Abstract
Calculations are presented of Hall mobility and geometrical magnetoresistance mobility for n-type InP compensated with Fe. From an analysis of electrical measurements and a spectrochemical analysis to determine the Fe content of InP slices we conclude that in some cases only a small percentage of the Fe contained is electrically active as an electron acceptor, suggesting redundancy of the incorporated Fe. Analysis of Fe concentration estimates based on the segregation coefficient seems to give a better measure of the electrical activity of Fe than the total concentration of Fe, although the value quoted by Henry and Swiggard does not seem universally applicable to all growth conditions.
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© 1980 B.T. Debney and P.R. Jay
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Debney, B.T., Jay, P.R. (1980). Electron Mobility Calculations for Fe-Doped InP. In: Rees, G.J. (eds) Semi-Insulating III–V Materials. Birkhäuser Boston. https://doi.org/10.1007/978-1-4684-9193-7_41
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DOI: https://doi.org/10.1007/978-1-4684-9193-7_41
Publisher Name: Birkhäuser Boston
Print ISBN: 978-1-4684-9195-1
Online ISBN: 978-1-4684-9193-7
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