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Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors

  • T. C. McGill
  • C. M. Sotomayor Torres
  • W. Gebhardt

Part of the NATO ASI Series book series (NSSB, volume 200)

Table of contents

  1. Front Matter
    Pages i-xi
  2. Prospects and Considerations for Wide Gap II-VI Devices

  3. 3D Growth of Wide-Gap II-VI Semiconductors

  4. Excitons, Doping and Impurities in Wide Gap II-VI Semiconductors

  5. Non-Linear Optical Properties of Wide Gap II-VI Semiconductors

    1. C. Klingshirn, M. Kunz, F. A. Majumder, D. Oberhauser, R. Renner, M. Rinker et al.
      Pages 167-181
    2. I. M. Catalano, A. Cingolani, M. Lepore
      Pages 193-198
  6. 2D Growth of II-VI Semiconductors

    1. T. Yao, M. Fujimoto, K. Uesugi, S. Kamiyama
      Pages 209-218
    2. Makoto Konagai, Shiro Dosho, Yasushi Takemura, Nobuaki Teraguchi, Ryuhei Kimura, Kiyoshi Takahashi
      Pages 219-228
    3. R. L. Gunshor, L. A. Kolodziejski, M. R. Melloch, N. Otsuka, A. V. Nurmikko
      Pages 229-238
    4. M. C. Tamargo, J. L. de Miguel, F. S. Turco, B. J. Skromme, D. M. Hwang, R. E. Nahory et al.
      Pages 239-243
    5. Hugo J. Cornelissen, D. A. Cammack, R. J. Dalby
      Pages 257-261
    6. R. N. Bicknell-Tassius, N. C. Giles, J. F. Schetzina
      Pages 263-268
  7. Optical Properties and Advanced Characterisation of 2D and 3D II-VI Semiconductors

    1. L. A. Kolodziejski, R. L. Gunshor, A. V. Nurmikko, N. Otsuka
      Pages 269-279
    2. L. Vina, L. L. Chang, M. Hong, J. Yoshino, F. Calle, J. M. Calleja et al.
      Pages 293-300
  8. Other Wide-Gap Material

  9. Back Matter
    Pages 343-349

About this book

Introduction

This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.

Keywords

defects epitaxy material optical properties optoelectronics quantum wells semiconductor superlattice thin films

Editors and affiliations

  • T. C. McGill
    • 1
  • C. M. Sotomayor Torres
    • 2
  • W. Gebhardt
    • 3
  1. 1.California Institute of TechnologyPasadenaUSA
  2. 2.University of GlasgowGlasgowUK
  3. 3.University of RegensburgRegensburgFederal Republic of Germany

Bibliographic information

  • DOI https://doi.org/10.1007/978-1-4684-5661-5
  • Copyright Information Springer-Verlag US 1989
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4684-5663-9
  • Online ISBN 978-1-4684-5661-5
  • Series Print ISSN 0258-1221
  • Buy this book on publisher's site