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Measurements of 3 1P Concentrations Produced by Neutron Transmutation Doping of Silicon

  • R. R. Hart
  • L. D. Albert
  • N. G. Skinner
  • M. H. Young
  • R. Baron
  • O. J. Marsh

Abstract

The absolute concentrations of 3 1P, produced by the irradiations of float zone silicon samples in the Texas A§M University Research Reactor, have been measured to an accuracy of ± 10%. The neutron fluence was varied from 1016 to 1018n/cm2, which corresponded to 3 1P concentrations in the 1012 to 1014 atoms/cm3 range. The results are based on measurements of the absolute activities of 3 1Si by detection of 1.266 MeV gamma rays. Secondary standards of Fe were required for the larger neutron fluences. The 3 lp concentrations were compared to the concentrations of electrically active P following 850°C anneals for 1 hour. These concentrations were determined in the same samples from temperature-dependent Hall effect measurements at Hughes Research Laboratories. The two results agree to within experimental error, thus confirming that transmuted P in the 1012 to 1014 atoms/cm3 range is completely electrically active following 850°C, 1 hour anneals of float zone silicon. In addition, a corrected value for the gamma abundance of31Si was established to be 5.6 x 10-4 ± 10%.

Keywords

Hall Effect Neutron Fluence Hall Effect Measurement Float Zone Saturated Activity 
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Copyright information

© Plenum Press, New York 1979

Authors and Affiliations

  • R. R. Hart
    • 1
  • L. D. Albert
    • 1
  • N. G. Skinner
    • 1
  • M. H. Young
    • 2
  • R. Baron
    • 2
  • O. J. Marsh
    • 2
  1. 1.Texas A&M UniversityCollege StationUSA
  2. 2.Hughes Research LaboratoriesMalibuUSA

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