Abstract
The purpose of this lecture series is to identify the important areas of device physics and the questions related to them. In addressing these problems we will emphasize an understanding of transport within these devices and the role of the circuit, the boundaries and the material variations. We will also scrutinize some of the formal underpinnings of device physics. Thus, the lectures will be primarily theoretical. With regard to experimental device physics studies, direct evidence of high speed, submicron scale effects is sparse, and is likely to remain so for the near future. Although, here, recent activities by workers at Bell1, Los Alamos2, and the University of Paris—Orsay3, on submicron, high speed device phenomenology, may provide some important keys to device related effects.
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References
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Grubin, H.L. (1988). Transport and Material Considerations for Submicron Devices. In: Grubin, H.L., Ferry, D.K., Jacoboni, C. (eds) The Physics of Submicron Semiconductor Devices. NATO ASI Series, vol 180. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2382-0_3
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