Growth of II-VI Semimagnetic Semiconductors by Molecular Beam Epitaxy

Abstract

Two dimensional semiconductor systems in the form of quantum well structures and superlattices have attracted considerable attention over the past several years because of the many interesting properties that such layered multilayers exhibit. One of the reasons for the current interest in layered structures is that many of the optical and electronic properties can be tailored through the choice of materials and layer thickness. These structures are prepared by either molecular beam epitaxy or organometallic chemical vapor deposition and are usually composed of lattice-matched III–V compounds such as GaAs-AlAs and GaAs-GaAlAs.