Abstract
The continued evolution in nanoelectronics and nanophotonics has been made possible by the recent developments in Atomic Layer Deposition and Atomic Layer Etching. While uniform deposition of conformal films with controllable thickness is a key feature of Atomic Layer Deposition, Atomic Layer Etching offers the advantages of controlled removal of chemically modified areas. Various case studies of the applications of these technologies in dielectrics, metals and diffusion barriers will be discussed.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Similar content being viewed by others
References
Khan R et al (2018) Area-selective atomic layer deposition using Si precursors as inhibitors. Chem Mater 30(21):7603–7610
Fang M, Ho JC (2015) Area-selective atomic layer deposition: conformal coating, subnanometer thickness control, and smart positioning. ACS Nano 9:8651–8654. https://doi.org/10.1021/acsnano.5b05249
Kim H, Lee H-B-R, Maeng W-J (2009) Applications of atomic layer deposition to nanofabrication and emerging nanodevices. Thin Solid Films 517:2563–2580. https://doi.org/10.1016/j.tsf.2008.09.007
Mackus AJM, Bol AA, Kessels WMM (2014) The use of atomic layer deposition in advanced nanopatterning. Nanoscale 6:10941–10946. https://doi.org/10.1039/C4NR01954G
Singh JA, Yang N, Bent SF (2017) Nanoengineering heterogeneous catalysts by atomic layer deposition. Annu Rev Chem Biomol Eng 8:41–62. https://doi.org/10.1146/annurev-chembioeng-060816-101547
Lin K-Y et al (2020) Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition. J Vac Sci Technol, A 38(3):032601
Haider A et al (2016) Area-selective atomic layer deposition using an inductively coupled plasma polymerized fluorocarbon layer: a case study for metal oxides. J Phys Chem C 120(46):26393–26401
Lemaire PC et al (2016) Understanding inherent substrate selectivity during atomic layer deposition: effect of surface preparation, hydroxyl density, and metal oxide composition on nucleation mechanisms during tungsten ALD. J Chem Phys 146(5):052811
Mameli A et al (2017) Area-selective atomic layer deposition of SiO2 using acetylacetone as a chemoselective inhibitor in an ABC-type cycle. ACS Nano 11(9):9303–9311
Stevens E et al (2018) Area-selective atomic layer deposition of TiN, TiO2, and HfO2 on silicon nitride with inhibition on amorphous carbon. Chem Mater 30(10):3223–3232
Leskelä M, Ritala M (2003) Atomic layer deposition chemistry: recent developments and future challenges. Angew Chem Int Ed 42(45):5548–5554
Chen R et al (2005) Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification. Appl Phys Lett 86(19):191910
Färm E et al (2006) Self-assembled octadecyltrimethoxysilane monolayers enabling selective-area atomic layer deposition of iridium. Chem Vap Deposition 12(7):415–417
Ras RHA et al (2008) Blocking the lateral film growth at the nanoscale in area-selective atomic layer deposition. J Am Chem Soc 130(34):11252–11253
Minaye Hashemi FS et al (2015) Self-correcting process for high quality patterning by atomic layer deposition. ACS Nano 9(9):8710–8717
Minaye Hashemi FS et al (2016) Selective deposition of dielectrics: limits and advantages of alkanethiol blocking agents on metal-dielectric patterns. ACS Appl Mater Interfaces 8(48):33264–33272
Hashemi FSM, Bent SF (2016) Sequential regeneration of self-assembled monolayers for highly selective atomic layer deposition. Adv Mater Interfaces 3(21):1600464
Closser RG et al (2017) Correcting defects in area selective molecular layer deposition. J Vac Sci Technol, A 35(3):031509
Heyne MH et al (2016) Two-dimensional WS2nanoribbon deposition by conversion of pre-patterned amorphous silicon. Nanotechnology 28(4):04LT01
Delabie A et al (2015) Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents. Chem Commun 51(86):15692–15695
