Measurements of 3 1P Concentrations Produced by Neutron Transmutation Doping of Silicon
The absolute concentrations of 3 1P, produced by the irradiations of float zone silicon samples in the Texas A§M University Research Reactor, have been measured to an accuracy of ± 10%. The neutron fluence was varied from 1016 to 1018n/cm2, which corresponded to 3 1P concentrations in the 1012 to 1014 atoms/cm3 range. The results are based on measurements of the absolute activities of 3 1Si by detection of 1.266 MeV gamma rays. Secondary standards of Fe were required for the larger neutron fluences. The 3 lp concentrations were compared to the concentrations of electrically active P following 850°C anneals for 1 hour. These concentrations were determined in the same samples from temperature-dependent Hall effect measurements at Hughes Research Laboratories. The two results agree to within experimental error, thus confirming that transmuted P in the 1012 to 1014 atoms/cm3 range is completely electrically active following 850°C, 1 hour anneals of float zone silicon. In addition, a corrected value for the gamma abundance of31Si was established to be 5.6 x 10-4 ± 10%.
KeywordsHall Effect Neutron Fluence Hall Effect Measurement Float Zone Saturated Activity
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