Abstract
We have grown atomic layer superlattices, i.e., ultrathin-layer superlattices and double delta-doped structures, based on metalorganic chemical vapor deposition. The (AlAs)m(GaAs)n ultrathin layer superlattices have been characterized by photoluminescence and Raman scattering experiment. The ultrathinlayer superlattice is revealed to be a system of quasi-three dimensional electrons and quasi-two dimensional LO phonons. The lowest conduction band in the superlattice is indicated to be a zone-folding-induced mixed-state of X and Γ bands. An idea of the isotope superlattices is proposed. We have used the double delta-doped structure to fabricate nano-structure devices with the aid of electron-beam-induced resist process, demonstrating a potential interest of universal field-effect-transistor.
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References
L. Esaki and R. Tsu, Superlattic and Negative Differential Conductivity in Semiconductors, IBM J. Res. Develop. 14; 61 (1970)
B. Jusserand, D. Paquet, and A. Regreny, Folded Optical Phonons in GaAs/A1GaAs Superlattices, Phys. Rev. B30; 6245 (1984)
M. Nakayama, K. Kubota, H. Kato, S. Chika, and N. Sano, Raman Scattering from GaAs—AlAs Monolayer—Controlled Superlattices, Solid State Commun. 53: 493 (1985)
A. K. Sood, J. Menendez, M. Cardona, and K. Ploog, Resonance Raman Scattering by Confined LO and TO phonons in GaAs—AlAs Superlattices, Phys. Rev. Lett. 54: 2111 (1985)
U. Gnutzmann and K. Clauseker, Theory of Optical Transitions in an Optical Indirect Semiconductor with a Superlattice Structure, Appl. Phys. 3: 9 (1974)
A. Maduhukar, Modulated Semiconductor Structures: An Overview of Some Basic Considerations for Growth and Desired Electronic Structure, J. Vac. Sci. Technol. 20: 149 (1982)
A. S. Barker, J. L. Merz, and A. C. Gossard, Study of Zone—Folfing effects on Phonons in Alternating monolayers of GaAs—AlAs, Phys. Rev. B17: 3181 (1978)
A. Ishibashi, Y. Mori, M. Itabashi, N. Watanabe, Optical Properties of (AIAs)m(GaAs)n Superlattices Grown by Metalorganic Chemical Vapor Deposition, J. Appl. Phys. 58: 2691 (1985)
A. Ishibashi, Y, Mori, F. Nakamura, and N. Watanabe, Optical ploperties of Quantum wells with ultrathin—layer Superlattices, J. Appl. Phys. 59: 2503 (1986)
A. Ishibashi, Y. Mori, K. Kaneko, N. Watanabe, A New Connection Rule of Wave Functions at a Heterointerface and Band Discontinuity between GaAs and AlGaAs, J. Appl. Phys. 59: 4087 (1986)
A. Ishibashi, M. Itabashi, Y. Mori, S. Kawado, K. Kaneko, and N. Watanabe, Raman Scattering from (AIAs)m(GaAs)n Ultrathin—layer Superlattices, Phys. Rev. B33: 2887 (1986)
A. Ishibashi, M. Itabashi, Y. Mori, N. Watanabe, Ratio of LO phonon Intensities in Raman Scattering from (AlAs)n(GaAs)n Superlattices, Optoelectronics, devices and Technologies, 1: 51 (1986)
A. Ishibashi, Y. Mori, M. Itabashi, N. Watanabe, A fundamentally New aspect of Electron—Phonon Interaction in (AlAs)m(GaAs)n Ultrathin—Layer Superlattices, 18th Int. Conf. Phys. Semicon. vol. 2: 1365 (1987)
A. Ishibashi, Y. Mori, M. Itabashi, N. Watanabe, Proc. Int. Workshop Future Electron Devices — Superlattice Devices: 105 (1987)
