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Ultrafast Transport Measurements in Bulk Semiconductors and Tunneling Devices Using Electro-Optic Sampling

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Spectroscopy of Semiconductor Microstructures

Part of the book series: NATO ASI Series ((NSSB,volume 206))

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Abstract

Electro-optic sampling (EOS) is a technique which has been developed for measuring transient electrical fields with subpicosecond resolution. It takes advantage of the inherent speed of the linear electro-optic effect (Pockels effect) to convert a fast electrical transient into a fast optical transient. The optical transient is then probed using the conventional pump/probe approach in conjunction with a short-pulse dye laser. Two applications of this technique will be discussed which are relevant to the study of transport physics on small time and dimension scales.

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Author information

Authors and Affiliations

  1. Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, England, CB3 OHE

    Kevin E. Meyer

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  1. Kevin E. Meyer
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Editors and Affiliations

  1. University of Cambridge, Cambridge, UK

    Gerhard Fasol

  2. International School for Advanced Studies (SISSA), Trieste, Italy

    Annalisa Fasolino

  3. University of Rome II, Rome, Italy

    Paolo Lugli

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© 1989 Springer Science+Business Media New York

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Meyer, K.E. (1989). Ultrafast Transport Measurements in Bulk Semiconductors and Tunneling Devices Using Electro-Optic Sampling. In: Fasol, G., Fasolino, A., Lugli, P. (eds) Spectroscopy of Semiconductor Microstructures. NATO ASI Series, vol 206. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6565-6_37

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  • DOI: https://doi.org/10.1007/978-1-4757-6565-6_37

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-6567-0

  • Online ISBN: 978-1-4757-6565-6

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