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Determination of the Neutron Flux and Energy Spectrum and Calculation of Primary Recoil and Damage-Energy Distributions for Materials Irradiated in the Low Temperature Fast-Neutron Facility in CP-5

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Neutron Transmutation Doping in Semiconductors

Abstract

We have determined the absolute differential neutron-energy spectrum for the low temperature fast-neutron irradiation facility in the CP-5 reactor by means of a 20-foil activation technique. This technique employs the most recent version of the SAND-II computer code, which iteratively unfolds the neutron spectrum by fitting the foil activities. A Monte Carlo routine was also employed to calculate standard-deviation errors in each neutron-energy group. Using this differential neutron spectrum we have calculated for numerous elements, total recoil cross sections, detailed primary recoil group distributions, total damage-energy cross sections, damage-energy distributions, and an error analysis based on the uncertainties in the neutron spectrum. The significance of this information with respect to the interpretations of various neutron radiation damage experiments is discussed. A general observation about neutron radiation damage in silicon is also suggested.

Work supported by the U. S. Department of Energy.

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© 1979 Plenum Press, New York

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Kirk, M.A., Greenwood, L.R. (1979). Determination of the Neutron Flux and Energy Spectrum and Calculation of Primary Recoil and Damage-Energy Distributions for Materials Irradiated in the Low Temperature Fast-Neutron Facility in CP-5. In: Meese, J.M. (eds) Neutron Transmutation Doping in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-8249-2_11

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  • DOI: https://doi.org/10.1007/978-1-4684-8249-2_11

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-8251-5

  • Online ISBN: 978-1-4684-8249-2

  • eBook Packages: Springer Book Archive

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