Abstract
A hydrodynamical model for the electron-phonon system in semiconductor is developed by closing the moment system arising from the coupled Boltzmann equations for electrons and phonons with the maximum entropy principle. Limiting models are obtained under appropriate scaling, and comparisons with the existing models of charge transport in semiconductors including the thermal effects of the crystal lattice are presented.
Similar content being viewed by others
References
Adler M.S.: Accurate calculations of the forward drop and power dissipation in thyristors. IEEE Trans. Electron. Devices ED-25, 16–22 (1979)
Albertoni, S., Cugiani, M.: Sul problema del cambiamento di variabili nella teoria delle distribuzioni. Il Nuovo Cimento, 8(11), 1 Novembre (1951)
Anile A.M., Romano V.: Non parabolic band transport in semiconductors: closure of the moment equations. Continuum Mech. Thermodyn. 11, 307–325 (1999)
Anile A.M., Romano V., Russo G.: Extended hydrodynamical model of carrier transport in semiconductors. SIAM J. Appl. Math. 61, 74 (2000)
Anile, A.M., Mascali, G., Romano, V.: Recent developments in hydrodynamical modeling of semiconductors (2003) 1:54. In: Mathematical Problems in Semiconductor Physics. Lecture Notes in Mathematics 1832, Springer (2003)
Chryssafis A., Love W.: A computer-aided analysis of one dimensional thermal transient in n-p-n power transistors. Solid-State-Electron. 22, 249–256 (1978)
Dreyer W.: Maximisation of the entropy in non-equilibrium. J. Phys. A: Math. Gen. 20, 6505 (1987)
Dreyer W., Struchtrup H.: Heat pulse experiment revisited. Continuum Mech. Thermodyn. 5, 3–50 (1993)
Galler M., Schurrer F.: A deterministic solution method for the coupled system of transport equations for the electrons and phonons in polar semiconductors. J. Phys. A: Math Gen. 37, 1479–1497 (2004)
Gaur S.P., Navon D.H.: Two-dimensional carrier flow in a transistor structure under nonisothermal conditions. IEEE Trans. Electron. Devices ED-23, 50–57 (1976)
Gurevich V.L.: Transport in phonon systems. North-Holland, Amsterdam (1986)
Holland, M.G.: Analysis of lattice thermal conductivity. Phys. Rev. 132(6), (1963)
Janes, E.T.: Information theory and statistical mechanics. Physical Review 106(4), (1957)
Jacoboni C., Reggiani L.: The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Rev. Mod. Phys. 55, 645 (1983)
Jou D., Casas-Vazquez J., Lebon G.: Extended Irreversible Thermodynamics. Springer, Berlin (1993)
La Rosa S., Romano V.: MEP Hydrodynamical Model for Holes in Silicon Semiconductors: the case of the warped bands. J. Phys. A: Math. Theor. 41, 215103 (2008)
Levermore C.D.: Moment closure hierarchies for kinetic theories. J. Stat. Phys. 83, 1021 (1996)
Mascali G., Romano V.: Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle. Continuum Mech. Thermodyn. 14, 405 (2002)
Mascali G., Sellier J.M., Romano V.: MEP parabolic hydrodynamical model for holes in silicon semiconductors. Il Nuovo Cimento 120B, 197–215 (2005)
Mascali G., Romano V.: Si and GaAs mobility derived from a hydrodynamical model for semiconductors based on the maximum entropy principle. Physica A 352, 459–476 (2005)
Müller I., Ruggeri T.: Rational Extended Thermodynamics. Springer, Berlin (1998)
Peierls R.: Zur Kinetischen Theorie der Wärmeleitung in Kristallen. Ann. Phys. 3, 1055 (1929)
Romano V.: Non parabolic band transport in semiconductors: closure of the production terms in the moment equations. Continuum Mech. Thermodyn. 12, 31–51 (2000)
Romano V.: Non parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices. Math. Methods Appl. Sci. 24, 439 (2001)
Shannon, C.E.: Bell system tech. J. 27: 379, 623, also reprinted. In: Shannon, C.E., Weaver, W. (eds) The Mathematical Theory of Communication. University of Illinois Press, Urbana (1949)
Selberherr S.: Analysis and simulation of semiconductor devices. Springer, Wien (1984)
Sharma D.K., Ramanthan K.V.: Modeling thermal effetcs on MOS I-V characteristics. IEEE Electron. Device Lett. EDL-4, 362–364 (1983)
Wachuka G.: Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling. IEEE Trans. Comput. Aided Design 9, 1141–1149 (1990)
Wu N.: The Maximum Entropy Method. Springer, Berlin (1997)
Ziman J.M.: Electrons and Phonons. Clarendon, Oxford (2001)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Romano, V., Zwierz, M. Electron-phonon hydrodynamical model for semiconductors. Z. Angew. Math. Phys. 61, 1111–1131 (2010). https://doi.org/10.1007/s00033-010-0089-9
Received:
Revised:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00033-010-0089-9
Mathematics Subject Classification (2000)
- 82-80 Statistical mechanics
- Structure of matter-computational methods
- 82c40 Kinetic theory ofgases
- 82c70 Transport processes
- 82d37 Semiconductors