Abstract
The physical integrity of very thin LPCVD silicon films has been studied as a function of deposition temperature and pressure. Integrity is defined as the ability of the film to protect an underlying gate oxide from an HF etch. Films deposited under certain common conditions are quite porous and cannot protect the gate oxide. A pressure dependence was seen for deposition temperatures greater than 560°C. Films deposited in the amorphous phase do provide protection over a broad range of pressures and therefore must be continuous.
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© 1993 Springer Science+Business Media New York
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Chonko, M., Vandenberg, D., Keitz, D. (1993). The Integrity of Very Thin Silicon Films Deposited on SIO2 . In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1588-7_39
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DOI: https://doi.org/10.1007/978-1-4899-1588-7_39
Publisher Name: Springer, Boston, MA
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