A. Ishibahsi, K. Funato, and Y. Mori, Ultrathin—Channelled GaAs MESFET with Double—Delta—Doped Layers, Electron. Lett. 24: 1034 (1988)
A. Ishibashi, K. Funato, and Y. Mori, Heterointerface Field Effect Transistor with 200 —A—Long Gate, Jpn. J. Appl. Phys. 27: L2382 (1988)
A. N. Broers, W. W. Molzen, J. J. Cuomo, and N. D. Wittels, Electron—Beam fabrication of 80—A Metal Structures, Appl. Phys. Lett. 29: 596 (1976)
S. Matsui and K. Mori, New Selective Deposition Technology by Electron Beam Induced Surface Reaction, J. Vac. Sci. Technol. B4: 299 (1985)
B. H. Chin and G. Ehrlich, Formation of Silicon Nitride Structure by Direct Electron Beam Writing, Appl. Phys. Lett. 38: 253 (1981)
Manasevit, Single Crystal Gallium Arsenide on Insulating Substrate, Appl. Phys. Lett. 12: 156 (1968)
H. Watanabe, and A. Usui, Atomic Layer Epitaxy, Proc. Int. Conf. GaAs and Related Compounds, Las Vegas: 1 (1986)
S. D. Hersee, M. Baldy, and P. Assena, The Growth of Quantum Well GaAs/AIGaAs Laser Structures, J. Phys, 43: C5–193 (1982)
R. Dingle, Confined Carrier Quantum State in Ultrathin Semiconductor Heterostructures, Festkoerperprobleme XV: 21 (1975)
P. M. Frijlink and J. Maluenda, MOVPE Growth of GaAlAs/GaAs Quantum Well Heterostructures, Jpn. J. Appl. Phys. 21: L574 (1982)
H. Kawai, K. Kaneko, and N. Watanabe, Photolumicescence of AIGaAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition, J. Appl. Phys. 56: 463 (1984)
N. Watanabe and Y. Mori, Ultrathin GaAs/GaAlAs Layers Grown by MOCVD and their Structural Characterization, Surf. Sci. 174: 10 (1986)
K. Zeeger, “Semiconductor Physics”, 3rd edit., Springer Verlag, Berlin (1985)
M. Ilgems and G. Pearson, Infrared reflection Spectra of GaAlAs Mixed Crystals, Phys. Rev. B1: 1576 (1970)
T. Toriyama, N. Kobayashi, and Y. Horikoshi, Lattice Vibration of Thin—layered AlAs—GaAs Superlattices, Jpn. J. Appl. Phys. 25: 1895 (1986)
C. Colvard, T. A. Gant, M. V. Klein, R. Merlin, P. Fischer, H. Morkoc, and A. C. Gossard, Folded Acoustic and Quantized Optical Phonons in (GaAl)As Superlattices, Phys. Rev. B31: 2080 (1985)
S. K. Yip and Y. C. Chang, Theory of Phonon Dispersion Relations in Semiconductor Superlattices, Phys. Rev. B30: 7037 (1984)
See for example, M. Cardona, in “Light scattering in Solids,” M. Cardona and G. Guntherodt, ed., Springer Verlag, Berlin, 1975
P. Manuel, G.A. Sai—Halasz, L.L. Chang, Chin—An Chang, and L. Esaki, Resonant Raman Scattering in a Semiconductor Superlattice, Phys. Rev. Lett. 37: 1701 (1976)
J. E. Zucker, A. Pinczuk, D. S. Chemla, A. C. Gossard, and W. Wiegmann, Raman Scattering Resonant with Quasi—Two—Dimensional Excitons in Semiconductor Quantum Wells, Phys. Rev. Lett. 35: 1293 (1983)
J. E. Zucker, A. Pinczuk, D. S. Chemla, A. C. Gossard, and W. Wiegmann, Delocalized Excitons in Semiconductor Heterostructures, Phys. Rev. 829: 7065 (1984)
M. Nakayama, K. Kubota, T. Tanaka, H. Kato, S. Chika, and N. Sano, Zone—Folding Effects on Phonons in GaAs—AlAs Superlattices, Jpn. J. Appl. Phys. 24: 1331 (1985)
R. M. Martin, in “Proc. 2nd Int. Conf. on Light Scatt. In Solids”, M. Balkanski, ed., Paris, 1971, p25
