Abstract
In the past 5 years, advanced Silicon node and packaging technology are significantly driven by the growing market on 5G applications, high performance computing (HPC), internet of thing (IoT) and electronics in autonomous vehicle.
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References
IPC/JEDEC-9702 Standard (2004) Monotonic bend characterization of board-level interconnects. JEDEC, June 2004
JEDEC JESD22-B111A, board level drop test method of components for handheld electronic products. JEDEC, July 2003
Caers JFJM, Zhao XJ, Wong EH, Seah SKW, Selvanayagam CS, van Driel WD, Owens N, Leoni M, Tan LC, Eu PL, Lai YS, Yeh CL (2010) A study of crack propagation in Pb-free solder joints under drop impact. IEEE Trans Electron Packag Manuf 33(2):84–90
Zaal JJM, Hochstenbach HP, van Driel WD, Zhang GQ (2009) Solder interconnect reliability under drop impact loading conditions using high-speed cold bump pull. Microelectron Reliab 49(8):846–852
Wong EH, Seah SKW, Shim VPW (2008) A review of board level solder joints for mobile applications. Microelectron Reliab 48(11–12):1747–1758
SEMI G-86, Test method for measurement of chip (die) strength by mean of 3-point bending. SEMI, Aug. 2011
Tsai MY, Lin CS (2007) Testing and evaluation of silicon die strength. IEEE Trans Electron Packag Manuf 30(2):106–114
Chen J, Liu V, Lin L, Chung M, Gan CL, Takiar H (2021) Effects of epoxy molding compound on managed NAND(mNAND) package strain enhancement. Int Conf Electron Packag (ICEP) 2021:131–132
Liu V, Arifeen S, Bassett C, Chung M, Gan C, Takiar H (2021) Mechanical suite of flexural bending method for electronic memory packages. IEEE Int Conf Sens Nanotechnol (SENNANO) 2021:45–49
Che FX, Ong YC, Ng HW, Gan CL, Glancey C, Takiar H (2020) Study on package strength of uMCP (Multichip package) for mobile application through three-point bending test and simulation. In: 2020 IEEE 22nd electronics packaging technology conference (EPTC), pp 57–62
Nelson W (1985) Weibull analysis of reliability data with few or no failures. J Qual Technol 17:140–146
Enkhmunkh N, Kim GW, Hwang K-J, Hyun S-H (2007) A parameter estimation of Weibull distribution for reliability assessment with limited failure data. In: 2007 international forum on strategic technology, pp 39–42. https://doi.org/10.1109/IFOST.2007.4798514
Kim GW (Jan 2002) A study on the ‘Substation reliability assessment using Weibull distribution. Trans KIEE SIA(I):7–14
Li W (2002) Incorporating aging failures in power system reliability assessment evaluation. IEEE Trans Power Syst 17(3):918–923
Peng K, Xu W, Qin Z, Feng L, Lai L, Koh W (2017) Reflow warpage induced interconnect gaps between package/PCB and PoP top/bottom packages. In: 2017 IEEE 67th electronic components and technology conference (ECTC), pp 1378–1383. https://doi.org/10.1109/ECTC.2017.281
Peng K, Yang W, Lai L, Xu W, Feng L (2016) Dynamic warpage characterization and reflow soldering defects of BGA packages. In: 2016 IEEE 66th electronic components and technology conference (ECTC), pp 694–699. https://doi.org/10.1109/ECTC.2016.135
Halvi AS, Ahn W, Agonafer D, Novotny S (2004) Simulation of PWB warpage during fabrication and due to reflow. In: The ninth intersociety conference on thermal and thermomechanical phenomena in electronic systems (IEEE Cat. No. 04CH37543), vol 2, pp 674–678
Chen CM, Gan CL, Zou YS, Chung MH, Takiar H (2020) Strain response of a semiconductor package during drop test and fast gating method by bend test. In: 2020 IEEE 22nd electronics packaging technology conference, EPTC 2020, vol 3, No c, pp 49–52
Chung S, Kwak JB (2020) Comparative study on reliability and advanced numerical analysis of BGA subjected to product-level drop impact test for portable electronics. Electron (Switz) 9(9):1–13
Kang TM, Lee YC, Bae BK, Song WS, Lee JS (2017) A study on the correlation between experiment and simulation board level drop test for SSD. In: 2017 18th international conference on thermal, mechanical and multi-physics simulation and experiments in microelectronics and microsystems, EuroSimE 2017, pp 1–6
Wang W, Robbins D, Glancey C (2016) Simulation model to predict failure cycles in board level drop test. In: Proceedings—electronic components and technology conference, pp 1886–1891
Che FX, Pang JHL (2015) Study on board-level drop impact reliability of Sn–Ag–Cu solder joint by considering strain rate dependent properties of solder. IEEE Trans Device Mater Reliab 15(2):181–190
Zhang A (2014) High acceleration board level reliability drop test using dual mass shock amplifier. In: 2014 electronic components and technology conference, pp 1441–1448
Lou M, Zhou J, Wen L, Feng W, Lee J (2010) System level drop reliability method research for netbook memory module. In: Proceedings—2010 11th international conference on electronic packaging technology and high density packaging, ICEPT-HDP 2010, No 15, pp 1043–1048
JEDEC IPC-9704A, printed circuit assembly strain gage test guideline. JEDEC, Jan 2012
