Abstract
The ability to fabricate epitaxial layers of II–VI semiconductors has made it possible to circumvent the doping difficulties of II–VI semiconductors and to fabricate visible light emitters. Heteroep it axial structures are one of the promising approaches. The more interesting cases involve heavy strain and require particular values of the band offsets. We review recent work on CdTe/ZnTe and ZnSe/ZnTe multiquantum well structures.
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© 1989 Plenum Press, New York
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McGill, T.C., Miles, R.H., Rajakarunanayake, Y., McCaldin, J.O. (1989). II-VI Heterostructures and Multi-Quantum Wells. In: McGill, T.C., Sotomayor Torres, C.M., Gebhardt, W. (eds) Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors. NATO ASI Series, vol 200. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5661-5_6
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