Advertisement

Optically Induced Effects in Photoluminescence Studies of Chalcogenide Glasses

  • S. G. Bishop
  • U. Strom
Part of the Optical Physics and Engineering book series (OPEG)

Abstract

Enhancement of photoluminescence (PL) by IR light with energy as low as half the band gap is demonstrated to be a restoration of the fatigued PL induced by inter-band excitation radiation. At 6K in glassy As2Se3, an increase in the absorption coefficient in the band tail region which accompanies fatiguing of the PL is observed throughout the spectral range of the enhancement band (≅0.6 – 1.5 eV). Subsequent irradiation by IR light in the 0.6 – 1.5 eV range restores both the IR transmission in this range and the PL to their initial cold-dark values.

Keywords

Chalcogenide Glass Exciting Radiation Exciting Light Near Infrared Radiation Localize Electronic State 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    B. T. Kolomiets, B. T. Mamontova, and A. A. Babaev, J. NonCryst. Solids 4, 289 (1970).ADSCrossRefGoogle Scholar
  2. 2.
    R. Fischer, U. Heim, F. Stern, and K. Weiser, Phys. Rev. Lett. 26, 1182 (1971).ADSCrossRefGoogle Scholar
  3. 3.
    R. A. Street, T. M. Searle, and I. G. Austin, J. Phys. C6, 1830 (1973).ADSGoogle Scholar
  4. 4.
    S. G. Bishop and C. S. Guenzer, Phys. Rev. Lett. 30, 1309 (1973).ADSCrossRefGoogle Scholar
  5. 5.
    J. Cernogora, F. Mollot, and C. Benoit a la Guillaume, Phys. Stat. Sol. (a) 15, 401 (1973).ADSCrossRefGoogle Scholar
  6. 6.
    S. G. Bishop and D. L. Mitchell, Phys. Rev. B8, 5696 (1973).ADSCrossRefGoogle Scholar
  7. 7.
    R. A. Street, T. M. Searle, and I. G. Austin, Phil. Mag. 29, 1157 (1974).ADSCrossRefGoogle Scholar
  8. 8.
    E. A. Davis and N. F. Mott, Phil. Mag. 22, 903 (1970).ADSCrossRefGoogle Scholar
  9. 9.
    S. G. Bishop, U. Strom, and C. S. Guenzer, Proc. 5th Intl. Conf. on Amorphous and Liquid Semiconductors, ed. J. Stuke and W. Brenig, ( Taylor and Francis, London, 1974 ), p. 963.Google Scholar
  10. 10.
    F. Mollot, J. Cernogora, and C. Benoit a la Guillaume, Phys. Stat. Sol. (a) 21, 281 (1974).ADSCrossRefGoogle Scholar
  11. 11.
    J. Cernogora, F. Mollot, and C. Benoit a la Guillaume, Proc. 12th Intl. Conf. on Physics of Semiconductors, ed. M. H. Pilkuhn ( B. G. Teubner, Stuttgart, 1974 ), p. 1027.Google Scholar
  12. 12.
    S. G. Bishop and U. Strom, to be published.Google Scholar
  13. 13.
    J. S. Berkes, S. W. Ing, Jr., and W. J. Hillegas, J. Appl. Phys. 42, 4908 (1971).ADSCrossRefGoogle Scholar
  14. 14.
    A. Hamada, M. Saito, and M. Kikuchi, Solid State Comm. 11, 1409 (1972).ADSCrossRefGoogle Scholar
  15. 15.
    Y. Asahara and T. Izumitani, J. Non-Cryst. Solids 16, 407 (1974).ADSCrossRefGoogle Scholar
  16. 16.
    D. L. Wood and J. Tauc, Phys. Rev. B5, 3144 (1972).ADSCrossRefGoogle Scholar
  17. 17.
    E. A. Fagen and H. Fritzsche, J. Non-Cryst. Solids 4, 480 (1970).ADSCrossRefGoogle Scholar
  18. 18.
    F. Stern, Solid State Physics, Vol. 15, ed. F. Seitz and D. Turnbull (Academic Press, New York, 1963 ), p. 378.Google Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • S. G. Bishop
    • 1
  • U. Strom
    • 1
  1. 1.Naval Research LaboratoryUSA

Personalised recommendations