Y. Toyozawa, Theory of the Line—Shapes of the Exciton Absorption Band Prog. Theo. Phys. 20: 53 (1958)
H, Froehlich, Electrons in Lattice Fields, Adv. Phys. 3: 325 (1954)
G. L. Bir and G. E. Pikus, Theory of the Deformation Potential for Semiconductors with a Complex Band Structure, Sov. Phys. Solid State 2: 2039 (1961)
B. R. Nag, “ Electron Transport in Compound Semiconductors”, Springer Verlag, New York (1980)
M. Cardona, in “Light scattering in Solids II”, M. Cardona and G. Guentherodt, ed., Springer—Verlag, Berlin (1982)
W. Poetz and P. Vogl, Theory of Optical Phonon Deformation Potentials in Tetrahedral Semiconductors, Phys. Rev. B24: 2025 (1981)
C. Kittel, “Introduction to Solis state Physics”, Wiley, New York (1976)
J. N. Schulman and T. C. McGill, Complex Band Structure and Superlattice Electronic States, Phys. Rev.l B23: 4149 (1981)
J. N. Schulman and Y. C. Chang, New method for calculationg electronic properties using complex band structures, Phys. Rev. B24: 4445 (1981)
J. Sanchez—Dehesa and C. Tejedor, Selfconsistent calculation of properties of GaAs—AlAs superlattices with homopolar interfaces, Phys. Rev. B26: 5824 (1982)
R. C. Miller, D. A. Kleinman, W. A. Nordland, Jr., and, A. C. Gossard, Luminescence studies of optically pumped quantum wells in GaAs—AIGaAs multilayer structures, Phys. Rev. B22: 863 (1980)
R. Dingle, A. C. Cossard, and W. Wiegmann, Direct observation of superlattice formation in a semiconductor heterostructure, Phys. Rev. Lett, 34: 1327 (1975)
T. Ishibashi, S. Tarucha, and H. Okamoto, Exciton associated optical absorption spectra of AlAs/GaAs superlattices at 300 K, Inst. Phys. Conf. Ser. No. 63: 587 (1981)
D. A. B. Miller, D.S. Chemla, d. J. Eilenberger, and P. W. Smith, A. C. Gossard, and W. T. Tsang, Large room—temperature optical nonlinearity in GaAs/GaA1As multiple quantum well structures, Appl. Phys. Lett. 41: 679 (1982)
A. C. Gossard, P. M. Petroff, W. Wiegmann, R. Dingle, and A. Savage, Epitaxial structures with alternation—atomic—layer composition modulation, Appl. Phys. Lett. 29: 323 (1976)
J. P. van der Ziel and A. C. Gossard, Absorption, refractive index, and birefringence of AlAs—GaAs monolayers, J. Appl. Phys. 48: 3018 (1977)
J. N. Schulman and T. C. McGill, Electronic properties of the (001) interface and superlattice, Phys. Rev. B19: 6341 (1979)
W. Andreoni, and R. Car, Similarity of (Ga,A1,As) alloys and ultrathin heterostructures: Electronic properties from the empirical pseudopotential method, Phys. Rev. B21: 3334 (1980)
K. K. Mon, Electronic band structure of (001) GaAs—AlAs superlattices, Solid State Commun. 41: 699 (1982)
T. Nakayama and H. Kamimura, Band structure of semiconductor superlatices with ultrathin layers (GaAs)n/(AlAs)n with n=1,2,3, and 4, J. Phys. Soc. Jpn, 54: 4726 (1985)
H. Kamimura and T. Nakayama, Self—consistent band structure calculations of (GaAs)n(AIAS)n superlattices of ultrathin layers with n=1 to 10, Proc. 18th Int Conf. Phys. Semicon.: 643 (1986)
H. Kamimura and T. Nakayama, Electronic structures and properties of ultrathin layered semiconductor superlattices, Comments Cond. Mat. Phys. 13: 143 (1987)
