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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2

  • C. Robert Helms
  • Bruce E. Deal

Table of contents

  1. Front Matter
    Pages i-xvi
  2. Thermal Oxidation Mechanisms and Modeling

    1. Front Matter
      Pages 1-2
    2. A. Marshall Stoneham
      Pages 3-6
    3. Isabelle Trimaille, Stan I. Raider, Jean-Jacques Ganem, Serge Rigo, Nicholas A. Penebre
      Pages 7-13
    4. H. F. Wei, A. K. Henning, J. Slinkman, J. L. Rogers
      Pages 31-41
  3. Novel Oxidation Methods and Characterization

  4. Deposition and Properties of SiO2

  5. Chemical Properties of Si Surfaces Related to Oxidation and Oxide Deposition

    1. Front Matter
      Pages 175-176
    2. Masataka Hirose, Masaru Takakura, Tatsuhiro Yasaka, Seiichi Miyazaki
      Pages 177-186
    3. Mizuho Morita, Tadahiro Ohmi
      Pages 199-206
    4. B. Garrido, F. Gessinn, J. L. Prom, J. R. Morante, J. Samitier, G. Sarrabayrouse
      Pages 215-222
    5. K.-C. Cho, J.-G. Park, Y.-S. Kwak, D.-J. Lee, D.-S. Lim, C-K. Shin et al.
      Pages 223-233
  6. Chemical, Structural, and Microroughness Effects at the Si-SiO2 Interface

    1. Front Matter
      Pages 235-236
    2. F. J. Himpsel, D. A. Lapiano-Smith, J. F. Morar, J. Bevk
      Pages 237-245
    3. Hiroyuki Akatsu, Yasuyuki Sumi, Iwao Ohdomari
      Pages 247-256
    4. T. Ohmi, T. Tsuga, J. Takano
      Pages 257-265
    5. Mark Chonko, Vidya Kaushik
      Pages 267-272
    6. Hisaaki Suga, Hidenobu Abe, Hiroshi Koya, Toshihiro Yoshimi, Isamu Suzuki, Hideo Yoshioka et al.
      Pages 279-287
    7. J.-G. Park, S.-P. Choi, G.-S. Lee, Y.-J. Jeong, Y.-S. Kwak, C.-K. Shin et al.
      Pages 289-298
    8. V. Nayar, R. Jackson, A. J. Pidduck, C. Pickering
      Pages 299-305
  7. Novel Structures, Processes, and Phenomena

    1. Front Matter
      Pages 307-308
    2. Sorin Cristoloveanu, Thierry Ouisse
      Pages 309-318
    3. Peter W. Wyatt, Gregory J. Dunn
      Pages 319-328
    4. Richard B. Klein, Nelson S. Saks, Richard R. Siergiej
      Pages 337-344
    5. Dimitrios N. Kouvatsos, Ralph J. Jaccodine, Fred A. Stevie
      Pages 345-352
    6. Mark Chonko, David Vandenberg, Douglas Keitz
      Pages 357-362
    7. Y. K. Su, C. J. Hwang, J. D. Lin
      Pages 363-370
  8. Defects and Hot-Carrier Induced Damage in Si-SiO2 Systems

    1. Front Matter
      Pages 371-372

About this book

Introduction

The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.

Keywords

defects dielectrics electronics modeling semiconductor semiconductor devices

Editors and affiliations

  • C. Robert Helms
    • 1
  • Bruce E. Deal
    • 1
  1. 1.Stanford UniversityStanfordUSA

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