Abstract
Lithography plays a central role in the fabrication of electronic devices. The minimum feature size required in the device is important in the choice of lithographic method. Generally for linewidths above 1μm linewidth optical lithography is used whilst for smaller dimensions it is necessary to use electron, ion beam or X-ray lithography. The linewidths in current production VLSI circuits range between 1 and 3μm; there are programs in the U.S. and the U.K. to reduce the linewidth to 0.5μm over the next few years(1). Single conventional semiconducting electronic devices have been made with gates as small as 0.1μm and some experimental superconducting devices employ features with sizes in the 10–30nm range.
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Wilkinson, C.D.W., Beaumont, S.P. (1988). Submicron Lithography. In: Grubin, H.L., Ferry, D.K., Jacoboni, C. (eds) The Physics of Submicron Semiconductor Devices. NATO ASI Series, vol 180. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2382-0_11
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