Considerations for Blue-Green Optoelectronics Based on Epitaxial ZnSe/ZnS

  • K. P. O’Donnell
  • B. Henderson
Part of the NATO ASI Series book series (NSSB, volume 200)


The blue-emitting junction laser diode is the Holy Grail of the wide bandgap II–VI community. Such a device would permit a range of improvements in the current applications of laser diodes to the recording and reproduction of data. In this paper, we discuss the prospects for realising a “blue shift” in technology, away from III–V and towards II–VI materials. Recent rapid advances1 in the chemical and structural control of II–VI compounds, superlattices and ordered alloys encourage us to assess these prospects. Characterisation of new material rests very firmly on a literature which goes back over twenty years.2 Of particular relevance to light emitting devices is the very thorough optical spectroscopic studies pioneered in the ’60s and ’70s by the late Paul Dean and his co-workers. It is a great pity that Paul Dean did not live to see this work bear fruit.


Band Offset Atomic Layer Epitaxy Film ZnSe Beam Pump Valence Band Offset 
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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • K. P. O’Donnell
    • 1
  • B. Henderson
    • 1
  1. 1.Department of Physics and Applied PhysicsUniversity of StrathclydeGlasgowScotland, UK

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