M. A. Gell, D. Ninno, M. Jaros, and D. C. Herbert, Zone—folding, morphogenesis, and the role of periodicity in GaAs—AlGaAs (001) superlattices, Phys. Rev. B34: 2416 (1986)
M. A. Gell, M. Jaros, and D. C. Herbert, Band offsets and zone—folding in GaAs—AlAs (001) superlattices, Superlattice and Microstructures, 3: 121 (1987)
E. Yamaguchi, Theory of the DX centers in III—V Semiconductors and (001) Superlattices, J. Phys. Soc. Jpn. 56: 2853 (1987)
N. Hamada, S. Ohnishi, and A. Oshiyama, Energy bands and stable structures of ultrathin—layer semiconductor superlattices, Extended Abstracts 18th Conf. Solid State Devices and Materials,: 343 (1986)
N. Hamada, S. Ohnishi, Electronic structure calculations of (AlAs)m(GaAs)n superlattices based on full—potential linearized augmented—plane—wave method, Suerlattices and Microstructures, 3: 301 (1987)
M. Garriga, M. Cardona, N. E. Christensen, F. Lautenschlager, T. Isu, and K. Ploog, Interband transitions in thin—layer GaAs/AlAs superlattices, Phys. Rev. B36: 3254 (1987)
M. Tanaka, and H. Sakaki, Atomistic models of intergace structures of GaAs—A1GaAs (x=0.2–1) quantum wells grown by interrupted and uninterrupted MBE, J. Cryst. Growth. 81: 153 (1987)
H. C. Casey, Jr. and M. B. Panish, ‘Heterostructure Lasers’, Part A, Academic Press, New York (1978)
I. Ladny and H. Kressel, Visible CW (A1Ga)As heterojunction laser diode, Int. Elec. Dev. Meeting Technical Digest: 129 (1976)
M. Naganuma, Y. Suzuki, and H. Okamoto, Photoluminescence of GaSb—AISb superlattices grown by MBE, Inst. Phys. Conf. Ser. 63: 125 (1982)
G. Griffiths, K. Mohammed, S. Subbana, H. Kroemer, and J. L. Merz, GaSb/A1Sb multiquantum well structures: Molecular beam epitaxial growth and narrow—well photoluminescence, Appl. Phys. Lett. 43: 1059 (1983)
E. Finkman, M. D. Sturge, and M. C. Tamargo, X—point excitons in AlAs/GaAs superlattices, Appl. Phys. Lett. 49: 1299 (1986)
E. F. Schubert, A. Fisher, and K. Ploog, The delta—doped field effect transistor (oFET), IEEE Trans. Elec. Dev. ED-33: 625 (1986)
K. Ploog, M. Hauser, and A. Fisher, Fundamemtal studies and device application of o—doping in GaAs layers and in A1GaAs/GaAs heterostructures, Appl. Phys. A45: 233 (1988)
T. J. Drummond, H. Morkoc, K. Lee, and M. Shur, Model for modulation doped field effect transistor, IEEE Elec. Dev. Lett. EDL-3: 338 (1982)
M. B. Das, and M. L. Roszak, Design calculation for submicron gate—length AIGaAs/GaAs modulation—doped FET structures using carrier saturation velocity/charge—control model, Solid State Electron. 28: 997 (1985)
S. M. Sze, “Physics of Semiconductor Devices,” John Willey & Sons, New York (1981)
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Ishibashi, A. (1989). MOCVD-Grown Atomic Layer Superlattices. In: Fasol, G., Fasolino, A., Lugli, P. (eds) Spectroscopy of Semiconductor Microstructures. NATO ASI Series, vol 206. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6565-6_2
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DOI: https://doi.org/10.1007/978-1-4757-6565-6_2
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