Simulation of Semiconductor Processes and Devices 2007

SISPAD 2007

  • Tibor Grasser
  • Siegfried Selberherr

Table of contents

  1. Front Matter
    Pages i-xv
  2. P. Castrillo, R. Pinacho, J. E. Rubio, L. M. Vega, M. Jaraiz
    Pages 9-12
  3. A. Martinez-Limia, C. Steen, P. Pichler, N. Gupta, W. Windl, S. Paul et al.
    Pages 13-16
  4. Luis A. Marqués, L. Pelaz, I. Santos, P. López, M. Aboy
    Pages 17-20
  5. Tejas Krishnamohan, Donghyun Kim, Christoph Jungemann, Anh-Tuan Pham, Bernd Meinerzhagen, Yoshio Nishi et al.
    Pages 21-24
  6. E. Tsukuda, Y. Kamakura, H. Takashino, T. Okagaki, T. Uchida, T. Hayashi et al.
    Pages 29-32
  7. L. P. Huang, K. C. Ku, Y. M. Sheu, C. F. Nieh, C. H. Chen, H. Chang et al.
    Pages 33-36
  8. H. Ceric, A. Nentchev, E. Langer, S. Selberherr
    Pages 37-40
  9. Chaffra A. Awo-Affouda, Max O. Bloomfield, Timothy S. Cale
    Pages 41-44
  10. Byungjoon Hwang, Yero Lee, Jeong-Guk Min, Hwakyung Shin, Namsu Lim, Sungjin Kim et al.
    Pages 45-48
  11. Jinyu Zhang, Wei Xiong, Min-Chun Tsai, Yan Wang, Zhiping Yu
    Pages 49-52
  12. Andreas Hössinger, Zoran Djurić, Artem Babayan
    Pages 53-56
  13. C. Fiegna, M. Braccioli, S. C. Brugger, F. M. Bufler, P. Dollfus, V. Aubry-Fortuna et al.
    Pages 57-60
  14. Seonghoon Jin, Massimo V. Fischetti, Ting-wei Tang
    Pages 61-64
  15. M. -A. Jaud, S. Barraud, J. Saint-Martin, A. Bournel, P. Dollfus, H. Jaouen
    Pages 65-68
  16. Z. Aksamija, U. Ravaioli
    Pages 73-76
  17. Jongchol Kim, Chia-Yu Chen, Robert W. Dutton
    Pages 77-80

About these proceedings

Introduction

The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta­ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec­ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.

Keywords

Performance VLSI algorithm algorithms modeling numerical methods optoelectronics simulation verification visualization

Editors and affiliations

  • Tibor Grasser
    • 1
  • Siegfried Selberherr
    • 1
  1. 1.Institut für MikroelektronikTechnische Universität WienViennaAustria

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-211-72861-1
  • Copyright Information Springer-Verlag Wien 2007
  • Publisher Name Springer, Vienna
  • eBook Packages Engineering
  • Print ISBN 978-3-211-72860-4
  • Online ISBN 978-3-211-72861-1
  • About this book