Mackus AJM (2018) Approaches and opportunities for area-selective atomic layer deposition. 2018 Int Symp VLSI Technol Syst Appl (VLSI-TSA)
Mameli A et al (2017) (Invited) Area-selective atomic layer deposition: role of surface chemistry. ECS Trans 80(3):39–48
Vos MFJ et al (2019) Area-selective deposition of ruthenium by combining atomic layer deposition and selective etching. Chem Mater 31(11):3878–3882
Vallat R et al (2019) Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: a bottom up approach for the simplification of 3D integration scheme. J Vac Sci Technol, A 37(2):020918
Song SK et al (2019) Integrated isothermal atomic layer deposition/atomic layer etching supercycles for area-selective deposition of TiO2. Chem Mater 31(13):4793–4804
Huard CM et al (2018) Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas. J Vac Sci Technol, A 36(6):06B101
Martin RM, Chang JP (2009) Plasma etching of Hf-based high-k thin films. Part I. Effect of complex ions and radicals on the surface reactions. J Vac Sci Technol, A 27(2):209–216
Martin RM et al (2009) Plasma etching of Hf-based high-k thin films. Part II. Ion-enhanced surface reaction mechanisms. J Vac Sci Technol, A 27(2):217–223
Marchack N, Chang JP (2012) Chemical processing of materials on silicon: more functionality, smaller features, and larger wafers. Ann Rev Chemical Biomol Eng 3(1):235–262
Hélot M et al (2005) Plasma etching of HfO2 at elevated temperatures in chlorine-based chemistry. J Vac Sci Technol, A 24(1):30–40
Bodart P et al (2012) SiCl4/Cl2 plasmas: a new chemistry to etch high-k materials selectively to Si-based materials. J Vac Sci Technol, A 30(2):020602
Mackus AJM et al (2019) From the bottom-up: toward area-selective atomic layer deposition with high selectivity. Chem Mater 31(1):2–12
King MJ et al (2018) Ab initio analysis of nucleation reactions during tungsten atomic layer deposition on Si(100) and W(110) substrates. J Vac Sci Technol, A 36(6):061507
Bobb-Semple D et al (2019) Area-selective atomic layer deposition assisted by self-assembled monolayers: a comparison of Cu Co, W, and Ru. Chem Mater 31(5):1635–1645
Dobkin D (2020) Tungsten and tungsten silicide chemical vapor deposition from https://www.enigmatic-consulting.com/semiconductor_processing/CVD_Fundamentals/films/W_WSi.html#:~:text=Tungsten%20is%20used%20because%20of,W%20to%20the%20silicon%20dioxide
Yang M et al (2018) Low-resistivity α-phase tungsten films grown by hot-wire assisted atomic layer deposition in high-aspect-ratio structures. Thin Solid Films 646:199–208
Kalanyan B et al (2016) Using hydrogen to expand the inherent substrate selectivity window during tungsten atomic layer deposition. Chem Mater 28(1):117–126
Tőkei Z et al (2016) On-chip interconnect trends, challenges and solutions: how to keep RC and reliability under control. In: 2016 IEEE Symposium VLSI Technology
Yoon J et al (2011) Atomic layer deposition of Co using N2∕H2 plasma as a reactant. J Electrochem Soc 158(11):H1179
Lee H-B-R, Kim H (2006) High-quality cobalt thin films by plasma-enhanced atomic layer deposition. Electrochem Solid-State Lett 9(11):G323
Kerrigan MM et al (2017) Low temperature, selective atomic layer deposition of cobalt metal films using Bis(1,4-di-tert-butyl-1,3-diazadienyl)cobalt and alkylamine precursors. Chem Mater 29(17):7458–7466
Bernal-Ramos K et al (2015) Atomic layer deposition of cobalt silicide thin films studied by in situ infrared spectroscopy. Chem Mater 27(14):4943–4949
Lee H et al (2009) Cobalt and nickel atomic layer depositions for contact applications. In: 2009 IEEE international interconnect technology conference
Colgan EG et al (1996) Formation and stability of silicides on polycrystalline silicon. Mater Sci Eng: R: Rep 16(2):43–96
Telford SG et al (1993) Chemically vapor deposited tungsten silicide films using dichlorosilane in a single-wafer reactor: growth, properties, and thermal stability. J Electrochem Soc 140(12):3689–3701
