted to other widely used published models. Therefore, it can be used to provide accurate enough circuit simulations for a wide range of memristor devices and voltage inputs, while it can be incorporated as a circuit element in any current computer-aided design work.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Democritus University of Thrace, Xanthi, Greece

    Ioannis Vourkas & Georgios Ch. Sirakoulis

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  1. Ioannis Vourkas
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  2. Georgios Ch. Sirakoulis
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Correspondence to Ioannis Vourkas .

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Vourkas, I., Sirakoulis, G.C. (2016). Memristor Modeling. In: Memristor-Based Nanoelectronic Computing Circuits and Architectures. Emergence, Complexity and Computation, vol 19. Springer, Cham. https://doi.org/10.1007/978-3-319-22647-7_2

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  • DOI: https://doi.org/10.1007/978-3-319-22647-7_2

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-22646-0

  • Online ISBN: 978-3-319-22647-7

  • eBook Packages: EngineeringEngineering (R0)

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