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Simulation of Semiconductor Processes and Devices 2007

SISPAD 2007

  • Tibor Grasser
  • Siegfried Selberherr

Table of contents

  1. Front Matter
    Pages i-xv
  2. P. Castrillo, R. Pinacho, J. E. Rubio, L. M. Vega, M. Jaraiz
    Pages 9-12
  3. A. Martinez-Limia, C. Steen, P. Pichler, N. Gupta, W. Windl, S. Paul et al.
    Pages 13-16
  4. Luis A. Marqués, L. Pelaz, I. Santos, P. López, M. Aboy
    Pages 17-20
  5. Tejas Krishnamohan, Donghyun Kim, Christoph Jungemann, Anh-Tuan Pham, Bernd Meinerzhagen, Yoshio Nishi et al.
    Pages 21-24
  6. E. Tsukuda, Y. Kamakura, H. Takashino, T. Okagaki, T. Uchida, T. Hayashi et al.
    Pages 29-32
  7. L. P. Huang, K. C. Ku, Y. M. Sheu, C. F. Nieh, C. H. Chen, H. Chang et al.
    Pages 33-36
  8. H. Ceric, A. Nentchev, E. Langer, S. Selberherr
    Pages 37-40
  9. Chaffra A. Awo-Affouda, Max O. Bloomfield, Timothy S. Cale
    Pages 41-44
  10. Byungjoon Hwang, Yero Lee, Jeong-Guk Min, Hwakyung Shin, Namsu Lim, Sungjin Kim et al.
    Pages 45-48
  11. Jinyu Zhang, Wei Xiong, Min-Chun Tsai, Yan Wang, Zhiping Yu
    Pages 49-52
  12. Andreas Hössinger, Zoran Djurić, Artem Babayan
    Pages 53-56
  13. C. Fiegna, M. Braccioli, S. C. Brugger, F. M. Bufler, P. Dollfus, V. Aubry-Fortuna et al.
    Pages 57-60
  14. Seonghoon Jin, Massimo V. Fischetti, Ting-wei Tang
    Pages 61-64
  15. M. -A. Jaud, S. Barraud, J. Saint-Martin, A. Bournel, P. Dollfus, H. Jaouen
    Pages 65-68
  16. Z. Aksamija, U. Ravaioli
    Pages 73-76
  17. Jongchol Kim, Chia-Yu Chen, Robert W. Dutton
    Pages 77-80
  18. Sung-Min Hong, Hong-Hyun Park, Chan Hyeong Park, Myoung Jin Lee, Hong Shick Min, Young June Park
    Pages 89-92
  19. M. Aldegunde, A. J. García-Loureiro, P. V. Sushko, A. L. Shluger, K. Kalna, A. Asenov
    Pages 97-100
  20. T. Herrmann, W. Klix, R. Stenzel, S. Duenkel, R. Illgen, J. Hoentschel et al.
    Pages 101-104
  21. H. Takashino, T. Okagaki, T. Uchida, T. Hayashi, M. Tanizawa, E. Tsukuda et al.
    Pages 105-108
  22. S. Yamakawa, J. Wang, Y. Tateshita, K. Nagano, M. Tsukamoto, H. Ohri et al.
    Pages 109-112
  23. K. H. Bach, R. Liebmann, M. Nawaz, C. Jungemann, E. Ungersboeck
    Pages 113-116
  24. N. Kusunoki, N. Yasutake, M. Awano, I. Mizushima, H. Yoshimura, S. Yamada et al.
    Pages 121-124
  25. Xinlin Wang, Andres Bryant, Omer Dokumaci, Phil Oldiges, Wilfried Haensch
    Pages 125-128
  26. Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, Ganesh Samudra, Yee-Chia Yeo
    Pages 129-132
  27. K. Sonoda, A. Sakai, M. Moniwa, K. Ishikawa, O. Tsuchiya, Y. Inoue
    Pages 137-140
  28. J. Shimokawa, T. Enda, N. Aoki, H. Tanimoto, S. Ito, Y. Toyoshima
    Pages 141-144
  29. D. Rideau, E. Batail, S. Monfray, C. Tavernier, H. Jaouen
    Pages 145-148
  30. S. Markov, N. Barin, C. Fiegna, S. Roy, E. Sangiorgi, A. Asenov
    Pages 149-152
  31. F. Sacconi, A. Pecchia, M. Povolotskyi, A. Di Carlo, J. M. Jancu
    Pages 153-156
  32. W. Gös, T. Grasser
    Pages 157-160
  33. Ximeng Guan, Yaohua Tan, Jing Lu, Lilin Tian, Yan Wang, Zhiping Yu
    Pages 161-164
  34. R. Brunetti, E. Piccinini
    Pages 169-176
  35. S. Potbharel, N. Goldsman, G. Pennington, A. Akturk, A. Lelis
    Pages 177-180
  36. Leonardo M. Hillkirk, Allen R. Hefner, Robert W. Dutton, Stephen B. Bayne, Heather O’Brien
    Pages 181-184
  37. U. Knipper, F. Pfirsch, T. Raker, J. Niedermeyr, G. Wachutka
    Pages 189-192
  38. A. T. Pham, C. Jungemann, B. Meinerzhagen
    Pages 193-196
  39. M. Vasicek, M. Karner, E. Ungersboeck, M. Wagner, H. Kosina, T. Grasser
    Pages 201-204
  40. M. Ali. Pourghaderi, Wim Magnus, Bart Sorée, Marc Meuris, Marc Heyns, Kristin De Meyer
    Pages 205-208

About these proceedings

Introduction

The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta­ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec­ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.

Keywords

Performance VLSI algorithm algorithms modeling numerical methods optoelectronics simulation verification visualization

Editors and affiliations

  • Tibor Grasser
    • 1
  • Siegfried Selberherr
    • 1
  1. 1.Institut für MikroelektronikTechnische Universität WienViennaAustria

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-211-72861-1
  • Copyright Information Springer-Verlag Wien 2007
  • Publisher Name Springer, Vienna
  • eBook Packages Engineering
  • Print ISBN 978-3-211-72860-4
  • Online ISBN 978-3-211-72861-1
  • Buy this book on publisher's site