Abstract
We report on several ultrafast electron transport phenomena occurring in wurtzite InN which are considered as the physical mechanisms responsible for the THz electric field radiation. We apply the ensemble Monte Carlo (EMC) method to simulate the streaming transport caused by (a) optical phonon emission and (b) impact ionization. Under specific conditions, in both streaming regimes the electron drift velocity reveals the sub-picosecond oscillations which are an indication of “readiness” of the semiconductor system to radiate an electric field in the THz range. We also investigate the electric field emission from InN and InAs surfaces induced by femtosecond laser excitation.
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© 2007 Springer-Verlag Wien
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Polyakov, V.M., Schwierz, F. (2007). EMC Simulation of THz Emission from Semiconductor Devices. In: Grasser, T., Selberherr, S. (eds) Simulation of Semiconductor Processes and Devices 2007. Springer, Vienna. https://doi.org/10.1007/978-3-211-72861-1_85
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DOI: https://doi.org/10.1007/978-3-211-72861-1_85
Publisher Name: Springer, Vienna
Print ISBN: 978-3-211-72860-4
Online ISBN: 978-3-211-72861-1
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