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Indium-Free Alternative Transparent Conducting Electrodes: An Overview and Recent Developments

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Metal and Metal Oxides for Energy and Electronics

Part of the book series: Environmental Chemistry for a Sustainable World ((ECSW,volume 55))

Abstract

The cost and demand of indium tin oxide (ITO) electrodes are high due to extensive usage in modern gadgets. Presently the industry is facing the problem of scarcity of indium, which has led to increased exploration of alternate materials for replacing indium-based transparent conducting oxide electrodes (TCOs). Hence, development of highly efficient and cost-effective transparent conducting electrodes (TCEs) to meet out the demand is the need of the hour. This chapter first gives a brief outline of the market analysis on the availability of indium and also the status of alternate materials that are currently competing in the market. This is followed by a brief overview of various materials that are explored for TCE applications such as metal nanowires, carbon nanotubes, graphene, binary/multi-component oxide systems, etc. The general properties of a material that are desired for serving as an TCE are also dealt in sufficient detail. Among the oxide-based TCEs, binary metal oxides possess good electrical and optical properties and are easy for doping with a variety of donor elements. Importantly, the AO2 binary rutile structure of SnO2 offers high flexibility to incorporate dopants at the “A” site leading to tuning of bandgap and surface work function. In view of this flexibility, we have portrayed important results of SnO2 doped with donor elements like Sb, Sb-Ba (co-doping), Nb, and Ta by the facile and cost-effective spray pyrolysis method. The structural, surface morphology, optical, electrical, and temperature stability of sheet resistance of these films are discussed.

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Abbreviations

ATO:

Antimony-doped tin oxide

BATO:

Barium antimony-codoped tin oxide

CBM:

Conduction band minimum

CdO:

Cadmium oxide

Eg:

Energy gap between VBM and CBM

Egopt:

Optical bandgap

\( {\mathrm{E}}_{\mathrm{g}}^{\mathrm{MB}} \) :

Moss–Burstein energy shift

FoM:

Figure of merit

FTO:

Fluorine-doped tin oxide

ITO:

Indium tin oxide

NTO:

Niobium-doped tin oxide

OLED:

Organic light-emitting diodes

Sb-doped SnO2:

Antimony-doped tin oxide

SnO:

Tin (II) oxide/stannous oxide

SnO2:

Tin (IV) oxide/stannic oxide

TCE:

Transparent conducting electrode

TCO :

Transparent conducting oxide

TTO:

Tantalum-doped tin oxide

VBM:

Valence band maximum

ZnO:

Zinc oxide

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Acknowledgments

The author DPJ thanks NIT-Warangal for research seed grant (2014) funding toward procuring the custom-made spray pyrolysis unit. The author DPJ also thanks SERB, Govt. of India, for research grant under the file No.: YSS/2014/000191. The authors thank Prof. A. Subrahmanyam, Dept. of Physics, IIT Madras, India, for Kelvin Probe measurements.

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Correspondence to D. Paul Joseph or K. Thangaraju .

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Ramarajan, R., Paul Joseph, D., Thangaraju, K., Kovendhan, M. (2021). Indium-Free Alternative Transparent Conducting Electrodes: An Overview and Recent Developments. In: Rajendran, S., Qin, J., Gracia, F., Lichtfouse, E. (eds) Metal and Metal Oxides for Energy and Electronics. Environmental Chemistry for a Sustainable World, vol 55. Springer, Cham. https://doi.org/10.1007/978-3-030-53065-5_5

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