Abstract
In this work, we show full-band calculations of the tunneling properties of ZrO2 and HfO2 high-κ oxides. First, we have determined semiempirical sp 3 s*d tight-binding (TB) parameters which reproduce ab-initio band dispersions of the high-κ oxides; then we have calculated transmission coefficients and tunneling currents for Si/ZrO2/Si and Si/HfO2/Si MOS structures. Results show a very low gate leakage current in comparison to SiO2-based structures with the same equivalent oxide thickness. The complex band structures of ZrO2 and HfO2 have been calculated; based on them we develop an energy dependent effective tunneling mass model. It is shown that this model can be used to obtain effective mass tunneling currents close to full-band results.
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References
International Technology Roadmap for Semiconductors (2005).
J. Robertson, “High dielectric constant gate oxides for metal oxide Si transistors”, Rep. Prog. Phys., 69 (2006), 327–396.
The ABINIT code is a common project of the Universit Catholique de Louvain, Corning Incorporated, and other contributors (URL http://www.abinit.org).
R. Puthenkovilakam, “An accurate determination of barrier heights at the HfO2/Si interfaces”, J.P. Chang, Journ.Appl. Phys, 96, 2701, (2004).
P.W. Peacock and J. Robertson, “Bonding, energies and band offsets of Si-ZrO2 and HfO2 gate oxide interfaces”, Phys. Rev. Letters, 92, 57601 (2004)
A. Di Carlo et al. in ‘Introducing Molecular Electronics’ by G. Cuniberti, G. Fagas, K. Richter (Spinger, Heidelberg, 2005)
M. Stadele, B.R. Tuttle, K. Hess, “Tunneling through ultrathin SiO2 gate oxides from microscopic models”, Journ.Appl. Phys, 89, 348 (2001)
F. Sacconi, J.M. Jancu, M. Povolotskyi, A. Di Carlo, submitted to IEEE Trans. Electron Devices
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© 2007 Springer-Verlag Wien
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Sacconi, F., Pecchia, A., Povolotskyi, M., Di Carlo, A., Jancu, J.M. (2007). Tunneling Properties of MOS Systems Based on High-k Oxides. In: Grasser, T., Selberherr, S. (eds) Simulation of Semiconductor Processes and Devices 2007. Springer, Vienna. https://doi.org/10.1007/978-3-211-72861-1_37
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DOI: https://doi.org/10.1007/978-3-211-72861-1_37
Publisher Name: Springer, Vienna
Print ISBN: 978-3-211-72860-4
Online ISBN: 978-3-211-72861-1
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