Semi-Insulating III–V Materials

Nottingham 1980

  • G. J. Rees

Table of contents

  1. Front Matter
    Pages iii-xiii
  2. Invited papers

  3. Preparation and growth of semi-insulating GaAs and InP

    1. Front Matter
      Pages 57-57
    2. M. Bonnet, J. P. Duchemin, A. M. Huber, G. Morillot
      Pages 68-75
    3. R. N. Thomas, H. M. Hobgood, D. L. Barrett, G. W. Eldridge
      Pages 76-82
    4. F. Simondet, C. Venger, G. M. Martin, J. Chaumont
      Pages 100-107
    5. T. Udagawa, M. Higashiura, T. Nakanisi
      Pages 108-114
    6. Jiro Kasahara, Naozo Watanabe
      Pages 115-121
    7. I. J. Saunders, K. Steeples
      Pages 122-129
    8. A. Mircea-Roussel, G. Jacob, J. P. Hallais
      Pages 133-137
    9. C. A. Evans Jr, C. G. Hopkins, J. C. Norberg, V. R. Deline, R. J. Blattner, R. G. Wilson et al.
      Pages 138-141
  4. Investigations of semi-insulating materials

    1. Front Matter
      Pages 143-143

About this book


The study of deep levels in semiconductors has seen considerable growth in recent years. Many new techniques have become available for investigating both the electronic properties of deep levels and the chemical nature of the defects from which they arise. This increasing interest has been stimulated by the importance of the subject to device technology, in particular those microwave and opto-electronic devices made from GaAs, InP and their alloys. While previous conferences have covered specialist areas of deep level technology, the meeting described here was arranged to draw together workers from these separate fields of study. The following papers reflect the breadth of interests represented at the conference. For the sake of uniformity we have chosen the English alternative where an American expression has been used. We have also sought to improve grammar, sometimes without the approval of the author in the interests of rapid publication. The Editor wishes to thank the referees for their ready advice at all stages, Paul Jay who helped with many of the editorial duties and Muriel Howes and Lorraine Jones for rapid and accurate typing.


alloy defects electronic properties epitaxy growth material materials microwave nature semiconductor semiconductors technology

Editors and affiliations

  • G. J. Rees
    • 1
  1. 1.Plessey Research (Caswell) LtdUK

Bibliographic information

  • DOI
  • Copyright Information Birkhäuser Boston 1980
  • Publisher Name Birkhäuser Boston
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4684-9195-1
  • Online ISBN 978-1-4684-9193-7
  • About this book