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Focused Ion Beam-Assisted Nanoscale Processing and Thermoelectrical Characterization

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FIB Nanostructures

Part of the book series: Lecture Notes in Nanoscale Science and Technology ((LNNST,volume 20))

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Abstract

In this report, we introduce a nanomanipulation and fabrication technology, which is useful to characterize thermoelectrical properties of individual one-dimensional nanosystems such as metallic or semiconducting carbon nanotubes (CNTs) and nanowires (NWs). For such characterization, a one-stop measurement platform was constructed by focused ion beam (FIB) nanolithography after which a freestanding NW was picked up from a bundle of NWs and placed on the platform using a nanomanipulator. As a unique and unparalleled control for nanoscale one-dimensional systems, FIB-assisted nanomanipulator could make a direct access to nanoscale materials and structures. Subsequently, the four-point 3-ω method combined with a nanoheater was used to obtain electrical conductivity, thermal conductivity, and Seebeck coefficient, with which one can estimate the figure of merit of β-silicon carbide (SiC) NWs. We found that the thermal conductivity of a single β-SiC NW was 82 ± 6 W/mK. The Seebeck coefficient was also successfully measured to be −1.21 mV/K. With a measured electrical conductivity of the NW, the dimensionless thermoelectrical figure of merit (ZT) was estimated to be 0.12.

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Authors and Affiliations

  1. Department of Mechanical and Energy Engineering, University of North Texas, Denton, TX, 76203-1098, USA

    Kyung-Min Lee & Tae-Youl Choi

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  1. Kyung-Min Lee
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  2. Tae-Youl Choi
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Correspondence to Tae-Youl Choi .

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Editors and Affiliations

  1. State Key Laboratory of Electronic, University of Electronic Science and Technology, Chengdu, People's Republic of China

    Zhiming M. Wang

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Lee, KM., Choi, TY. (2013). Focused Ion Beam-Assisted Nanoscale Processing and Thermoelectrical Characterization. In: Wang, Z. (eds) FIB Nanostructures. Lecture Notes in Nanoscale Science and Technology, vol 20. Springer, Cham. https://doi.org/10.1007/978-3-319-02874-3_14

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