Abstract
The first ODMR experiments on II–VI compounds were reported in 19751,2 and since that time the technique has been used with considerable success to investigate recombination processes in these and other semiconductors, especially those with the wider bandgaps. Because of the much greater spectral resolution that ODMR provides compared with standard optical spectroscopy, extremely detailed identification of recombination centres is possible, and in this respect studies of II–VI compounds have been particularly successful. Reviews of the early investigations on these materials were given by Cox3 and by Cavenett4 and accounts of work up to 19855 and up to 19876 have been given by the present author. The purpose of the present article is to summarize the type of information that ODMR provides in the context of II–VI materials, to outline both the advantages and the limitations of the technique and finally to discuss the possibilities of extending the investigations to multiple quantum well (MQW) and superlattice structures.
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J.R. James, J.E. Nicholls, B.C. Cavenett, J.J. Davies and D.J. Dunstan, Solid State Canmun., 17:969 (1975).
J.E. Nicholls, J.J. Davies, B.C. Cavenett, J.R. James and D.J. Dunstan, J. Phys. С (Solid State Phys.) 12:361 (1979)
R.T. Cox, Rev. Physique Appl. 15:653 (1980).
B.C. Cavenett, Advan. Phys. 30:475 (1981).
J.J. Davies, J. Crystal Growth 72:317 (1985).
J.J. Davies, J. Crystal Growth 86:599 (1988).
D. Verity, J.J. Davies, J.E. Nicholls and F.J. Bryant, J. Appl. Phys. 52:737 (1981).
K.M. Lee, Rev. Sci. Instr. 53:702 (1982).
D.J. Dunstan and J.J. Davies, J. Phys.С (Solid State Phys.) 12:2927 (1979).
J.J. Davies, J. Phys.С (Solid State Phys.) 11:1907 (1978).
D. Block and R.T. Cox, J. Luminescence 24/25:167 (1981).
D. Block, A. Hervé and R.T. Cox, Phys. Rev.B 25:6049 (1982).
J.L. Patel, J.E. Nicholls and J.J. Davies, J. Phys.С (Solid State Phys.) 14:1339 (1981).
J.L. Patel, J.E. Nicholls and J.J. Davies, J. Phys.С (Solid State Phys.) 14:5545 (1981).
R.T. Cox and J.J. Davies, Phys. Rev.B. 34:8591 (1986).
F. Rong, W.A. Batty, J.F. Donegan and G.D. Watkins, Phys. Rev.В 37:4329 (1988).
J.J. Davies and J.E. Nicholls, J. Phys.С (Solid State Phys.) 15:5321 (1982).
F. Rong and G.D. Watkins, Phys. Rev. Letters 56:2310 (1986).
С.Р. Hilton, J.E. Nicholls, J.J. Davies and O. Goede, to be published.
D. Verity, J.E. Nicholls, J.J. Davies and F.J. Bryant, J. Phys.С (Solid State Phys.) 13:L87 (1980).
D. Verity, J.J. Davies and J.E. Nicholls, J. Phys.С (Solid State Phys.) 14:485 (1981).
J.L. Patel, J.J. Davies, J.E. Nicholls and B. Lunn, J. Phys.С (Solid State Phys.) 14:4717 (1981).
K.P. O’Donnell, K.M. Lee and G.D. Watkins, J. Phys. С (Solid State Phys.) 16:L723 (1983).
J.J. Davies, J. Phys.С (Solid State Phys.) 16:L867 (1983).
M. Godlewski, W.M. Chen and B. Monemar, Phys. Rev.B 37:2570 (1988).
H.W. van Kesteren, E.C. Kosman, F.J.A.M. Greidanus, P. Dawson, K.J. Moore and C.T. Foxon, Phys. Rev. B, in press (1988).
B.C. Cavenett, G.R. Johnson, A. Kana’ah, M.S. Skolnick and S.J. Bass, Superlattices and Microstructures 2:323 (1986).
G.R. Johnson, A. Kana’ah, B.C. Cavenett, M.S. Skolnick and S.J. Bass, Semicond. Sci. Technol. 2:182 (1987).
G. Lancaster, “Electron Spin Resonance in Semiconductors”, Hilger and Watts, London, p.49 (1966).
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© 1989 Plenum Press, New York
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Davies, J.J. (1989). Optically-Detected Magnetic Resonance of II-VI Compounds. In: McGill, T.C., Sotomayor Torres, C.M., Gebhardt, W. (eds) Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors. NATO ASI Series, vol 200. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5661-5_31
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DOI: https://doi.org/10.1007/978-1-4684-5661-5_31
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