Abstract
A nanoscale double-gate MOSFET is simulated by using a subband model based on the maximum entropy principle (MEP).
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Acknowledgements
G.M. acknowledges the financial support by P.R.A., University of Calabria. V.R. acknowledges the financial support by P.R.A., University of Catania and the P.R.I.N. project 2010 “Kinetic and macroscopic models for particle transport in gases and semiconductors: analytical and computational aspects.”
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Camiola, V.D., Mascali, G., Romano, V. (2014). Simulation of Nanoscale Double-Gate MOSFETs. In: Fontes, M., Günther, M., Marheineke, N. (eds) Progress in Industrial Mathematics at ECMI 2012. Mathematics in Industry(), vol 19. Springer, Cham. https://doi.org/10.1007/978-3-319-05365-3_4
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DOI: https://doi.org/10.1007/978-3-319-05365-3_4
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