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The Physics of Submicron Semiconductor Devices

  • Harold L. Grubin
  • David K. Ferry
  • C. Jacoboni

Part of the NATO ASI Series book series (NSSB, volume 180)

Table of contents

  1. Front Matter
    Pages i-viii
  2. Eugène Constant
    Pages 1-31
  3. Karl Hess
    Pages 33-43
  4. Colin E. C. Wood
    Pages 179-194
  5. Carl W. Wilmsen
    Pages 195-221
  6. Winfried Mönch
    Pages 253-287
  7. Carlo Jacoboni
    Pages 289-322
  8. Lino Reggiani
    Pages 323-360
  9. Karl Hess
    Pages 361-372
  10. C. D. W. Wilkinson, S. P. Beaumont
    Pages 373-400
  11. D. K. Ferry
    Pages 503-519
  12. G. J. Iafrate
    Pages 521-576
  13. Peter A. Blakey, Jack East, Melvin P. Shaw
    Pages 591-606
  14. Jacques Zimmermann, Anne Ghis, Bernard Boittiaux
    Pages 607-627
  15. Nuyen T. Linh
    Pages 629-643
  16. Mordehai Heiblum, Marshall I. Nathan
    Pages 645-657
  17. R. H. Williams
    Pages 683-701
  18. Back Matter
    Pages 729-736

About this book

Introduction

The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.

Keywords

Semiconductor integrated circuit material micro-alloy transistor physics transistor

Editors and affiliations

  • Harold L. Grubin
    • 1
  • David K. Ferry
    • 2
  • C. Jacoboni
    • 3
  1. 1.Scientific Research Associates, Inc.GlastonburyUSA
  2. 2.Arizona State UniversityTempeUSA
  3. 3.Institute of PhysicsUniversity of ModenaModenaItaly

Bibliographic information

  • DOI https://doi.org/10.1007/978-1-4899-2382-0
  • Copyright Information Springer-Verlag US 1988
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4899-2384-4
  • Online ISBN 978-1-4899-2382-0
  • Series Print ISSN 0258-1221
  • Buy this book on publisher's site