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Practical aspects of producing MIS structures with good prospects using atomic layer deposition technology

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Abstract

The physical and chemical foundations of the atomic layer deposition (ALD) process, the advantages of ALD technology, and possible applications for further miniaturizing and improving the performance of semiconductor devices are considered. The results of the atomic layer deposition of the advanced nanoelectronic material hafnium oxide are discussed. The dielectric characteristics’ measurements and microstructure analysis results are given.

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Authors and Affiliations

  1. Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia

    A. J. Aliabev & A. S. Korotkov

Authors
  1. A. J. Aliabev
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  2. A. S. Korotkov
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Correspondence to A. J. Aliabev.

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Original Russian Text © A.J. Aliabev, A.S. Korotkov, 2016, published in Mikroelektronika, 2016, Vol. 45, No. 4, pp. 243–251.

The article was translated by the authors.

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Aliabev, A.J., Korotkov, A.S. Practical aspects of producing MIS structures with good prospects using atomic layer deposition technology. Russ Microelectron 45, 229–236 (2016). https://doi.org/10.1134/S1063739716040028

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  • DOI: https://doi.org/10.1134/S1063739716040028

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