Saito T et al (2007) Kinetic modeling of tungsten silicide chemical vapor deposition from WF6 and Si2H6: determination of the reaction scheme and the gas-phase reaction rates. Chem Eng Sci 62(22):6403–6411
Widmer AE, Fehlmann R (1986) The growth and physical properties of low pressure chemically vapour-deposited films of tantalum silicide on n+-type polycrystalline silicon. Thin Solid Films 138(1):131–140
Chang KY, Pancholy RK (1981) Tantalum silicide interconnect characterization by surface analytical techniques. Appl Surface Sci 9(1):377–387
Inoue S et al (1983) Properties of molybdenum silicide film deposited by chemical vapor deposition. J Electrochem Soc 130(7):1603–1607
Yao Z et al (1999) Molybdenum silicide based materials and their properties. J Mater Eng Perform 8(3):291–304
Bocelli S et al (1995) Experimental identification of the optical phonon of CoSi2 in the infrared. Appl Surf Sci 91(1):30–33
Hsia SL et al (1992) Resistance and structural stabilities of epitaxial CoSi2 films on (001) Si substrates. J Appl Phys 72(5):1864–1873
Takahashi F et al (2001) Growth and characterization of CoSi2 films on Si (100) substrates. Appl Surf Sci 169–170:315–319
Wölfel M et al (1990) Optical constants of thin CoSi2 films on silicon. Appl Phys A 50(2):177–181
Starke U et al (1998) Structure of epitaxial CoSi2 films on Si(111) studied with low-energy electron diffraction (LEED). Surf Rev Lett 05(01):139–144
Bernasconi R, Magagnin L (2018) Review—ruthenium as diffusion barrier layer in electronic interconnects: current literature with a focus on electrochemical deposition methods. J Electrochem Soc 166(1):D3219–D3225
Arunagiri TN et al (2005) 5nm ruthenium thin film as a directly plateable copper diffusion barrier. Appl Phys Lett 86(8):083104
Damayanti M et al (2006) Effects of dissolved nitrogen in improving barrier properties of ruthenium. Appl Phys Lett 88(4):044101
Choi BH et al (2010) Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition. Microelectron Eng 87(5):1391–1395
Xie Q et al (2009) Ru thin film grown on TaN by plasma enhanced atomic layer deposition. Thin Solid Films 517(16):4689–4693
Ovanesyan RA et al (2019) Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: current status and future outlook. J Vac Sci Technol, A 37(6):060904
Park J-M et al (2016) Plasma-enhanced atomic layer deposition of silicon nitride using a novel silylamine precursor. ACS Appl Mater Interfaces 8(32):20865–20871
Shin D et al (2018) Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor. Thin Solid Films 660:572–577
Lee Y-S et al (2017) Low temperature atomic layer deposition of SiO2 thin films using di-isopropylaminosilane and ozone. Ceram Int 43(2):2095–2099
Cui J et al (2017) Highly effective electronic passivation of silicon surfaces by atomic layer deposited hafnium oxide. Appl Phys Lett 110(2):021602
Bills B et al (2011) Effects of atomic layer deposited HfO2 compact layer on the performance of dye-sensitized solar cells. Thin Solid Films 519(22):7803–7808
Oudot E et al (2017) Hydrogen passivation of silicon/silicon oxide interface by atomic layer deposited hafnium oxide and impact of silicon oxide underlayer. J Vac Sci Technol, A 36(1):01A116
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2021 The Minerals, Metals & Materials Society
About this paper
Cite this paper
Hossain, S., Gokce, O.H., Ravindra, N.M. (2021). Atomic Layer Deposition and Atomic Layer Etching—An Overview of Selective Processes. In: TMS 2021 150th Annual Meeting & Exhibition Supplemental Proceedings. The Minerals, Metals & Materials Series. Springer, Cham. https://doi.org/10.1007/978-3-030-65261-6_20
Download citation
DOI: https://doi.org/10.1007/978-3-030-65261-6_20
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-030-65260-9
Online ISBN: 978-3-030-65261-6
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)