Abstract
The purpose of the present article is to demonstrate that acousto-electric methods may be used to characterize piezoelectric semiconductors in the case of bipolar photoconduction. The wide gap II–VI semiconductor CdTe is used as an example for this characterization method.
Based upon the Habilitation Thesis, University of Karlsruhe (1987).
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© 1989 Plenum Press, New York
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Rosenzweig, J. (1989). Acoustoelectric Characterization of Wide Gap II-VI Semiconductors in the Case of Bipolar Photoconduction. In: McGill, T.C., Sotomayor Torres, C.M., Gebhardt, W. (eds) Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors. NATO ASI Series, vol 200. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5661-5_32
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DOI: https://doi.org/10.1007/978-1-4684-5661-5_32
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