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II-VI Heterostructures and Multi-Quantum Wells

  • T. C. McGill
  • R. H. Miles
  • Y. Rajakarunanayake
  • J. O. McCaldin
Part of the NATO ASI Series book series (NSSB, volume 200)

Abstract

The ability to fabricate epitaxial layers of II–VI semiconductors has made it possible to circumvent the doping difficulties of II–VI semiconductors and to fabricate visible light emitters. Heteroep it axial structures are one of the promising approaches. The more interesting cases involve heavy strain and require particular values of the band offsets. We review recent work on CdTe/ZnTe and ZnSe/ZnTe multiquantum well structures.

Keywords

Valence Band Molecular Beam Epitaxy Misfit Dislocation Conduction Band Edge Valence Band Edge 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • T. C. McGill
    • 1
  • R. H. Miles
    • 1
  • Y. Rajakarunanayake
    • 1
  • J. O. McCaldin
    • 1
  1. 1.T. J. Watson, Sr., Laboratory of Applied PhysicsCalifornia Institute of TechnologyPasadenaUSA

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