Holm G, Eric S, Martin B, Petra H, Kashi V, Frank K, Dirk B, Hans-Juergen E (2013) Experimental analyses of the mechanical reliability of advanced BEOL/fBEOL stacks regarding CPI loading. In: IEEE international reliability physics symposium proceedings 2013, 5C.1.1-5C.1.10
Silomon J, Gluch J, Clausner A, Zschech E (2021) Mechanical BEoL stability investigation at Cu-pillars under cyclic load. In: Proceedings of the international symposium on the physical and failure analysis of integrated circuits, IPFA
Silomon J, Gluch J, Clausner A, Paul J, Zschech E (2021) Crack identification in BEoL stacks using acoustic emission testing and nano x-ray computed tomography. Microelectron Reliab 121
Sart C, Garreignot S, Fiori VF, Kermarrec O, Moutin C, Tavernier C, Jaouen H (2015) Experimental and numerical investigations on Cu/low-k interconnect reliability during copper pillar shear test. In: Proceedings—electronic components and technology conference 2015, pp 1594–1598
Baumann RC (March 2001) Soft errors in advanced semiconductor devices—part I: the three radiation sources. IEEE Trans Device Mater Reliab 1(1)
Baumann RC (Sept 2005) Radiation-induced soft errors in advanced semiconductor technologies. IEEE Trans Device Mater Reliab 5(3)
Wilkinson J, Hareland S (Sept 2005) A cautionary tale of soft errors induced by SRAM packaging materials. IEEE Trans Device Mater Reliab 5(3)
Gedion M et al (Dec 2010) Monte Carlo simulations to evaluate the contribution of Si bulk interconnects and packaging to alpha-soft error rates in advanced technologies. IEEE Trans Nucl Sci 57(6)
Ziegler J. Interactions of ions with matter. www.srim.org
Karnik T et al (April–June 2004) Characterization of soft errors caused by single event upsets in CMOS processes. IEEE Trans Dependable Secure Comput 1(2)
Kumar S et al (2013) Soft error issue and importance of low alpha solders for microelectronics packaging. Rev Adv Mater Sci 34(2):185–202
Narasimham B et al (2017) Influence of polonium diffusion at elevated temperature on the alpha emission rate and memory SER performance. In: IEEE international reliability physics symposium (IRPS)
Kobayashi H et al (2009) Alpha particle and neutron-induced soft error rates and scaling trends in SRAM. In: IEEE international reliability physics symposium
Gedion M et al (June 2011) Uranium and thorium contribution to soft error rate in advanced technologies. IEEE Trans Nucl Sci 58(3)
Kawasaki H, Clark BM, Nishino T, Gordon MS (2015) Energy dependent efficiency in low background alpha measurements and impacts on accurate alpha characterization. IEEE Trans Nucl Sci 62(6)
Wilkinson JD, Clark BM, Wong R, Slayman C, Carroll B, Gordon M, He Y, Lauzeral O, Lepla K, Marckmann J, McNally B, Roche P, Tucker M, Wu T (2011) Multicenter comparison of alpha particle measurements and methods typical of semiconductor processing. In: IRPS
Gordon MS, Heidel DF, Rodbell KP, Dwyer-McNally B (Dec 2009) An evaluation of an ultralow background alpha-particle detector. IEEE Trans Nucl Sci 56(6)
Mizutani A, Oguma K, Fujinami M (2013) Discrimination of low-alpha 210 lead for electronics material using isotope ratio measurement by ICP-QMS, J-STAGE. Radioisotopes 62(2):73–82
Lee SK, Kang SY, Jang DY, Lee CH, Kang SM, Kang BH, Lee WG, Kim YK (2011) Comparison of new simple methods in fabricating ZnS(Ag) scintillators for detecting alpha particles. Prog Nucl Sci Technol 1:194–197
Martinie S, Autran JL, Uznanski S, Roche P, Gasiot G, Munteanu D, Sauze S (2011) Alpha-particle induced soft-error rate in CMOS 130 nm SRAM. IEEE Trans Nucl Sci 58(3)
Ramarapu R, Wong R, Clark B, Shen T (2013) A study of temperature induced polonium diffusion on SRAM SER performance. IEEE-SCV SER workshop presentation
Mahatme NN, Bhuva B, Gaspard N, Assis T, Xu Y, Marcoux P, Vilchis M, Narasimham B, Shih A, Wen SJ, Wong R, Tam N, Shroff M, Koyoma S, Oates A (2015) Terrestrial SER characterization for nanoscale technologies: a comparative study. In: 2015 IEEE international reliability physics symposium
Fang YP, Oates AS (2016) Characterization of single bit and multiple cell soft error events in planar and FinFET SRAMs. In: IEEE Trans Device Mater Reliab 16(2)
Narasimham B, Gupta S, Reed D, Wang JK, Hendrickson N, Taufique H (2018) Scaling trends and bias dependence of the soft error rate of 16 nm and 7 nm FinFET SRAMs. In: 2018 IEEE international reliability physics symposium (IRPS)
Liu V, Chen CM, Chen J, Chung MH and Gan CL (2022) Study of robust package strength characterization of memory packages for handheld application, Memories - Materials, Devices, Circuits and Systems 3
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Gan, C.L., Huang, CY. (2023). Specific Packaging Reliability Testing. In: Interconnect Reliability in Advanced Memory Device Packaging. Springer Series in Reliability Engineering. Springer, Cham. https://doi.org/10.1007/978-3-031-26708-6_6
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DOI: https://doi.org/10.1007/978-3-031-26708-6_6
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